NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror Good thermal coupling and VBE matching High current gain Low emitter-saturation voltage Type Marking Ordering Code (tape and reel) BCV 61 A BCV 61 B BCV 61 C 1Js 1Ks 1Ls Q62702-C2155 Q62702-C2156 Q62702-C2157 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage (transistor T1) VCE0 30 V Collector-base voltage (open emitter) (transistor T1) VCB0 30 Emitter-base voltage VEBS 6 Collector current IC 100 Collector peak current ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS 99 C2) Ptot 300 mW Junction temperature Tj 150 C Storage temperature range Tstg - 65 ... + 150 Junction - ambient2) Rth JA 240 Junction - soldering point Rth JS 170 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 61 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CE0 30 - - Collector-base breakdown voltage IC = 10 A, IB = 0 V(BR)CB0 30 - - Emitter-base breakdown voltage IE = 10 A, IC = 0 V(BR)EBS 6 - - Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C ICB0 - - - - 15 5 DC current gain1) IC = 0.1 mA, VCE = 5 V IC = 2 mA, VCE = 5 V hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IC = 0.5 mA IC = 100 mA, IC = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 nA A - 100 110 200 420 BCV 61 A BCV 61 B BCV 61 C V - 180 290 520 220 450 800 mV - - 90 200 250 600 - - 700 900 - - 580 - 660 - 700 770 BCV 61 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 0.4 - - - - 1.8 DC characteristics for transistor T2 Base-emitter forward voltage IE = 10 A IE = 250 mA V VBES Matching of transistor T1 and transistor T2 at IE2 = 0.5 mA and VCE1 = 5 V TA = 25 C TA = 150 C - IC1 / IC2 IC1 / IC2 0.7 0.7 - - 1.3 1.3 IE2 - 5 - mA Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 250 - MHz Collector-base capacitance VCB = 10 V, IC = iC = 0, f = 1 MHz Ccb - 3 - pF Input capacitance VEB = 0.5 V, IC = iC = 0, f = 1 MHz Cibo - 8 - Noise figure IC = 200 A, VCE = 5 V, RS = 2 k f = 1 kHz, B = 200 Hz F - 2 - dB Input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz h11e - 4.5 - k Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h12e - 2 - 10- 4 Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h21e 100 - 900 - Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz h22e - 30 - S Thermal coupling of transistor T1 and T1: VCE = 5 V transistor T21) Maximum current for thermal stability of IC1 AC characteristics for transistor T1 1) Without emitter resistor. Device mounted on alumina 15 mm x 16.5 mm x 0.7 mm. Semiconductor Group 3 BCV 61 Test circuit for current matching Note: Voltage drop at contacts: VCO < 2 VT = 16 mV 3 Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1 / IE2 = 1.3 Note: BCV 61 with emitter resistors Semiconductor Group 4 BCV 61 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Semiconductor Group Permissible pulse load Ptot max/Ptot DC = f (tp) 5