CPH5901
No.8278-1/8
60612 TKIM/62005AC MSIM TB-00001557/32505AC TSIM TA-3705
SANYO Semiconductors
DATA SHEET
http://semicon.sanyo.com/en/network
Ordering number : EN8278B
Features
• Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
effi ciency greatly
•
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one package
• Common drain and emitter
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
[FET]
Drain-to-Source Voltage VDSX 15 V
Gate-to-Drain Voltage VGDS --15 V
Gate Current IG10 mA
Drain Current ID50 mA
Allowable Power Dissipation PDMounted on a ceramic board (600mm2×0.8mm) 350 mW
[TR]
Collector-to-Base Voltage VCBO 55 V
Collector-to-Emitter Voltage VCEO 50 V
Emitter-to-Base Voltage VEBO 6V
Collector Current IC150 mA
Collector Current (Pulse) ICP 300 mA
Base Current IB30 mA
Collector Dissipation PCMounted on a ceramic board (600mm2×0.8mm) 350 mW
[TR]
Total Power Dissipation PTMounted on a ceramic board (600mm2×0.8mm) 500 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7017A-007
CPH5901
Product & Package Information
• Package : CPH5
• JEITA, JEDEC : SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
21
453
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
0.95
1A
LOT No.
RANK
TL
543
12
TR : NPN Epitaxial Planar Silicon Transistor
FET : N-Channel Silicon Junction FET
High-Frequency Amplifi er. AM Amplifi er.
Low-Frequency Amplifi er Applications
CPH5901F-TL-E
CPH5901G-TL-E
CPH5901
No.8278-2/8
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
[FET]
Gate-to-Drain Breakdown Voltage V(BR)GDS IG=--10μA, VGS=0V --15 V
Gate Cutoff Current IGSS VGS=--10V, VDS=0V --1.0 nA
Cutoff Voltage VGS(off) VDS=5V, ID=100μA --0.2 --0.6 --1.4 V
Drain Current IDSS V
DS=5V, VGS=0V 6.0* 20.0* mA
Forward Transfer Admittance | yfs |VDS=5V, VGS=0V, f=1kHz 25 50 mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1kHz 10 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1kHzz 3.0 pF
Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB
[TR]
Collector Cutoff Current ICBO VCB=35V, IE=0A 0.1 μA
Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA
DC Current Gain hFE VCE=6V, IC=1mA 135 400
Gain-Bandwidth Product fTVCE=6V, IC=10mA 200 MHz
Output Capacitance Cob VCB=6V, f=1MHz 1.7 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.08
0.4
mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 55 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V
Turn-On Time ton See specifi ed Test Circuit. 0.15 ns
Storage Time tstg 0.75 ns
Fall Time tf0.20 ns
* : The CPH5901 is classifi ed by IDSS as follows : (unit : mA)
Rank F G
IDSS 6.0 to 12.0 10.0 to 20.0
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
CPH5901F-TL-E CPH5 3,000pcs./reel Pb Free
CPH5901G-TL-E CPH5 3,000pcs./reel
++
50Ω
INPUT OUTPU
T
VRRB
VCC=20V
220μF 470μF
VBE= --5V
PW=20μsIB1
IB2
D.C.≤1%
10IB1= --10IB2= IC=10mA
RL
CPH5901
No.8278-3/8
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- mA
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- mA
[FET]
[FET]
[FET]
VGS(off) -- IDSS
Drain Current, IDSS -- mA
[FET]
Cutoff Voltage, VGS(off) -- V
| yfs | -- ID
Drain Current, ID -- mA
Forward T ransfer Admittance, | yfs | -- mS
[FET] | yfs | -- IDSS
Drain Current, IDSS -- mA
Forward T ransfer Admittance, | yfs | -- mS
