TLP2631
2017-08-21
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TOSHIBA photocoupler GaAℓAs IRed & Photo IC
TLP2631
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer-Peripheral Int erface
Microprocessor System Interface
Digital Isolation for A / D, D / A Conver s io n
The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAℓAs
light emitting diode and integrated high gain, high speed photodetector.
This unit is 8-lead DIP.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000 V/μs.
• Input current threshold: IF = 5 mA (max)
• Switching speed: 10MBd (typ.)
• Common mode transient immunity: ±1000 V/μs (min)
• Guaranteed performance over temperature: 0 to 70°C
• Isolation voltage: 2500 Vrms (min)
• UL recognized: UL1577, file no. E67349
• cUL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Truth Table (positive logic)
Input Output
H L
L H
Schematic
A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5(see Note 1).
Pin Configuration (top view )
VCC
1
2
3
4
GND
8
7
6
5
1 : Anode 1
2 : Cathode 1
3 : Cathode 2
4 : Anode 2
5 : GND
6 : VO2 (Output 2)
7 : VO1 (Output 1)
8 : VCC
Shield
Unit: mm
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
VF1
VF2
IF1
IF2
ICC
VCC
VO1
VO2
GND
+
−
−
+
1
2
3
4
8
7
6
5
IO1
IO2
Shield
Start of commer cial production
1986-03
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Absolute Maximum Ratings (no derating required up to 70°C)
Characteristic Symbol Rating Unit
LED
Forward current (each channel) IF
20 mA
Pulse forward current (each channel)* IFP 30 mA
Reverse voltage (each channel) VR 5 V
Input power dissipation(each channel) PD 25 mW
Input power dissipation derating (Ta ≥ 70°C)
(each channel) ΔPD/°C -0.45 mW/°C
Detector
Output current (each channel) IO 16 mA
Output voltage (each channel) VO −0.5 to 7 V
Supply voltage
(1 minute maximum) VCC 7 V
Output collector power
dissipation (each channel) PO 40 mW
Output power dissipation derating (Ta ≥ 70°C)
(each channel) ΔPO/°C -0.75 mW/°C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −40 to 85 °C
Lead soldering temperature (10s)** Tsol 260 °C
Isolation voltage
(AC, 1 minute, R.H.≤ 60%, Ta=25°C (Note 3) BVS 2500 Vrms
Note: Using continuously under heav y loads ( e.g. the applic ation of high temperature/current/voltage and the
significant change in temperature, etc. ) may cause this product to decrease in the reliability significant ly even if
the operatin g c onditions (i.e. operating tem perature/c urrent/volt age, etc.) are within the absolut e maximum
ratings and the operating ranges.
Please design the appropriat e reliability upon reviewing the Toshiba Semiconductor Reliabilit y Handbook
(“Handling Pr ecautions”/“Derating C oncept and Methods”) and individual relia bility data (i. e. reliability test
report and estimated failur e rate, etc).
* t ≤ 1 msec duration.
** 2mm belo w seating plane.
Recommended Operating Condi t ions
Characteristic Symbol Min Typ. Max Unit
Input current, low level, each channel IFL 0 ― 250 μA
Input current, high level, each channel IFH 6.3* ― 20 mA
Supply voltage** VCC 4.5 5 5.5 V
Fan out (TTL load, each channel) N ― ― 8
Operating temperature Topr 0 ― 70 °C
Note: Recomm ended operating conditions are given as a des ign guideline to obtain expected performance of the
device. Additionally, each item is an independent gui deline respectively. In developing des igns using th is
product, please confirm specified charac teristics s hown in this document.
* 6.3mA is a gua rd banded value which allows f or at least 20% CTR degradation.
Initial input cur rent thresho l d value is 5.0 mA or less.
** This it em denotes operating ranges, not meaning of recommended operating conditions .
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Electrical Characteristics (Ta = 0 to 70°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ. * Max Unit
Input forward voltage
(each channel) VF IF = 10mA, Ta = 25°C ― 1.65 1.75 V
Input diode temperature
coefficient (each channel) ΔVF / ΔTa IF = 10mA ― −2.0 ― mV / °C
Input reverse breakdown
voltage (each channel) BVR IR = 10μA, Ta = 25°C 5 ― ― V
Input capacitance
(each channel) CT VF = 0V, f = 1MHz ― 45 ― pF
High level output current
(each channel) IOH VCC = 5.5V, VO = 5.5V
IF = 250μA ― 1 250 μA
Low level output voltage
(each channel) VOL VCC = 5.5V, IF = 5mA
IOL(sinking) = 13mA ― 0.4 0.6 V
High level supply current
(both channels) ICCH VCC = 5.5V, IF = 0 mA ― 14 30 mA
Low level supply current
(both channels) ICCL VCC = 5.5V, IF = 10mA ― 24 38 mA
Isolation voltage RS VS = 500V, R.H. ≤ 60% (Note 3) 5×10
10
10
14
― Ω
Capacitance (input−output) CS f = 1MHz (Note 3) ― 0.6 ― pF
Input−input leakage current II−I R.H. ≤ 60%, t = 5s
VI−I = 500V (Note 6) ― 0.005 ― μA
Resistance (input−input) RI−I VI−I = 500V (Note 6) ― 10
11
― Ω
Capacitance (input−input) CI−I f = 1MHz (Note 6) ― 0.25 ― pF
* All typical v alues are at VCC = 5V, Ta = 25°C.
