LVP640 N-Channel 200V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 200 V, DC-DC Converters UPS & Monitors RDS(ON ) = 0.18, Typ = 0.15 High Power Switching Car Inventer ID = 18 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS 25 V TC=25 Continuous Drain Current Pulsed Drain Current ID TC=100 a 18 A 11.4 IDM 72 A PD 140 W TJ, Tstg -55 to 150 IAS 18 A EAS 300 mJ Thermal Resistance-Junction to Ambient (max.)* RJA 62.5 Thermal Resistance-Junction to Case RJC 0.9 TC=25 Power Dissipation Operating Junction and Storage Temperature Range Avalanche Current Avalanche Energy with Single Pulse b /W a. Pulse width limited by safe operating area b. Starting Tj=25, L = 1.32mH, IAS =18A, VDD = 50V, RG = 25 * The device mounted on 1in2 FR4 board with 2 oz copper Rev.1, Nov. 2010 01 LVP640 N-Channel 200V Power MOSFET Electrical Characteristics (TA =25 Unless Otherwise Specified) Symbol Parameter Limit Min. Typ. BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 200 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 2.0 IGSS Gate-Body Leakage VGS=25V IDSS Zero Gate Voltage Drain Current VDS=Max Rating, VGS=0V RDS(ON) Drain-Source On-Resistance VGS=10V, ID=9A 0.15 GFS(ON) Forward Transconductance VDS=30V, ID=9A 11 Max. Unit STATIC V 4.0 V 100 nA 1 A 0.18 S DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss 37 VDS=160V, VGS=10V, 48 nC 6.3 ID=18A 18.3 870 1130 165 215 Reverse Transfer Capacitance 60 80 td(on) Turn-On Delay Time 15 40 tr Turn-On Rise Time VDS=100V, ID=18A, 125 260 td(off) Turn-Off Delay Time RG=25 100 210 tf Turn-Off Fall Time 50 110 VDS=25V, VGS=0V, f=1MHz pF ns Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. IS Continuous Source current ------ ISM Pulsed Source Current 72 VSD Diode Forward voltage------------- 1.5 trr Reverse Recovery Time Qrr Reverse Recovery Charge 18 Units A Test Condition Integral reverse PN diode in The MOSFET V IS=18A , VGS = 0V 170 ns IF = 18A, VGS = 0V, 0.99 nC dIF / dt = 100A/s Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Rev.1, Nov. 2010 02 LVP640 N-Channel 200V Power MOSFET Typical Characteristics (TJ =25 Noted) Rev.1, Nov. 2010 03 LVP640 N-Channel 200V Power MOSFET Typical Characteristics (TJ =25 Noted) Rev.1, Nov. 2010 04 LVP640 N-Channel 200V Power MOSFET Test Circuit and Waveform Rev.1, Nov. 2010 05 LVP640 N-Channel 200V Power MOSFET Package Dimension TO-220 Rev.1, Nov. 2010 06 LVP640 N-Channel 200V Power MOSFET Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC. Rev.1, Nov. 2010 07