BUW64A, BUW64B, BUW64C File Number 1199 WA 7-35-19 RRIS SEMICOND SECTOR SbE D MM 4302271 0040719 443 MBHAS High-Current, Silicon N-P-N TERMINAL DESIGNATIONS VERSAWATT Transistors [ c Switching Applications (FLANGE) | CO i . Features: - Fast switching speed at temperatures up to 125C c 8 = Low Vce(sat) TOP VIEW a VERSAWATT plastic package JEDEC TO-220AB RCA-BUW64A, BUW64B, and BUW64C are epitaxial-base silicon n-p-n power transistors which feature fast switching speeds, low saturation voltages, and high safe-operating- area (SOA) ratings. They are specially designed for converters, inverters, pulse-width-modulated regulators and a variety of power switching circuits. The BUW64A, BUW64B, and BUW64C transistors are supplied in the JEDEC TO-220AB8 (RCA VERSAWATT) t.- plastic packages. POWER TRANSISTORS MAXIMUM RATINGS, Absoiute-Maximum Values: BUW64A BUW64B suwe4c Voav Vee = n<1.BV cece cece cere cece eet e erence teense esee eee eee eens 140 160 180 v CEO ccc cc ener etc ee teers eee n ee nea be sees ees ee eee t ese eaeeeetes 90 110 130 v 7 Vv 5 5 4 A 7 A 10 A 5 A To UP 0 25C coerce ere e nc cen cet ec ene rene nseenenescseeeenaes 50 Ww Te AD0VO 25O cocci cscs cree cree cece ener enecane Derate Linearly 0.4 wc Togs Thee ccc cc cece tcc sete eran erence nr een re ences nesta sees tes eees ~65 to 150 C ar At distance > 1/8 in. (3.16 mm) from seating plane for 10 8 max. ... 235 C 2-297S5bE D MM 4302271 OO40720 165 BBHAS BUWG64A, BUW64B, BUW64C ELECTRICAL CHARACTERISTICS, at Case Temperature Tc = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS 1-35-19 CHARAC- VOLTAGE| CURRENT TERISTIC V de Adc BUWG64A | BUWG4B | BUWGAC [nits Vce| Vee | 'c Ig | Min.| Max.|Min.| Max.| Min. |Max. 140 |-1.5 ~jtoof| -]}-]- Icey 160 | -1.5 -|-]-| 100; - | - | wa 180 | -1.5 -|-]-]|- | - | 100 140 | -1.5 ~ -f| ]-]- Te = 128C 160 |-1.5 -j-]- ne 180 | --1.5 -j-fJ-}t-][- a] mA lEBO ~7| 0 | 100] | 100] | 100} pa Vego(susib 0.012 | o | 90] Jato} | 130] - v 2 0.28 30 | | 30] | 30] - hee 2 4a ~{-]-]- |] 20} - 2 5a 20 | | 20] | - | - ajoa(|]-|-|]-]- | 1. Vee (sat) se i{o5]-]15{-|15]- | - 4a fjo4]/--{|-|[-]- |- }o7] Vcetsat) clos | | 08] - |] o8| - } - 7atioz7 | |15]/-] 15) - [45 Is/p 20 2.5 1 - Tt - 1] - $s Ihfel 10 05 10 | 40| 10] 40] 10] 40 f=5 MHz . fr 10 05 50 | 200] 50 | 200| 50] 200 | mHz Cobo 0.4 MHz 10 50 | 150] 50| 150] 50] 150] pF 4foa4}-]-}/-]- | - | 01 d _ td 41 5s jos |}|o1]-jo1]- 4] - 4 [o4]]- f-] - |- fo2s d wr 1 5 [os | - [o25}- Jo25}- |- | us 4 foae}- | - [-]- [- 1 d ts 4! 5 lose} | af-]| a}-]- 4 loae]_-|-]/-}|-1- |os ty | 5 lose| - |os|- | os|- |- ReJc 4 5 - | 25; - | 25] - | 25 /)cw & Pulsed: pulse duration = 300 us, duty factor <2%, Veg value. CAUTION: The sustaining voltage Veg olsus) MUST NOT 4 Veg = 70 V, ty = 20 us be measured on a curve tracer. e B, = tay HARRIS SEMICOND SECTOR 2-298BUW64A, BUW64B, BUW64C (CURVES MUST BE S6E D MM 4302271 OO40721 OT] 25C LINEARLY WITH INCREASE To 35. IN TEMPERATURE) T-35~-19 a a J rey = - z ww 2 oe FOR SINGLE NONREPETITIVE PULSE VcEo (MAX) = 90 V (BUW64A) Vocgo (MAX.) 110 V(BUWE48) Vceo (MAX.}= 130 VIBUWE4C) 2 4 6 4 819 2 4 6 00 2 6 5 COLLECTOR -TO-EMITTER VOLTAGE (Vog) V 92068-31945 Fig. 1 Maximum operating areas for all types (To = 25 c). HARRIS SEMICOND SECTOR CASE TEMPERATURE (T.)