G E SOLID STATE Optoelectronic Specifications O14 75081 00 ewe DE @ 3a 14784 8 w 1mm Aperture Photon Coupled Interrupter Module H21B1,H21B2,H21B3 The GE Solid State H21B Interrupter Module is a gallium arse- nide infrared emitting diode coupled to a silicon darlington con- nected phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling effi- ciency, ambient light rejection, cost, and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an ON into an mes | or a @] EF oe eat aL ho MIUMETERS + acy [MAX + 5)" I4 ap PACFLE wOTES 1. INCH OFMENSIONS ANE DERIVED FROM MILLIMETERS OFF state. ues | 2 to , re ne, . . & [au | se | a] 20 Lae absolute maximum ratings: (25C) fe (22 [as | eslae| | * pageants TOTAL DEVICE & [sb |) tof Storage Temperature Tsrg 55C to +1 00C Operating Temperature Ty 55C to +100C Lead Soldering Temperature Ty, 260C (5 seconds maximum) 3 INFRARED EMITTING DIODE DARLINGTON CONNECTED PHOTOTRANSISTOR Power Dissipation Py *100 mW Power Dissipation . Pp *#150 mW Forward Current Ip 60 mA Collector Current Ic 100 mA (Continuous) (Continuous) Forward Current (Peak) Ip 3 A Collector-Emitter VcEo 30 Vv (Pulse Width < 1 ys Voltage PRR < 300 pps) Emitter-Collector Veco 7 Vv Reverse Voltage R 6 Vv Voltage *Derate 1.33 mW/C above 25C ambient. **Derate 2.0 mW/C above 25C ambient. individual electrical characteristics:(25 C) (See Note 1) EMITTER MIN. | TYP. | MAX. | UNITS DETECTOR - MIN. | TYP. { MAX. | UNITS Reverse Breakdown Voltage | 6 _ _ Vv Breakdown Voltage 30 - - v Very Ip = 10uA Vesrycezo Ic =1mA Forward Voltage - - 17 v Breakdown Voltage 7 - - v VE lp= 60mA Vipr)ECoO Ip = 100A Reverse Current - _ 100 nA Collector Dark Current _ = 100 nA Ig Vea = 5V IcEo Vcr = 25V Capacitance - 30 - pF Capacitance - 5 8 pF C, V=0,f=1MHz Cee Vor = 5V, f= 1MHz coupled electrical characteristics: (25C) (see Note 1) H21B1 H21B2 H21B3 UNITS MIN, | TYP. | MAX.] MIN. | TYP. | MAX. | MIN. [ TYP. | MAX. Icgion) Ip = 2mA, Vor = 1.5V os | - | fao |] - | [20] - | - | ma Ice(on) Ir = SmA, Vog = 1.5V 25 |} - |) -~|5s0 | - | - | 1 | - | - | ma IcE(on) Ip = 10mA, Vcr =1.5V 25 - - 14 - - 25 _ _ mA ce(saty) Ir = 10mA, Io = 1.8mA _ - 1.0 - - 10 - - 1.0 v * Vcr(sat) Ip = 60mA, Ie = 50mA - - - - - 15 - _ 1.5 Vv ton Vec= 5V, Ip = 10mA, Ry = 7502 - 45 - - 45 - - 45 | - bs Veo= 5V, Ip =60mA, Ry = 752 ~}|-}-}]-]7 7-7 - 7 1- | gs tort Voec= 5V, Ip = 10mA, Ry = 7502 | 250] - - | 250] | 250 | us Vec = 5V,I-= 60mA, Ry = 759) - _ - - 45 - - 45 - BS Note 1: Stray irradiation can alter values of characteristics. Adequate shielding should be provided. 308G E SOLID STATE O1 DE 38?S5081 0019785 0 H21B1, H21B2, H21B3 Optoelectronic Specifications T'4/-73 TYPICAL CHARACTERISTICS NORMALIZED TO Vee ESV, Ip Sma, Tas 25C INPUT PULSED Ss NORMALIZED TO: Ip *5mA Vogt. SV PULSED PWH100 ps PRR #100 pps Tgegony NORMALIZED OUTPUT CURRENT Tee cony NORMALIZED OUTPUT CURRENT lo g0l00 200 ou Tp-INPUT GURRENT-mA Ty-AMBIENT TEMPERATURE~*C 1. OUTPUT CURRENT VS. INPUT CURRENT 2. OUTPUT CURRENT VS. TEMPERATURE NORMALIZED TO: Ip | LSMA Tye 25 NORMALIZED TO: Ir lOmA Vogr 25V PULSED Ta 225C PW=100 ps,PRR*I00 pps NORMALIZED TO: VR 5V Tas esec Yeetsat) NORMALIZED TcEo-NORMALIZED DARK CURRENT IR~NORMALIZED LEAKAGE CURRENT To-AMBIENT TEMPERATURE -C TaAMBIENT TEMPERATURE-C Ta-AMBIENT TEMPERATURE-C 3. Voe (sat) VS. TEMPERATURE 4. LEAKAGE CURRENTS VS. TEMPERATURE d-DISTANCE-mils 67.5 236.2 315 393.7 PW 300 ps PRR 79 pps 5 Ip= RL AMPS,Veg = 5V NORMALIZED TO! RL 7502 toy AND togg NORMALIZED Tee ton) NORMALIZED OUTPUT CURRENT 10 20 40 60 0 100 Ri LOAD RESISTANCE-OHMS d-DISTANCE-mm 5. SWITCHING SPEED VS. R, 6. OUTPUT CURRENT VS. SHIELD DISTANCE 309