To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS (Unit : mm) This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 switch. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES * Low on-resistance RDS(on)1 = 18.0 m (TYP.) (VGS = 10 V, I D = 3.5 A) * Built-in G-S protection diode 0.05 MIN. * Small and surface mount package (Power SOP8) 4.4 5.37 MAX. 0.8 +0.10 -0.05 1.8 MAX. * Low Ciss : Ciss = 730 pF (TYP.) 6.0 0.3 4 0.15 RDS(on)2 = 28.0 m (TYP.) (VGS = 4.5 V, I D = 3.5 A) 1.44 1 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE PA1708G Power SOP8 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (T A = 25C, All terminals are connected) Drain to Source Voltage Note1 VDSS 40 V Gate to Source Voltage Note2 VGSS 25 V Drain Current (DC) ID(DC) 7.0 A ID(pulse) 28 A PT 2.0 W Channel Temperature Tch 150 C Storage Temperature Tstg -55 to + 150 C Drain Current (pulse) Note3 Total Power Dissipation (TA = 25C) Note4 Drain Body Diode Gate Gate Protection Diode Source Notes 1. VGS = 0 V 2. VDS = 0 V 3. PW 10 s, Duty Cycle 1 % 4. Mounted on ceramic substrate of 1200 mm2 x 1.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G13603EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark shows major revised points. (c) 1998 PA1708 ELECTRICAL CHARACTERISTICS (T A = 25C, All terminals are connected) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 3.5 A 18.0 24.0 m RDS(on)2 VGS = 4.5 V, ID = 3.5 A 28.0 40.0 m VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 4.0 8.4 Drain Leakage Current IDSS VDS = 40 V, VGS = 0 V 10 A Gate to Source Leakage Current IGSS VGS = 25 V, VDS = 0 V 10 A Input Capacitance Ciss VDS = 10 V 730 pF Output Capacitance Coss VGS = 0 V 340 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) ID = 3.5 A 16 ns VGS(on) = 10 V 96 ns td(off) VDD = 20 V 49 ns tf RG = 10 30 ns Total Gate Charge QG ID = 7.0 A 20 nC Gate to Source Charge QGS VDD = 32 V 2.5 nC Gate to Drain Charge QGD VGS = 10 V 6.8 nC VF(S-D) IF = 7.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 7.0 A, VGS = 0 V 32 ns Reverse Recovery Charge Qrr di/dt = 100 A/ s 25 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form = 1 s Duty Cycle 1 % tr td(on) ton IG = 2 mA RL 50 VDD 90 % ID 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff Data Sheet G13603EJ2V0DS PA1708 TYPICAL CHARACTERISTICS (T A = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 TA - Ambient Temperature - C Mounted on ceramic substrate of 1200mm 2 x1.7mm 2.4 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 100 (V 10 ID - Drain Current - A Mounted on ceramic substrate of 1200mm 2 x1.7mm ID(pulse) = 28 A PW ID(DC) = 7 A PW Po we r 1 PW Di ss ipa ms =1 0m =1 s 00 ms tio nL im 0.1 0.01 0.1 =1 ite Pulsed ID - Drain Current - A d ite im ) )L V on S( 10 RD GS = d VGS = 10 V 30 4.5 V 20 10 TA = 25C Single Pulse 1 10 40 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 1 TA = 75C 125C 150C TA = 25C -25C -50C 0.1 VDS = 10 V 0 1 2 3 4 5 6 7 8 VGS - Gate to Source Voltage - V Data Sheet G13603EJ2V0DS 3 PA1708 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1 000 Rth(ch-a) = 62.5C/W 100 10 1 0.1 0.01 Mounted on ceramic substrate of 1200mm2 x 1.7mm Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1000 100 10 VDS =10 V Pulsed TA = -50C -25C 25C 75C 125C 150C 1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - m ID- Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 70 60 50 40 VGS = 4.5 V 30 20 10 V 10 0 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 70 60 50 40 30 ID = 3.5 A 20 10 5 0 15 10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 4 3 2 1 0 -50 0 50 100 150 Tch - Channel Temperature - C ID - Drain Current - A Data Sheet G13603EJ2V0DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 40 IF - Diode Forward Current - A VGS = 4.5 V 30 10 V 20 10 100 VGS =10 V 10 0V 1 0.1 ID = 3.5 A 0 -40 -20 0 0 20 40 60 80 100 120 140 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss Coss 100 Crss 1 100 tf 100 td(off) td(on) 10 VDS = 20 V VGS = 10 V RG = 10 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100A/s VGS = 0 V 100 10 1 0.1 tr VDS - Drain to Source Voltage - V 1 000 trr - Reverse Recovery Diode - ns 10 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz 1000 0.1 1.5 1 000 1 10 100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 10000 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - C ID = 7 A VDD = 32 V 20 V 8V VGS 10 40 8 30 6 20 4 10 0 2 VDS 5 10 15 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m PA1708 0 20 QG - Gate Charge - nC ID - Drain Current - A Data Sheet G13603EJ2V0DS 5 PA1708 [MEMO] 6 Data Sheet G13603EJ2V0DS PA1708 [MEMO] Data Sheet G13603EJ2V0DS 7 PA1708 * The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4