DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C * Suitable for short and medium pulse applications PIN * Internal input and output matching networks for an easy circuit design * Emitter ballasting resistors improve ruggedness * Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange * Interdigitated emitter-base structure provides high emitter efficiency * Multicell geometry improves power sharing and reduces thermal resistance. 1 handbook, halfpage APPLICATIONS * Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range. 3 2 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange. MBK132 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) VCB (V) PL (W) Gp (dB) C (%) 3.1 to 3.5 40 10 typ. 9 typ. 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 01 2 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 75 V VCES collector-emitter voltage RBE = 0 - 75 V VEBO emitter-base voltage open collector - 2 V ICM peak collector current tp 100 s; 10% - 1.5 A Ptot total power dissipation tp = 100 s; = 10%; Th = 25 C - 34 W Tstg storage temperature -65 +200 C Tj operating junction temperature - 200 C Tsld soldering temperature - 235 C up to 0.2 mm from ceramic cap; t 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS VALUE UNIT thermal impedance from junction to heatsink tp = 100 s; = 10%; note 1 5.2 K/W tp = 200 s; = 10%; note 1 5.8 K/W tp = 300 s; = 10%; note 1 6.3 K/W MAX. UNIT Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. 75 - V collector-emitter breakdown voltage IC = 2.5 mA; VBE = 0 75 - V V(BR)CBO collector-base breakdown voltage V(BR)CES IC = 2.5 mA; open emitter ICBO collector leakage current VCB = 40 V; IE = 0 - 0.3 mA ICES collector leakage current VCE = 40 V; VBE = 0 - 0.5 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 - 0.1 mA hFE DC current gain VCE = 5 V; IC = 0.25 A 40 - APPLICATION INFORMATION RF performance at Th = 25 C in a common-base test circuit. MODE OF OPERATION Class-C; tp = 100 s; = 10% 2000 Feb 01 f (GHz) VCE (V) PL (W) Gp (dB) C (%) 3.1 to 3.5 40 10 7.5 typ. 9 35 typ. 40 3 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 MCD856 12 MCD857 12 handbook, halfpage handbook, halfpage (1) PL (1) (2) Gp (dB) (3) (W) 8 8 4 4 0 (2) (3) 0 0.5 0 1 PD (W) 1.5 0 VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.2 4 8 PL (W) 12 VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Load power as a function of drive power; typical values. Fig.3 Power gain as a function of load power; typical values. MCD858 50 MCD859 12 handbook, halfpage handbook, halfpage C (%) 40 Gp Gp (2) 24 return losses (dB) (dB) (1) (3) 8 16 return losses 30 20 8 4 10 0 0 0 4 8 PL (W) 12 3 VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 3.1 GHz. (2) f = 3.3 GHz. (3) f = 3.5 GHz. Fig.4 3.4 f (GHz) 0 3.6 VCB = 40 V; class-C; PL = 10 W; tp = 100 s; = 10%. Collector efficiency as a function of load power; typical values. 2000 Feb 01 3.2 Fig.5 4 Power gain and input return losses as functions of frequency; typical values. Philips Semiconductors Product specification Microwave power transistor BLS3135-10 MCD860 8 MCD861 12 handbook, halfpage handbook, halfpage Zi () RL ZL () ri 4 XL 8 0 -8 4 xi -4 0 3 3.2 3.4 f (GHz) 3.6 3 3.2 VCB = 40 V; class-C; PL = 10 W. VCB = 40 V; class-C; PL = 10 W. Fig.6 Fig.7 Input impedance as a function of frequency (series components); typical values. 2000 Feb 01 5 3.4 f (GHz) 3.6 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification Microwave power transistor handbook, full pagewidth BLS3135-10 30 30 40 C2 C1 MCD862 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (r = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A). Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit. 2000 Feb 01 6 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT445C D A F 3 D1 D2 U1 B q c C 1 H U2 E2 E1 w1 M A B p A E 2 w2 M C b 0 Q 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b c D D1 D2 E E1 E2 F H p Q q U1 U2 w1 w2 mm 5.57 4.70 3.15 2.95 0.15 0.09 8.13 7.87 7.65 7.35 8.15 7.85 4.20 3.93 4.25 3.95 5.31 5.01 1.82 1.22 15.84 14.64 3.35 3.05 3.33 3.03 14.22 20.47 20.17 5.18 4.98 0.51 1.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT445C 2000 Feb 01 EUROPEAN PROJECTION ISSUE DATE 97-05-23 7 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 01 8 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 NOTES 2000 Feb 01 9 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 NOTES 2000 Feb 01 10 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 NOTES 2000 Feb 01 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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