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Switching Characteristics (Ta = 25°C, VCC = 5V)
Characteristic Symbol Test
Circuit
Test Condition Min Typ. Max Unit
Propagation delay time to
low output level tpHL 1 IF = 0→7.5mA, RL = 350Ω
CL = 15pF (each channel) ― 60 75 ns
Propagation delay time to
high output level tpLH 1 IF = 7.5mA→0, RL = 350Ω
CL = 15pF (each channel) ― 60 75 ns
Output rise
time, output
fall time (10 to 90%) tr, tf 1 IF = 0 7.5mA, RL = 350Ω
CL = 15pF (each channel) ― 30 ― ns
Common mode transient
immunity at high output level CMH 2 IF = 0 mA, RL = 350Ω
VCM = 400V,
VO(min.) = 2V
(each channel, Note 4) 1000 10000 ― V / μs
Common mode transient
immunity at low output level CML 2 IF = 7.5mA, RL = 350Ω
VCM = 400V
VO(max.) = 0.8V
(each channel, Note 5)
−1000 −10000 ― V / μs
(Note 1) 2mm below seating plane
(Note 2) The V CC supply voltage to each TLP2631 isolator must be bypassed by a 0.1μF capacitor or larger. T hi s
can be either a c eramic or solid tantalum capacit or with good high frequency characteristic and should be
connected as close as possible to the package VCC and GND pins each device.
(Note 3) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted t ogether, and pins 5, 6, 7 and 8
shorted toget her.
(Note 4) CMH･the maximum tolerable rate of rise of the common mod e v ol tage to ensure t he output will remain in
the high state ( i .e. VOUT > 2.0V).
Measured in vol ts per microsec ond (V / μs).
Volts/ microsecond can be translat ed to sinusoidal voltages:
(p.p.)
CM
V
CM
fMax.
dt
(dVCM)
μsV / ==
Example:
VCM = 319Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified minimum.
(Note 5) CML･the maximum tolerable rate of fall of the common m ode voltage to ensure the outp ut will remain in
the low output state (i.e. VOUT < 0.8V).
Measured in vol ts per microsec ond (V / μs).
(Note 6) Measur ed between pins 1 and 2 shorted together, and pins 3 and 4 shorted tog ether.
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Test Circuit 1. tpHL and tpLH
Test Circuit 2. Transient Immunity and Typical Waveforms
)(
=,
)(
=μs
r
t
320(V)
L
CM
μs
r
t
320(V)
H
CM
* CL is approximately 15pF which includes probe and stray
wiring capacitance.
VCC
1
2
3
4 GND
8
7
6
5
5V
RL
CL
350Ω
100Ω
0.1μF
PW = 10μs
Pulse input
Duty cycle = 1/10
IF Monitor
* CL is approximately 15pF which includes probe and stray
wiring capacitance.
VO Monitor
IF
VO
VOL
1.5V
0.5V
4.5V
5V
tr tf
tpHL tpLH
7.5mA
3.75mA
0mA
VCC
1
2
3
4
GND
8
7
6
5
5V
RL
CL
350Ω
0.1μF
ZO = 50Ω
Pulse generator
VO Monitor
IF
VFF
VCM
A B
+
−
VCM
VO
VOL
5V
0.8V
0V
tr tf
2V
400V
VO
(IF = 0mA)
(IF = 7.5mA)
90%
10%
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IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.01
1.0 2.0
0.1
1
10
1.2 1.4 1.6 1.8
Ta = 25 °C
ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
−1.4
0.1 0.3 1 3 10 30
−1.6
−1.8
−2.0
−2.2
−2.4
−2.6
50
VO – IF
Forward current IF (mA)
Output voltage VO (V)
8
6
4
2
0
0 1 2
3
4
5
6
VCC = 5 V
Ta = 25 °C
RL = 350Ω
1kΩ
4kΩ
IOH – Ta
Ambient temperature Ta (°C)
High level output current IOH (μA)
1 0
3
5
10
30
50
100
10 20 30 40 50 60 70
IF = 250 μA
VCC = 5.5 V
VO = 5.5 V
VO – IF
Forward current IF (mA)
Output voltage VO (V)
8
6
4
2
0
0 1 2
3
4
5
6
10
Ta = 70°C
0°C
VCC = 5 V
RL = 350Ω
RL = 4kΩ
VOL – Ta
Low level output voltage VOL (V)
Ambient temperature Ta (°C)
0.2 0 80 20 40 60
0.3
0.4
0.5
IF = 5 mA
VCC = 5.5 V
VE = 2 V
IOL=16mA
12.8mA
6.4mA
9.6mA
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tpHL, tpLH – IF
Forward current IF (mA)
Propagation delay time
tpHL, tpLH (ns)
120
0
5 19
7 9 11 13 15 17
20
40
60
80
100
RL = 4kΩ
1kΩ
350Ω
350Ω
1kΩ
4kΩ
tpLH
tpLH
tpHL
Ta = 25 °C
VCC = 5 V
tr, tf – Ta
Rise, fall ti me tr, tf (ns)
Ambient temperature Ta (°C)
0 70
20
40
60
80
10 20 30 40 50 60
280
300
320
0
VCC = 5 V
IF = 7.5 mA
RL = 4kΩ
1kΩ
350Ω
350Ω
1kΩ
4kΩ
tf
tf
tf
tr
tpHL, tpLH – Ta
Ambient temperature Ta (°C)
Propagation delay time
tpHL, tpLH (ns)
0 70
120
0
20
40
60
80
100
10 20 30 40 50 60
RL = 4kΩ
1kΩ
350kΩ
1kΩ
4kΩ
tpLH
tpLH
tpHL
350Ω
VCC = 5 V
IF = 7.5 mA
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RESTRICTIONS ON PRODUCT USE
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
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relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
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