Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device TO-263/D2PAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to 0.413(10.50) 0.394(10.00) 0.059(1.50) 0.031(0.80) optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage drop. -High surge capability. -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planar chip, metal silicon junction. -Lead-free parts meet environmental standards of 0.185(4.70) 0.169(4.30) 0.055(1.40) 0.047(1.20) 4 0.370(9.40) 0.327(8.30) 1 2 3 0.114(5.30) 0.098(4.40) MIL-STD-19500 /228 0.205(5.20) 0.189(4.80) Mechanical data -Epoxy: U/L 94-V0 rate flame retardant. -Case: TO-263/D2PAK, Transfer Molded. -Terminals: Solderable per MIL-STD-202, 2=4 0.024(0.60) 0.014(0.35) 0.063(1.60) 0.055(1.30) 0.106(2.70) 0.091(2.30) Dimensions in inches and (millimeters) method 208. -Polarity: As marked. -Weunting Position: Any -Weight:1.46 gram(approx.). 3 Maximum Ratings (At Ta=25 O C, unless otherwise noted) Symbol CDBD 8060-G CDBD 8100-G Unit Maximum Recurrent peak reverse voltage VRRM 60 100 V Maximum RMS voltage VRMS 42 70 V Maximum DC blocking voltage VDC 60 100 V Parameter Forward rectified current (See fig. 1) IO Maximum forward voltage at IO VF Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 175 A Maximum Reverse current at 25C per leg (Note1) IR 5.0 mA Maximum Reverse current at 100C per leg (Note1) IR 50 mA Typical Thermal resistance junction to case Per Leg RJC 4.0 C/W TJ -55 to +150 C TSTG -55 to +150 C Operating temperature range Storage temperature range 8.0 0.75 A 0.85 V Notes: 1. Pulse Test: 300S pulse width, 1% duty cycle. REV:A Page 1 QW-BB047 Comchip Technology CO., LTD. Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist RATING AND CHARACTERISTIC CURVES (CDBD8060-G Thru. CDBD8100-G) FIG.1- Forward Derating Curve FIG.2-Peak Forward Surge Current 300 8 Peak Forward Surge Current ,(A) Average Firward Rectified Current ,(A) 9 7 6 5 4 3 2 250 200 150 100 50 1 0 0 20 40 60 80 0 100 120 140 160 180 200 1 10 100 Case Temperature, (C) Number of Cycles at 60Hz FIG.3-Typical Forward Characteristic Per Leg FIG.4-Typical Reverse Characteristics 100 10 Instantaneous Reverse Current, (mA) Instantaneous Forward Current, ( A ) TJ=125 C CDBD8060-G 10 CDBD8100-G 1.0 1.0 TJ=75 C 0.1 TJ=25 C 0.01 CDBD8060-G CDBD8100-G 0.1 0.1 0.3 0.5 0.7 0.9 Instantaneous Forward Voltage, ( V ) 1.1 0.001 0 20 40 60 80 100 120 140 Peraent of Rated Voltage Peak Reverse Voltage, (%) REV:A Page 2 QW-BB047 Comchip Technology CO., LTD. Comchip Chip Schottky Barrier Rectifier SMD Diode Specialist Marking Code Marking Code Part Number CDBD8060-G SD8L60 CDBD8100-G SD8L100 XXXXXX XXXXXX / XXXXXXX = Product type marking code Suggested PAD Layout TO-263 / D2PAK X1 SIZE (mm) (inch) A 9.50 0.374 B 2.50 0.098 C 16.90 0.665 Y1 C A X1 10.80 0.425 X2 1.10 0.043 Y1 11.40 0.449 Y2 3.50 0.138 Y2 X2 B Standard Packaging TUBE PACK Case Type TO-263 / D2PAK TUBE BOX ( pcs ) ( pcs ) 50 2,000 REV: A Page 3 QW-BB047 Comchip Technology CO., LTD. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Comchip Technology: CDBD8100-G CDBD8060-G