N
-
Channel
20
0V Power
MOSFET
LVP640
01
Rev
.1,
Nov
. 2010
a. Pulse width limited by safe operating area
b. Starting Tj=25℃, L = 1.32mH, I
AS
=18A, V
DD
= 50
V
, R
G
= 25 Ω
*
The device mounted on 1in2 FR4 board with 2 oz copper
Parameter Symbol
Limit Unit
Drain-Source Voltage V
DSS
200 V
Gate-Source Voltage V
GSS
±25 V
T
C
=25℃ 18
Continuous Drain Current T
C
=100℃ I
D
11.4
A
Pulsed Drain Current
a
I
DM
72 A
Power Dissipation T
C
=25℃ P
D
140 W
Operating Junction and Storage Temperature Range T
J,
T
stg
-55 to 150 ℃
Avalanche Current I
AS
18 A
Avalanche Energy with Single Pulse
b
E
AS
300 mJ
Thermal Resistance-Junction to Ambient (max.)
*
R
θJA
62.5
Thermal Resistance-Junction to Case R
θJC
0.9
℃/W
Absolute Maximum Ratings (T
A
=25℃ Unless Otherwise Noted)
B
VDSS
= 200 V,
R
DS(ON )
= 0.18Ω,
Typ = 0.15Ω
ID = 18 A
Features:
Avalanche Rugged Technology
Rugged Gate Oxide Technology
High di/dt Capability
Improved Gate Charge
Application
DC-DC Converters
UPS & Monitors
High Power Switching
Car Inventer
N
-
Channel
20
0V Power
MOSFET
LVP640
02
Rev
.1,
Nov
. 2010
Symbol
Parameter
Limit
Min.
Typ. Max. Unit
STATIC
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250µA 200 V
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250µA 2.0 4.0 V
I
GSS
Gate-Body Leakage V
GS
=±25V ±100 nA
I
DSS
Zero Gate Voltage Drain Current V
DS
=Max Rating, V
GS
=0V 1 µA
R
DS(ON)
Drain-Source On-Resistance V
GS
=10V, I
D
=9A 0.15 0.18 Ω
G
FS(ON)
Forward Transconductance V
DS
=30V, I
D
=9A 11 S
DYNAMIC
Qg Total Gate Charge
37 48
Qgs Gate-Source Charge
6.3
Qgd Gate-Drain Charge
V
DS
=160V, V
GS
=10V,
I
D
=18A
18.3
nC
C
iss
Input Capacitance
870 1130
C
oss
Output Capacitance
165 215
C
rss
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V,
f=1MHz
60 80
pF
t
d(on)
Turn-On Delay Time
15 40
t
r Turn-On Rise Time
125 260
t
d(off)
Turn-Off Delay Time
100 210
t
f
Turn-Off Fall Time
V
DS
=100V, I
D
=18A,
R
G
=25Ω
50 110
ns
Symbol Characteristic Min.
Typ.
Max.
Units
Test Condition
I
S
Continuous Source current ------
18
I
SM
Pulsed Source Current 72
A Integral reverse PN diode in The
MOSFET
V
SD
Diode Forward voltage------------- 1.5 V I
S
=18A , V
GS
= 0V
trr Reverse Recovery Time 170 ns
Qrr Reverse Recovery Charge 0.99
nC
I
F
= 18A, V
GS
= 0V,
dI
F
/ dt = 100A/µs
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Source-Drain Diode Ratings and Characteristics
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
N
-
Channel
20
0V Power
MOSFET
LVP640
03
Rev
.1,
Nov
. 2010
Typical Characteristics (TJ =25 ℃
℃℃
℃Noted)
N
-
Channel
20
0V Power
MOSFET
LVP640
04
Rev
.1,
Nov
. 2010
Typical Characteristics (TJ =25 ℃
℃℃
℃Noted)
N
-
Channel
20
0V Power
MOSFET
LVP640
05
Rev
.1,
Nov
. 2010
Test Circuit and Waveform
N
-
Channel
20
0V Power
MOSFET
LVP640
06
Rev
.1,
Nov
. 2010
TO-220
Package Dimension
N
-
Channel
20
0V Power
MOSFET
LVP640
07
Rev
.1,
Nov
. 2010
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
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products for any particular purpose, nor does LSC assume any liability for application
assistance or customer product design. LSC does not warrant or accept any liability
with products which are purchased or used for any unintended or unauthorized
application.
No license is granted by implication or otherwise under any intellectual property rights
of LSC.
LSC products are not authorized for use as critical components in life support devices
or systems without express written approval of LSC.
