SOT89 NPN SILICON PLANAR DARLINGTON TRANSISTOR ISSUE 3 - JANUARY 1996 F * * PARTMAKING DETAIL AS3 EATURES Fast Switching High hp, ABSOLUTE MAXIMUM RATINGS. BST52 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Vero 90 Vv Collector-Emitter Voltage Vceo 80 v Emitter-Base Voltage Veo 10 v Pea Pulse Current lon 1.5 A Continuous Collector Current le 500 mA Base Current lp 100 mA Power Dissipation at T,=25C Prot 1 Ww Operating and Storage Temperature Range Tj-T stg -65 to +150 c ELECTRICAL CHARACTERISTICS (at Tamp = 25C unless otherwise stated). PARAMETER SYMBOL | MIN. MAX. UNIT CONDITIONS. Collector-Base Viericeo 90 Vv Ic=10pA, Ie=0 Breakdown Voltage Coilector-Emitter Vipmrceo | 80 V Ip=10mA, 1p=0* Breakdown Voltage Emitter-Base VieREBO 10 Vv Ip=10pLA, Ip=0 Breakdown Voitage Emitter Cut-Off Current leBo 10 pA Vege8V, Ie=0 Collector-Emitter Ices 10 pA Vcp=80V, |p=0 Cut-Off Current Collector-Emitter Vce(sat) 1.3 Vv I-=500mA, |p=0.5mA Saturation Voltage 1.3 Vv I-=500mA, Ip=0.5mMA Tj=150C Base-Emitter Vee (sat) 1.9 Vv \<=500mA, ig=0.5mMA Saturation Voltage Static Forward Current Hee 1K Ic=150mA, Vcp=10V* Transfer Ratio 2K Ip=-500MA, Veg=-10V* Turn On Time ton 400 Typical ns ic=500mA Turn Off Time torr 1.5K Typical | ns lor 'Bort0.5mA * Measured under pulsed conditions. Pulse width=300us. Duty cycle < 2% ice parameter data is available upon re or tybical characteristics graphs see FM P est for this device 614 datasheet. 3-80