© 2009 IXYS All rights reserved 1 - 3
Advanced Technical Information VVZB 170
20091110b
Symbol Conditions Maximum Ratings
VRRM 1600 V
IdAVM TC = 85°C; sinusoidal 120° 170 A
IFSM TVJ = 45°C; t = 10 ms; VR = 0 V 900 A
TVJ = 150°C; t = 10 ms; VR = 0 V 780 A
I2tTVJ = 45°C; t = 10 ms; VR = 0 V 4050 A
TVJ = 150°C; t = 10 ms; VR = 0 V 3040 A
Ptot TC = 25°C per diode 250 W
(di/dt)cr TVJ = TVJM ; repetitive; IT = 150 A 150 A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3 VDRM;
IG = 0.45 A; non repetitive; IT = Id(AV)/3 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM; 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM;t
P = 30 µs 10 W
IT = Id(AV)/3; tP = 300 µs 5 W
PGAVM 0.5 W
VCES TVJ = 25°C to 150°C 1200 V
VGE Continuous ± 20 V
IC25 TC = 25°C; DC 141 A
IC80 TC = 80°C; DC 100 A
ICM tp = Pulse width limited by TVJM 150 A
Ptot TC = 25°C 570 W
VRRM 1200 V
IFAV TC = 80°C; rectangular d = 0.5 27 A
IFRMS TC = 80°C; rectangular d = 0.5 38 A
IFRM TC = 80°C; tP = 10 µs; f = 5 kHz tbd A
IFSM TVJ = 45°C; t = 10 ms 200 A
Ptot TC = 25°C 130 W
VRRM Type
V
1600 VVZB 170-16 NO1
IGBT
Fast Recovery Diode Rectifier Bridge
Features
• Soldering connections for PCB mounting
• Convenient package outline
• Thermistor
Applications
• Drive Inverters with brake system
Advantages
• 2 functions in one package
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
VRRM = 1600 V
IdAVM = 170 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
6+7
4+5
2+3
19
+
20
1213
10
+
11
1
21+22188+9
NTC
16 15 14
17
See outline drawing for pin arrangement
E72873
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© 2009 IXYS All rights reserved 2 - 3
Advanced Technical Information VVZB 170
20091110b
IR, IDVR = VRRM; TVJ = 25°C 0.1 mA
VR = VRRM; TVJ = 150°C 20 mA
VF, VTIF = 150 A; TVJ = 25°C 1.68 V
VT0 for power-loss calculations only 0.85 V
rTTVJ = 150°C 5.9 mΩ
VGT VD= 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
IGT VD= 6 V; TVJ = 25°C 95 mA
TVJ = -40°C 200 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM 10 mA
ILVD = 6 V; tG = 10 µs; 450 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IHTVJ = TVJM; VD = 6 V; RGK = ∞200 mA
tgd VD = ½ VDRM;2µs
diG/dt = 0.45 A/µs; IG = 0.45 A
tqTVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; 150 µs
tP = 200 µs; dv/dt = 20 V/µs;
IT = 120 A; -di/dt = 10 A/µs
RthJC per rectifier 0.5 K/W
RthCH 0.1 K/W
VBR(CES) VGS = 0 V; IC = 0.1 mA 1200 V
VGE(th) IC = 3 mA 4.5 6.45 V
ICES VCE = 1200 V; TVJ = 25°C 0.1 mA
VCE = 0,8•VCES;T
VJ = 125°C 0.5 mA
VCEsat VGE = 15 V; IC = 150 A 3.7 V
tSC (SCSOA) VGE = 15 V; VCE = 900 V; TVJ = 125°C 10 µs
RBSOA VGE = 15 V; VCE = 1200 V; TVJ = 125°C; 150 A
clamped inductive load; L = 100 µH;
RG = 15 Ω
Cies VCE = 25 V; f = 1 MHz; VGE = 0 V 5.7 nF
td(on) 150 ns
td(off) 680 ns
Eon 9mJ
Eoff 7.5 mJ
RthJC 0.22 K/W
RthJH 0.4 K/W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Rectifier Diodes
VCE = 720 V; IC = 75 A;
VGE = 15 V; RG = 15 Ω;
Inductive load; L = 100 µH;
TVJ = 125°C
IGBT Rectifier Bridge
0.001 0.01 0.1 1 10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Z
thJC
[K/W]
t[s]
Ri τi
1 0.02308 0.0004
2 0.06385 0.007
3 0.2777 0.092
4 0.1354 0.44
Fig. 1 Transient thermal impedance junction to case (per thyristor/diode)
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© 2009 IXYS All rights reserved 3 - 3
Advanced Technical Information VVZB 170
20091110b
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IRVR = VRRM, TVJ = 25°C 0.25 mA
VR = 1200 V, TVJ = 125°C 1 mA
VFIF = 30 A, TVJ = 25°C 2.76 V
VT0 For power-loss calculations only 1.3 V
rTTVJ = 150°C 16 mΩ
IRM IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V 5.5 11 A
trr IF = 1 A, -diF/dt = 200 A/µs, VR = 30 V 40 ns
RthJC 0.9 K/W
RthCH 0.1 K/W
R25 4.75 5.0 5.25 kΩ
B25/50 3375 K
Symbol Conditions Maximum Ratings
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, t = 1 min 2500 V~
IISOL ≤ 1 mA, t = 1 s 3000 V~
MdMounting torque 2.7...3.3 Nm
dSCreep distance on surface 12.7 mm
dAStrike distance in air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Weight typ. 180 g
Fast Recovery Diode
NTC
Module
Dimensions in mm (1 mm = 0.0394")
R(T) = R25 • eB25/100
11
T 298K
()
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