Parameter Symbol Unit
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Forward rectified current (See fig. 1)
Maximum forward voltage at IO
Forward surge current, 8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Reverse current at 25°C per leg (Note1)
Page 1
QW-BB047
Chip Schottky Barrier Rectifier
REV:A
Comchip Technology CO., LTD.
VRRM
VRMS
VDC
IO
VF
IFSM
IR
TJ
60
42
60
8.0
0.75
175
5.0
50
100
70
100
V
V
V
A
V
A
mA
°C
0.85
Operating temperature range
Storage temperature range TSTG
4.0
°C
-55 to +150
3
2=4 Dimensions in inches and (millimeters)
TO-263/D2PAK
0.413(10.50)
0.394(10.00)
0.114(5.30)
0.098(4.40)
0.370(9.40)
0.327(8.30)
0.059(1.50)
0.031(0.80)
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.30)
0.024(0.60)
0.014(0.35)
0.055(1.40)
0.047(1.20)
0.185(4.70)
0.169(4.30)
0.106(2.70)
0.091(2.30)
Reverse Voltage: 60 to 100 Volts
Forward Current: 8.0 Amp
RoHS Device
CDBD8060-G Thru. CDBD8100-G
O
Maximum Ratings (At Ta=25 C, unless otherwise noted)
8060-G
CDBD
8100-G
CDBD
IRmA
RθJC °C/W
Typical Thermal resistance junction to case Per Leg
-55 to +150
Maximum Reverse current at 100°C per leg (Note1)
321
4
Features
-Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
-Low profile surface mounted application in order to
optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage drop.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip, metal silicon junction.
-Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Mechanical data
Polarity: As marked.-
-Weight:1.46 gram(approx.).
Weunting Position: Any
-
Notes: 1. Pulse Test: 300µS pulse width, 1% duty cycle.
Case: TO-263/D2PAK, Transfer Molded.
-
-Terminals: Solderable per MIL-STD-202,
method 208.
-Epoxy: U/L 94-V0 rate flame retardant.
Comchip
S M D D i o d e S p e c i a l i s t
FIG.1- Forward Derating Curve
Average Firward Rectified Current ,(A)
1.0
10
100
FIG.3-Typical Forward Characteristic Per Leg
Instantaneous Forward Current, ( A )
0.1
CDBD8060-G
Instantaneous Forward Voltage, ( V )
Case Temperature, (°C)
FIG.2-Peak Forward Surge Current
1
2
3
4
5
6
0
0 20 40 60 80 100 120 140 160 180 200
Chip Schottky Barrier Rectifier
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QW-BB047
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Comchip Technology CO., LTD.
RATING AND CHARACTERISTIC CURVES (CDBD8060-G Thru. CDBD8100-G)
7
8
9
50
150
200
250
300
0
100
10 100 1
Number of Cycles at 60Hz
0.1 0.3 0.5 0.7 0.9 1.1
CDBD8100-G
1.0
Instantaneous Reverse Current, (mA)
Peraent of Rated Voltage Peak Reverse Voltage, (%)
FIG.4-Typical Reverse Characteristics
0.1
0.001
10
0 20 40 60 120 14080 100
0.01
CDBD8060-G
CDBD8100-G
TJ=25 °C
TJ=75 °C
TJ=125 °C
Peak Forward Surge Current ,(A)
Comchip
S M D D i o d e S p e c i a l i s t
Chip Schottky Barrier Rectifier
Page 3
QW-BB047
REV: A
Comchip Technology CO., LTD.
Suggested PAD Layout
Part Number Marking Code
Marking Code
CDBD8060-G
Standard Packaging
SIZE
(inch)
0.374
(mm)
9.50
2.50
16.90
0.098
0.665
10.80 0.425
X2 1.10 0.043
B
C
X1
A
TO-263 / D2PAK
CDBD8100-G
C
X1
X2
Y1
A
B
Y2
11.40 0.449
Y2 3.50 0.138
Y1
XXXXXX / XXXXXXX = Product type marking code
XXXXXX
SD8L60
SD8L100
Case Type
TO-263 / D2PAK 50
TUBE
( pcs )
TUBE PACK
2,000
BOX
( pcs )
Comchip
S M D D i o d e S p e c i a l i s t
