DS30367 Rev. 2 - 2 1 of 3 MMBTA28
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MMBTA28
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
·Epitaxial Planar Die Construction
·Ideal for Medium Power Amplification and
Switching
·High Current Gain
Characteristic Symbol MMBTA28 Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 12 V
Collector Current - Continuous IC500 mA
Power Dissipation Pd300 mW
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
TOP VIEW
M
BC
H
G
D
D
K
C
BE
Mechanical Data
·Case: SOT-23, Molded Plastic
·Case Material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking (See Page 2): K6R
·Weight: 0.008 grams (approx.)
·Ordering & Date Code Information: See Page 2
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO 80 ¾VIC= 100mAI
E = 0
Emitter-Base Breakdown Voltage V(BR)EBO 12 ¾VIE= 100mAI
C = 0
Collector-Emitter Breakdown Voltage V(BR)CEO 80 ¾VIC= 100mAI
B = 0
Collector Cutoff Current ICBO ¾100 nA VCB = 60V, IE= 0
Emitter Cutoff Current IEBO ¾100 nA VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE 10,000
10,000 ¾¾
IC = 10mA, VCE = 5.0V
IC = 100mA, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT) ¾1.5 V IC = 100mA, IB = 100mA
Base- Emitter Saturation Voltage VBE(SAT) ¾2.0 V IC = 100mA, VCE = 5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 8.0 Typical pF VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 15 Typical pF VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT125 ¾MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 nch pad layout as shown on Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
TCUDORPWEN
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
C
BE
DS30367 Rev. 2 - 2 2 of 3 MMBTA28
www.diodes.com
Ordering Information (Note 3)
Device Packaging Shipping
MMBTA28-7 SOT-23 3000/Tape & Reel
Marking Information
Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K6R = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K6R
YM
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
TCUDORPWEN
Year 2002 2003 2004 2005 2006 2007 2008 2009
Code NPR
STUVW
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
.
1
110 100 1000
V , COLLECTOR-EMITTER SATURATION
CE(SAT)
VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
T = 150°C
A
T = -50°C
A
T = 25°C
A
IC
IB
= 1000
DS30367 Rev. 2 - 2 3 of 3 MMBTA28
www.diodes.com
TCUDORPWEN
1 10 100 1000
100
1000
10000
100000
10000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical DC Current Gain
vs. Collector Current
h , DC CURRENT GAIN (NORMALIZED)
FE
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
0.4
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1
.
6
0.1 110 100
V , BASE-EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical Base-Emitter Voltage
vs. Collector Current
T = 150°C
A
T = 25°C
A
V = 5V
CE
T = -50°C
A
110 100
1
10
100
1000
COLLECTOR CURRENT I (mA)
C
Fig. 5 Typical Gain Bandwidth Product
vs. Collector Current
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V = 5V
CE
