e5C D MM 8235605 0004363 T MMSIEG . PNP Silicon Epibase Transistors . 7-33-77 BD612 . BD 614 SIEMENS AKTIENGESELLSCHAF 94383 dD BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driver stages as wel! as for general AF applications. Their complementary types are the NPN transistors BD 611, BD 613, BD 615, BD 617, and BD 619. Type | Ordering code Type Ordering code BD 612 Q62702-D947 BD 612/BD 611 pair. | Q62702-D1 103 BD 614 Q62702-D949 BD 614/BD 613 pair. | Q62702-D1104 BD 616 Q62702-D951 BD 616/BD 615 pair. | Q62702-D1105 BD 618 Q62702-D953 BD 618/BD 617 pair. | 062702-D1106 BD 620 Q62702-D955 BD 620/BD 619 pair. | Q62702-D1107 4. Ef | tah - re . tars + $ ats 7 5 = % se Te 201 0, 43,2201 ] 65201 je heed Available upon request also with bent fixing plate. Approx. weight 15 g Dimensions in mm Maximum ratings BD 612| BD 614| BD 616| BD 6181 BD 620 Collector-emitter voltage Veep | 22 32 45 60 80 Vv Collector-emitter voltage Veesg | 22 32 45 60 80 Vv Collector-base voltage Vepo | 22 32 45 60 80 Vv Emitter-base voltage -Veso | 5 5 5 5 5 Vv Collector current Ic 4 4 4 4 4 A Collector peak current (t < 11 ms} loy | 7 7 7 7 7 A Emitter peak current : (t $10 ms) ~leny 7 7 7 7 7 A Base current . -Ig 1 i 1 1 1 A Junction temperature Tj 150 150 150 150 150 c Storage temperature range = Tastg -55 to +150 C Total power dissipation - (Tease $ 25 C: Vee S$ 12V) = Page S| 15 Its lis [15 |15 Ww Thermal resistance - 4 Junction to ambient air Rina |62,5 |562,5 | 62.5 | 928 $62,5 | Kay Junction to mounting area Ruse 198,38 |188,3 [$83 [58,3 158,33 I|K/W fi ' 429 1806 c-09 a ff @ -,.e5C D MM 6235605 0004364 1 MESIEG sy T7177 | 25C 04384 BD 612 BD 614 SIEMENS AKTIENGESELLSCHAF BD 616 BD 618 BD 620 Static characteristics (Toacq = 25C) BD 612 | BD 614 | BD G16 | BD 618 | BD 620 Collector-emitter breakdown . voltage (-Jc = 100 mA) Visr)ceo! >22 >32 >45 >60 >80 Vv Coilector-emitter breakdown voltage (-Ic = 100 pA) ~Vierices >22 |? 32 >45 >60 >80 Vv Coilector-base breakdown . voltage (Jg = 100 pA) Visricac| > 22 >32 >45 >60 >80 Vv Emitter-base breakdown voltage (Jg = 1 mA) Viprjeno!} >5 >5 >5 >5 >5 Vv Collector cutoff current (-Voeg = 22 V) Igso | <100 | - - - - vA Collector cutoff current {-Vog = 32 V) Icseo | - <100 | - - > pA Collector cutoff current (~Veg = 45 V) Icpo - - <100 - - pA Collector cutoff current (-Vop = 60 V) ~Icao - - - <100 - pA Collector cutoff current (-Veg = 80 V) Icag - - ~f= - <100 [BA Collector cutoff current (-Voa = 10 V; Tamb = 150C} lego <1 <1 <1 <1 <1 mA Collector cutoff current (Ves =Vepmax? Tamb =180C)Jcno <3 <3 <3 <3 <3 mA Base-emitter forward voltage (~Ip = 2A; -Vee = 1 V) Vee <1. <1.1 <1.2 <1.5 <1.5 V Base-emitter forward voltage (-Ip = 3A; -Vcg = 1V) Vee - - <1.3 <1.6 <1.6 Collector-emitter saturation . voltage (~Ig = 2 A)Y) Veesat | <O.8 | <0.8 | - - - Collector-emitter saturation voltage (-Ip = 2A; Ip = 0.2 A) Vetsat | <0.5 <0.5 1<0.6 <0.8 <0.8 Vv Collector-emitter saturation - voltage (-Ig = 3A; -Ig = 0.3 A) Veesat | - - <0.7 <0.9 <0.9 Vv DC current gain (Jo = 10 MA; -Voe =5V) he >40 >40 >30 >20 >15 - (~J = 500 mA; Vcg = 1 V2) hee >85 >85 >85 >40 >40 - (-Ie = 2 A; -Vee = 1 V) hee >50 >50 >40 >25 >156 - 1) For the characteristic which passes through the point Ig = 2,2 Aand Voce = 1V at constant base current. 2) Available as matching pairs with BO 611, BD 613, BD 615, 8D 617, and BD 619, Condition for matching pairs AFEI/hEE2 s 1.41, 430 1807 c-10 | Bes. e ee ee ee* 25C D MM 8235605 0004385 3 MESIEG 7 33_/7 25C 04385 Dd. BD 612 BD 614 ~SIEMENS AKTIENGESELLSCHAF gp616 BD 618 BD 620 Dynamic characteristics (Tjagg = 25C) | BD 612 | BD 614 | BD 6I6 | BD 618 | BD 620| Transition frequency (-Je = 0.25 A; -Veg = 1V; f= 1 MHz) fr >3 >3 >3 >3 >3 MHz Cutoff frequency in common emitter configuration (~I = 0.25 A; -Voe= 1) fhite >20 >20 >20 >20 >20 kHz 1808 C-11 - 431e5 D MM 8235605 n00438b MASIEG | 723 3-19 29 U4I86 SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature W Prot =A Vee =O to 12 V 20 10 0. % 00 150C , T Permisaible oparating range Ig =f (eel: TeaseS 25C; D = 0 BD 612, BD 614, BD 616 40 le | 10 wW 220 1 625 7. o 15 10? 40! 10 10! 10 V >- Ve 432 - 1809 C~-12 BD 612 BD 614 BD 616 BD 618 BD 620 Permissible pulse load FthsG= # (c) thu 0! t =t o=4 T 10? 1 103 10% 107 102 wt 10 diols rT Pernissibte operating range Io =f (Vee): Tease $ 26C: D =O 7 BD 618, BD 620 Te lw W 270 we 65 37 15 aot we o - 10 40! 107 V Vee Mae ek athe