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TM
IF/RF MICROWAVE COMPONENTS
50Ω High Power 0.50 to 1000 MHz
RF Instrument Amplifier
Coaxial
TIA-1000-1R8
CASE STYLE: AP175
Outline Dimensions ( )
inch
mm
Maximum Ratings
Features
Operating Temperature 0°C to 55°C
Storage Temperature -40°C to 70°C
Outline Drawing
RF Instrument Amplifier Electrical Specifications
REV. OR
M98211
TIA-1000-1R8
071226
Page 1 of 2
• instrument model with built-in power supply, 110V/220V operation
• high power output at 3.5dB compression, 37dBm typ.
• high gain, 38 dB typ.
• high reverse isolation, 80 dB typ.
• 100% burn-in at +25°C, 48 hrs
• thermally self-protected, LED indicator
• protected by US Patent 5,101,171 and 6,943,629
MODEL
NO.
FREQUENCY
(MHz)
GAIN
(dB)
MAXIMUM
POWER
(dBm)
DYNAMIC
RANGE
VSWR
(:1)
AC
POWER
fLfUMin.
Flatness
Max.
Output
(1 dB Compr.) Input
(no damage)
NF
(dB)
Typ.
IP3
(dBm)
Typ. In Out
Volt
(V)
Freq.
Hz
VA
Max.Typ. Min.
TIA-1000-1R8 0.50 1000 35 ±2.0 +35 +32 +7 8* +45 1.9 2.5 110 50/60 140
Applications
• testing
• laboratory use
* Noise Figure above 400MHz, At low frequency, NF increases to 16 dB typ.
1. Gain and maximum output power specied at 25°C±5°C, over temperature, specications degrade approximately 1dB, gain atness ± 2.5 dB maximum.
2. VSWR specied at 340-1000 MHz
3. Open load is not recommended, potentially can cause damage. With no load derate max input power by 20 dB
Connectors Model Price Qty.
BNC TIA-1000-1R8 $1,495.00 ea. (1-9)
Add-2 to model for 220V operation
Keep area adjacent to fan and louvers clear to permit air ow to pass.
Caution: Do not insert anything especially conductors or ngers into case
opening. Physical injury, shock or death may accur.
Permanent damage may occur if any of these limits are exceeded.