JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13003 TRANSISTOR ( NPN )
FEATURES
· power switching applications
MAXIMUM RATINGS* TA=25 unless otherwise noted ℃
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 2 W
TJ, Tstg Junction and Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 1000uA, IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO I
E= 1mA, I
C=0 9 V
Collector cut-off current I
CBO V
CB= 700V , IE=0 1000 µA
Collector cut-off current I
CEO V
CE= 400V, B=0 500 µA
Emitter cut-off current I
EBO V
EB= 9 V, IC=0 1000 µA
hFE（1） VCE= 5 V, IC= 0.5 A 8 40
DC current gain hFE（2） VCE= 5 V, IC= 1.5A 5
Collector-emitter saturation voltage VCE(sat) IC=1000mA,IB= 250 mA 1 V
Base-emitter saturation voltage VBE(sat) IC=1000mA, IB= 250mA 1.2 V
Base-emitter voltage VBE I
E= 2000 mA 3 V
Transition frequency fT VCE=10V,Ic=100mA
f =1MHz 5 MHz
Fall time tf 0.5 µs
Storage time ts
IC=1A, IB1=-IB2=0.2A
VCC=100V 2.5 µs
CLASSIFICATION OF hFE (1)
Rank
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40
1 2 3
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
Typical Characteristics 3DD13003
