RF PhotoMOS (AQV22PN) Lower output capacitance and on resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). FEATURES 6.40.05 .252.002 3.90.2 .154.008 8.80.05 .346.002 RF PhotoMOS (AQV22PN) 1. PhotoMOS relay with high response speed, low leakage current and low On resistance 2. Low capacitance between output terminals ensures high response speed: The capacitance between output terminals is small, typically 10 pF. This enables for a fast operation speed of 200 s. 3. High sensitivity and low On resistance Maximum 0.1 A of load current can be controlled with input current of 5 mA. The On resistance is less than our conventional models. With no metallic contacts, the PhotoMOS relay has stable switching characteristics. 6.40.05 .252.002 3.60.2 .142.008 8.80.05 .346.002 mm inch 1 6 2 5 3 4 4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 30 pA even with the rated load voltage of 200 V (AQV227N). 5. Controls low-level analog signals PhotoMOS relay features extremely low closed-circuit offset voltages to enable control of small analog signals without distortion. 6. Low terminals electromotive force (approx. 1 V) TYPICAL APPLICATIONS * Measuring devices * Scanner, IC checker, Board tester TYPES Part No. Output rating* Type Through hole terminal Packing quantity Surface-mount terminal Tape and reel packing style Load voltage Load current 200 V 70 mA AQV227N 400 V 50 mA AQV224N Tube packing style Picked from the 1/2/3-pin side Picked from the 4/5/6-pin side Tube Tape and reel AQV227NA AQV227NAX AQV227NAZ 1,000 pcs. AQV224NA AQV224NAX AQV224NAZ 1 tube contains 50 pcs. 1 batch contains 500 pcs. AC/DC type *Indicate the peak AC and DC values. Note: For space reasons, the package style indicator "X" or "Z" are not marked on the relay. RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Item Input Type of Symbol connection AQV227N(A) AQV224N(A) LED forward current IF 50 mA LED reverse voltage VR 5V Peak forward current IFP 1A Power dissipation Pin 75 mW Load voltage (peak AC) VL Continuous load current IL Output Peak load current Ipeak Power dissipation Pout f = 100 Hz, Duty factor = 0.1% 200 V 400 V A 0.07 A 0.05 A B 0.08 A 0.06 A C 0.10 A 0.08 A 0.21 A 0.15 A PT 410 mW I/O isolation voltage Viso 1,500 V AC Operating Topr -40C to +85C -40F to +185F Storage Tstg -40C to +100C -40F to +212F ds_x615_en_aqv22n: 181206J A connection: Peak AC, DC B, C connection: DC A connection: 100 ms (1 shot), VL = DC 360 mW Total power dissipation Temperature limits Remarks Non-condensing at low temperatures 1 RF PhotoMOS (AQV22PN) 2. Electrical characteristics (Ambient temperature: 25C 77F) Type of Symbol connection Item Typical LED operate current Maximum Minimum LED turn off current Input Typical Typical LED dropout voltage Maximum Typical Maximum Typical On resistance Maximum Typical Output Maximum Typical Output capacitance Switching speed Transfer characteristics Turn on time* Turn off time* Typical Maximum Typical Maximum Typical Maximum Typical I/O capacitance Maximum Initial I/O isolation resistance -- IFoff -- VF -- Ron A Ron B Ron C Cout Maximum Off state leakage current IFon Minimum AQV227N(A) 0.90 mA -- Ton -- Toff -- Ciso -- Riso -- Remarks IL = Max. 3.0 mA 0.4 mA IL = Max. 0.85 mA 1.25 V (1.14 V at IF = 5 mA) IF = 50 mA 1.5 V 30 70 50 100 16 55 25 70 8 28 12.5 35 IF = 5 mA IL = Max. Within 1 s on time IF = 5 mA IL = Max. Within 1 s on time IF = 5 mA IL = Max. Within 1 s on time IF = 0 VB = 0 f = 1 MHz 10 pF -- ILeak AQV224N(A) 15 pF 30 pA 90 pA 10 nA 0.20 ms IF = 0 VL = Max. IF = 5 mA IL = Max. 0.5 ms 0.08 ms IF = 5 mA IL = Max. 0.2 ms 0.8 pF 1.5 pF f = 1 MHz VB = 0 1,000 M 500 V DC Note: Recommendable LED forward current IF = 5mA. Type of connection *Turn on/Turn off time Input 90% Output 10% Toff Ton Q Dimensions Q Schematic and Wiring Diagrams Q Cautions for Use REFERENCE DATA 1. Load current vs. ambient temperature characteristics 2. On resistance vs. ambient temperature characteristics 3. Turn on time vs. ambient temperature characteristics Allowable ambient temperature: -40C to +85C -40F to +185F Type of connection: A Measured portion: between terminals 4 and 6; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: AQV227N, AQV224N; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 1.0 120 150 100 AQV227N AQV224N 80 60 40 Turn on time, ms Load current, mA On resistance, 100 0.8 0.6 0.4 AQV227N AQV227N 50 AQV224N 0.2 20 AQV224N 0 -40 -20 2 0 20 40 60 80 85100 Ambient temperature, C 0 -40 -20 0 20 40 60 80 85 Ambient temperature, C 0 -40 -20 0 20 40 60 8085 Ambient temperature, C ds_x615_en_aqv22n: 181206J RF PhotoMOS (AQV22PN) 4. Turn off time vs. ambient temperature characteristics 5. LED operate current vs. ambient temperature characteristics 6. LED turn off current vs. ambient temperature characteristics Sample: AQV227N, AQV224N; LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: AQV227N, AQV224N; Load voltage: Max. (DC); Continuous load current: Max. (DC) Sample: AQV227N, AQV224N; Load voltage: Max. (DC); Continuous load current: Max. (DC) 5 0.3 0.2 0 4 3 2 AQV227N 1 0.1 AQV224N AQV227N -20 -40 0 0 20 40 60 80 85 Ambient temperature, C LED turn off current, mA 0.4 5 -40 -20 Sample: All types; LED current: 5 to 50 mA Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F Current, mA LED dropout voltage, V 100 1.4 1.3 -4 -3 --2 AQV227N AQV224N 50 1 2 3 4 Voltage, V -50 -100 -20 80 85 0 20 40 60 Ambient temperature, C Sample: AQV227N, AQV224N; Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F 10 -150 80 85 0 20 40 60 Ambient temperature, C -40 AQV227N 9. Off state leakage current 10 -1 50mA 30mA 20mA 10mA 5mA 0 -40 -20 0 AQV224N 10-6 150 1.5 1.0 2 0 20 40 60 80 85 Ambient temperature, C 8. Current vs. voltage characteristics of output at MOS portion 1.1 3 1 7. LED dropout voltage vs. ambient temperature characteristics 1.2 4 AQV224N Off state leakage current, A LED operate current, mA Turn off time, ms 0.5 -9 AQV224N AQV227N -12 0 100 200 300 Load voltage, V 400 10. Turn on time vs. LED forward current characteristics 11. Turn off time vs. LED forward current characteristics 12. Output capacitance vs. applied voltage characteristics Sample: AQV227N, AQV224N; Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Sample: AQV227N, AQV224N; Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F Measured portion: between terminals 4 and 6; Frequency: 1 MHz, 30 mVrms; Ambient temperature: 25C 77F 1.4 0.22 Turn on time, ms Turn on time, ms 1.0 0.8 0.6 0.18 0.14 AQV224N 0.10 AQV227N 0.4 0.06 AQV224N AQV227N 0.2 0 Output capacitance, pF 12 1.2 0 10 0 20 30 40 50 60 LED forward current, mA 10 8 6 4 AQV227N 2 0 10 20 30 40 50 60 LED forward current, mA 13. Isolation characteristics (50 impedance) 14. Insertion loss characteristics (50 impedance) Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F 0 AQV224N 0 20 40 60 80 100 Applied voltage, V 6 5 Insertion loss, dB Isolation, dB 100 80 60 AQV224N 40 3 AQV227N 2 AQV227N 20 0 AQV224N 4 1 10 4 105 106 Frequency, HZ ds_x615_en_aqv22n: 181206J 107 0 10 4 105 106 Frequency, HZ 107 3