CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is Low On-Resistance: 3 produced using high cell density, DMOS technology. These Low Threshold: 2V (typ.) products have been designed to minimize on-state Low Input Capacitance: 25pF resistance while provide rugged, reliable, and fast switching Fast Switching Speed: 7.5ns performance. This product is particularly suited for low Low Input and Output Leakage voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002E SOT-23 CMT2N7002EG* *Note: G : Suffix for Pb Free Product SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0M) VDGR 60 V Continuous Drain Current (TJ = 150) TA = 25 TA = 70 ID 240 190 mA Pulsed Drain Current (Note 1) IDM 1300 mA Gate-to-Source Voltage VGS 20 V TA = 25 Total Power Dissipation TA = 70 PD 0.35 0.22 W Operating and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Resistance Junction to Ambient JA 357 /W Note1: Pulse Width limited by maximum junction temperature. 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 1 CMT2N7002E SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT2N7002E Characteristic Drain-Source Breakdown Voltage Symbol Min Typ V(BR)DSS 60 68 Max Units V (VGS = 0 V, ID = 10 A) Zero Gate Voltage Drain Current IDSS (VDS = 60 V, VGS = 0 V) 1.0 A (VDS = 60 V, VGS = 0 V, TC = 125) 500 A 10 nA 2.5 V Gate Body Leakage (VDS = 0 V, VGS = 15 V) IGSS VGS(th) Gate Threshold Voltage * 1.0 2.0 (VDS = 7.5 V, VGS = 10V) 800 1900 (VDS = 10 V, VGS = 4.5V) 350 450 (VDS = VGS, ID = 250 A) On-State Drain Current (Note 2) Id(on) Static Drain-Source On-Resistance (Note 2) mA RDS(on) (VGS = 10 V, ID = 0.25A) 1.9 3 (VGS = 4.5 V, ID = 0.2A) 3.5 4 0.85 1.2 V Diode Forward On-Voltage (IS = 200 mA, VGS = 0V) VSD Forward Transconductance (VDS = 15 V, ID = 200mA) (Note 2) gFS Total Gate Charge Qg 0.4 Qgs 0.06 nC nC (VDS = 25 V, VGS = 0 V, Gate-Source Charge f = 1.0 MHz) (Note 1) Gate-Drain Charge Input Capacitance (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) (Note 1) Reverse Transfer Capacitance 150 260 mmhos 0.6 Qgd 0.06 nC Ciss 21 Coss 7 pF pF pF Crss 2.5 Turn-On Delay Time (Note 1,3) (VDD = 10 V, ID = 250 mA, td(on) 13 20 Turn-Off Delay Time (Note 1,3) VGEN = 10 V, RG = 10, RL = 40) td(off) 18 25 ns ns Note 1: For Design Aid Only, not subject to production testing. Note 2: Pulse test: PW <= 300s duty cycle <=2% Note 3: Switching time is essentially independent of operating temperature. 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 2 CMT2N7002E SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 3 CMT2N7002E SMALL SIGNAL MOSFET 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 4 CMT2N7002E SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 D 3 b1 With Plating A c c1 A1 E1 E A2 b b Base Metal b1 c Section B-B c1 D E 1 2 e E1 L b e1 L1 e 1 e1 1 A2 A 2 2 A1 L 2004/11/05 Preliminary Rev. 2 See Section B-B L1 Champion Microelectronic Corporation Page 5 CMT2N7002E SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2004/11/05 Preliminary T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Rev. 2 Champion Microelectronic Corporation Page 6