VCE IC = = 1200 V 100 A IGBT-Die 5SMX 12L1262 Die size: 12.6 x 12.6 mm Doc. No. 5SYA 1631-00 Feb. 05 * Low loss, rugged SPT technology * Smooth switching for good EMC * Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V, Tvj 25 C Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 900 V, VCEM 1200 V VGE 15 V, Tvj 125 C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 1200 V 100 A 200 A 20 V 10 s 150 C 5SMX 12L1262 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 1200 Collector-emitter saturation voltage VCE sat IC = 100 A, VGE = 15 V Tvj = 25 C VCE = 1200 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 125 C VGE(TO) Gate charge Qge Input capacitance Cies 1.7 1.9 IC = 100 A, VCE = 600 V, VGE = -15 ..15 V 400 4.5 6.5 V 1260 0.42 Internal gate resistance RGint 4 Turn-on delay time td(on) Fall time Turn-on switching energy Turn-off switching energy Short circuit current tf Eon Eoff ISC nC 8.9 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C Cres td(off) A nA Reverse transfer capacitance Turn-off delay time A 200 Coes tr V -200 Output capacitance Rise time Unit V 100 Tvj = 125 C IC = 4 mA, VCE = VGE, Tvj = 25 C 2.3 2.1 Tvj = 25 C ICES max V Tvj = 125 C Collector cut-off current Gate-emitter threshold voltage 2) VGE = 0 V, IC = 1 mA, Tvj = 25 C typ 0.65 VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 220 Tvj = 125 C 260 Tvj = 25 C 65 Tvj = 125 C 65 VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductive load Tvj = 25 C 560 Tvj = 125 C 630 Tvj = 25 C 40 Tvj = 125 C 60 Tvj = 25 C 10 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load, FWD: 5SLX12H1200 VCC = 600 V, IC = 100 A, VGE = 15 V, RG = 10 , L = 60 nH, inductive load nF ns ns ns ns mJ Tvj = 125 C 12 Tvj = 25 C 6.8 mJ Tvj = 125 C tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 900 V, VCEM 1200 V 10.3 560 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1631-00 Feb. 05 page 2 of 5 5SMX 12L1262 Mechanical properties Parameter Unit Dimensions Overall die L x W 12.6 x 12.6 mm exposed L x W (except gate pad) front metal 11.0 x 11.0 mm 1.2 x 1.2 mm 130 20 m 4 m 1.8 m gate pad LxW thickness Metallization 3) 3) front (E) AlSi1 back (C) Al / Ti / Ni / Ag For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. Outline drawing G Emitter Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1631-00 Feb. 05 page 3 of 5 5SMX 12L1262 200 200 VCE = 20 V 25 C 150 125 C IC [A] IC [A] 150 100 100 125 C 50 50 25 C VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 6 7 8 9 10 11 12 VGE [V] VCE [V] Fig. 1 5 Typical on-state characteristics Fig. 2 Typical transfer characteristics 0.050 0.050 VCC = 600 V RG = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH 0.045 0.040 0.035 VCC = 600 V IC = 100 A VGE = 15 V Tvj = 125 C L = 60 nH 0.045 0.040 0.035 Eon, Eoff [J] Eon, E off [J] Eon 0.030 0.025 0.020 Eon 0.030 0.025 0.020 Eoff 0.015 0.015 Eoff 0.010 0.010 0.005 0.005 0.000 0.000 0 50 100 150 200 250 0 IC [A] Fig. 3 Typical switching characteristics vs collector current 10 20 30 40 50 60 70 RG [ohm] Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1631-00 Feb. 05 page 4 of 5 5SMX 12L1262 100 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 600 V 15 Cies 10 C [nF] VGE [V] VCC = 800 V 10 Coes 1 5 Cres IC = 100 A Tvj = 25 C 0 0.1 0.0 Fig. 5 0.2 0.4 0.6 Qg [C] 0.8 Typical gate charge characteristics 1.0 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA 1631-00 Feb. 05