[FET]
Drain-to-Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
Ciss -- VDS Crss -- VDS
Drain-to-Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
[FET] [FET]
ITR10329
0 0.4 0.8 1.2 1.6 2.0
0
2
4
6
8
10
12
14
16
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
--0.5V
--0.6V
VGS=0V
--0.1V
--0.2V
--0.3V
--0.4V
ITR10330
0246810
0
4
8
12
16
20
--0.5V
--0.6V
IDSS=6mA
20mA
10mA
ITR10333 ITR10334
VDS=5V
f=1kHz
VGS=0V
f=1MHz VGS=0V
f=1MHz
1.0 5327532 10
5
3
3
2
10
7
100
7
5
ITR10335
VDS=5V
VGS=0V
f=1kHz
533275 10
5
3
2
100
10
7
ITR10336
1.0 23 3557710 2
2
7
5
3
3
10
2
1.0 1.0 23 57710 235
1.0
2
7
7
5
5
3
10
ITR10331
--1.2 --1.0 --0.8 --0.6 --0.4 --0.2 00
10
20
30
40
IDSS=20mA
15mA
10mA
6mA
57 2 335
10
7
--1.0
--0.1
5
3
2
2VDS=5V
ID=100
μ
A
ITR10332
VDS=5V
CPH5901
No.8278-4/8
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- mW
[FET]
ID=1mA
3mA
Frequency, f -- Hz
NF -- f
Noise Figure, NF -- dB
10 100 1k
51M
25225
10k 25
100k 25
10 100 1k
51M
25225
10k 25
100k 25 0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14 VDS=5V
Rg=1kΩ
Frequency, f -- Hz
NF -- f
Noise Figure, NF -- dB
VDS=5V
ID=10mA
Rg=500Ω
1k
Ω
10kΩ
ITR10337 ITR10338
10mA
50
30
20
40
10
00 0.4 1.00.80.60.2
50μA
100μA
150μA
200μA
250μA
300
μ
A
350μA
400μA
450μA
500μA
ITR10340
020 504010 30
ITR10341
12
10
6
4
8
2
0
Ta=75°C
--25°C
100
3
2
7
5
1000
2
7
5
3
0.1 325
1.0 32325
100 325 10
25
°
C
VCE=6V
ITR10343
Ta=75°C
--25°C
160
120
140
20
80
100
40
60
0
VCE=6V
25
°
C
0 0.2 0.4 0.80.6 1.0 1.41.2
ITR10342
IB=0μA
10μA
15μA
20μA
25μA
30μA
35μA
40μA
45μA
50μA
5μA
IB=0μA
0 20 40 60 80 100 120 140 160
0
100
50
200
300
150
250
350
400
IT09862
[FET] [FET]
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
[TR]
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
[TR]
Collector Current, IC -- mA
[TR]IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
[TR]
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
Mounted on a ceramic board (600mm
2
✕0.8mm)
CPH5901
No.8278-5/8
[TR]
fT -- IC
Collector Current, IC -- mA
Gain-Bandwidth Product, fT -- MHz
[TR]
Cib -- VEB
Input Capacitance, Cib -- pF
Emitter-to-Base Voltage, VEB -- V [TR]
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
[TR]
Collector Current, IC -- mA
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Dissipation, PC -- mW
Ambient Temperature, Ta -- °C
PC -- Ta [TR]
[TR]
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
3
100
2
5
7
3
2
5
7
1.0 10
52732 100
5732
3
1.0
10
2
3
2
5
5
7
1.0 10
57 5732
ITR10344 ITR10345
VCE=6V f=1MHz
0
400
300
200
50
100
350
250
150
2006040 80 100 140120 160
IT09863
1.0 723 5 72235
10 100
5
3
1.0
10
7
5
3
2
7IC / IB=10
ITR10348
75°C
Ta= --25
°
C
25°C
3
10
2
3
2
5
7
1.0
5
7
1.0 10
5757 32100
5732
ITR10346
f=1MHz
1.0 723 5 72235
10 100
5
3
2
0.1
1.0
7
5
3
2
3
2
7
IC / IB=10
ITR10347
25°C
Ta=75
°
C
--25
°
C
Mounted on a ceramic board (600mm
2
✕0.8mm)
CPH5901
No.8278-6/8
Embossed Taping Specifi cation
CPH5901F-TL-E, CPH5901G-TL-E
CPH5901
No.8278-7/8
Outline Drawing Land Pattern Example
CPH5901F-TL-E, CPH5901G-TL-E
Mass (g) Unit
0.02
* For reference
mm Unit: mm
0.6
2.4 1.4
0.95 0.95
CPH5901
PS No.8278-8/8
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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