MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G Darlington Transistors PNP Silicon http://onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236) CASE 318 STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector -Emitter Voltage VCES -30 Vdc Collector -Base Voltage VCBO -30 Vdc Emitter -Base Voltage VEBO -10 Vdc IC -500 mAdc Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous BASE 1 EMITTER 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD RqJA 2x M G G 1 2x PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M G = Device Code x = U for MMBTA63LT1G x = V for MMBTA64LT1G SMMBTA64LT1G = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBTA63LT1G SOT-23 3,000 / Tape & Reel (Pb-Free) MMBTA64LT1G SOT-23 3,000 / Tape & Reel (Pb-Free) SMMBTA64LT1G SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 5 1 Publication Order Number: MMBTA63LT1/D MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -30 - - -100 - -100 Unit OFF CHARACTERISTICS V(BR)CEO Collector -Emitter Breakdown Voltage (IC = -100 mAdc) Collector Cutoff Current (VCB = -30 Vdc) ICBO Emitter Cutoff Current (VEB = -10 Vdc) IEBO Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mAdc, VCE = -5.0 Vdc) MMBTA63 (IC = -10 mAdc, VCE = -5.0 Vdc) MMBTA64, SMMBTA64 (IC = -100 mAdc, VCE = -5.0 Vdc) MMBTA63 (IC = -100 mAdc, VCE = -5.0 Vdc) MMBTA64, SMMBTA64 hFE Collector -Emitter Saturation Voltage (IC = -100 mAdc, IB = -0.1 mAdc) VCE(sat) Base - Emitter On Voltage (IC = -100 mAdc, VCE = -5.0 Vdc) VBE(on) - 5,000 - 10,000 - 10,000 - 20,000 - - -1.5 - -2.0 125 - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT Current -Gain - Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 MHz MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125C 100 70 50 -10 V 30 25C VCE = -2.0 V -5.0 V 20 10 7.0 5.0 -55C 3.0 2.0 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain -2.0 TA = 25C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) -1.6 -1.2 VBE(on) @ VCE = -5.0 V -0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 -0.4 0 -0.3 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 IC, COLLECTOR CURRENT (mA) -100 -200 -300 -2.0 TA = 25C -1.8 -1.6 IC = -10 mA -50 mA -100 mA -175 mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.1-0.2 -0.5 -1 -2 Figure 3. "On" Voltage 1 VCE = -5.0 V f = 100 MHz TA = 25C IC, COLLECTOR CURRENT (A) |h FE |, HIGH FREQUENCY CURRENT GAIN -5 -10 -20 -50 -100-200-500 -1K-2K -5K-10K IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 10 4.0 3.0 2.0 -300 mA 1.0 0.4 0.2 0.1 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 10 ms 0.1 100 ms 1s 0.01 Thermal Limit Single Pulse Test @ TA = 25C 0.001 0.01 -1K 1 ms IC, COLLECTOR CURRENT (mA) 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 4. High Frequency Current Gain Figure 5. Safe Operating Area http://onsemi.com 3 100 MMBTA63LT1G, MMBTA64LT1G, SMMBTA64LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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