= 100C FOR SINGLE NONREPETITIVE PULSE < I o wy -E = wy ec 2 eo S e o ww 3 8 PULSE OPERATION Vero (MAX) = 90 V (BUW64A) Veg (MAX )= 110 V (BUW648) Voeo (MAX }=130 VIBUWE4Q) 4 io 100 COLLECTOR -TO-EMITTER VOLTAGE (Veg) Vv g2CS-31946 Fig. 2 - Maximum operating areas for alf types (Te = 100 C). 2-299 MBHAS a | ra POWER TRANSISTORSSBE D MM 4302271 OO4O7ee T34 MBHAS BUW64A, BUW64B, BUW64C 1-35-19 RESISTANCE (@0)-"C/W. TRANSIENT 25 50 iJ - 0001 ol t t CASE c 9208-31837 PULSE WIDTH (tp)s yoes-aiese to Fig. 3 Dissipation and |5 4, derating curves for Fig. 4 Typical thermal-response characteristic all types. for all types. HARRIS SEMITCOND SECTOR 4 ' o H & = i 2 o S e o ww Z os | tz 14 16 0.1 | Ib COLLECTOR-TO-EMITTER SATURATION VOLTAGE [Vog(sat)] 9208-31840 COLLECTOR CURRENT (I)A sacs-sase Fig. 5 Typical de beta cnaracterisues for all Fig. 6 Typical collector-to-emitter saturation types. voltage characteristics for all types. CASE TEMPERATURE (To) = 25C COLLECTOR-TO-EMITTER VOLTAGE (Vp_)=10 FREQUENCY (1)*$ MHz g 24 2 (Iga o 04 oe b2 16 2 BASE-TO-EMITTER SATURATION VOLTAGE (Yeetsotf}-v 92CS - 31892 92CS~31841 Fig. 7 Typical base-to-emitter saturation Fig. 8 Typical small-signal forward-current transfer ratio voltage characteristic for all types. characteristic for all types (f = 5 MHz). 2-300BUW64A, BUW64B, BUW64C 5bE D 12 25C CASE TEMPERATURE [ 12 ul COLLECTOR CURRENT (Iq)-A COLLECTOR-TO-EMITTER VOLTAGE Wop)- 9208-31843 Fig. 9 Typical output characteristics for all types. (Te & lasec "Ig/0, Ip, * Ia, cc * 7OV, tp = 20ms COLLECTOR CURRENT (Ic)-A g2cs- 31645 Fig. 11 Typical saturated-switching-time charac- teristics as a function of collector current for all types (To = 125 ch. ADJ FOR Iai is2,2w Vel Ig CURRENT + PROBE Ig CURRENT 1 pF 0001p | 30 | 0.005 uF > 24a p50 MF 20 OTL aan S02 = 20 pS MIN FREQ=500 Hz Yen = ADd FOR Igo 430227) 0040723 974 MMHAS CASE TEMPERATURE {T,)* 25C Ig *Ig/10,Ip,7Le. Ver" TOV, tpt 20 a8 oe T-35-19 2 RISE STORAGE, AND FALL TIMES (t,,1g ,t Oo o | D2CS-S1804 3 4 S&S 6 7 COLLECTOR CURRENT (T)-A Fig. 10 Typical saturated-switching-time charac- teristics as a function of collector current for all types (To = 25 C). & iS dt Le es ms ES o s 2 BE cr 0 Be 5 a z 3 Ee to lo? 108 _ COLLECTOR-TO-BASE VOLTAGE (Vop)V OR EMITTER-TO-BASE VOLTAGE (Ven}V g2cs- 31806 Fig. 12 Typical common-base input (Cjp9) or output (Cop,/ capacitance characteristic for all types. HARRIS SEMICOND SECTOR Re* 15-202, low NON IND Qt, Q2 + 2N6354 Q3 = 2N3762 04,95, Q6,Q7 = CA3725 QUAD TRANSISTOR ARRAY * THIS CONNECTION SHOULD BE MADE AS CLOSE AS POSSIBLE TO COLLECTOR OF TRANSISTOR UNDER TEST & %& KELVIN SENSING CONNECTION NOTE BATTERY SYMBOLS Vcc , Vg). Vg2> VB(CLAMP) INDICATE RIGOROUSLY FILTERED VOLTAGE SOURCES AT THE CIRCUIT TERMINALS TO ACCOMODATE THE FAST ty AND ty TIMES AND HIGH CURRENTS PRESENT IN THE CIRCUIT 92CM- 31847 Fig. 13 Circuit for measuing switching times. 2-301SbE D MM 4302271 0040724 800 MMHAS BUW64A, BUW64B, BUW64C Ig, 5 X3 90 % agioe 1-35-19 I Cg90 % ya90% B10 % 280% tye A-B eX- 92CS- 3038IR1 BC | ye Y-Z teransition * XW NOTE: TRANSITION TIME FROM 00% a, TO 90% "Bo wusT BE LESS THAN 0.5 js. Fig. 14 Phase relationship between input and output currents showing reference points for specification of switching times. HARRIS SEMICOND SECTOR 2-302