©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP30 Series(TIP30/30A/30B/30C)
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO
Collector-Base Voltage : TIP30
: TIP30 A
: TIP30 B
: TIP30 C
- 40
- 60
- 80
- 100
V
V
V
V
VCEO Collector-Emitter Voltage : TIP30
: TIP30 A
: TIP30 B
: TIP30 C
- 40
- 60
- 80
- 100
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 1 A
ICP Collector Current (Pulse) - 3 A
IB Base Current - 0.4 A
PC Collector Dissipation (TC=25°C) 30 W
PC Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP30
: TIP30A
: TIP30B
: TIP30C
IC = -30mA, IB = 0
-40
-60
-80
-100
V
V
V
V
ICEO Collector Cut-off Current
: TIP30/30A
: TIP30B/30C VCE = -30V, IB = 0
VCE = -60V, IB = 0 -0.3
-0.3 mA
mA
ICES Collector Cut-off Current : TIP30
: TIP30A
: TIP30B
: TIP30C
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-200
-200
-200
-200
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -1.0 mA
hFE * DC Current Gain VCE = -4V,IC = -0.2A
VCE = -4V, IC = -1A 40
15 75
VCE(sat) * Collector-Emitter Saturation Voltage IC = -1A, IB = -125mA -0.7 V
VBE(sat) * Base-Emitter Satur ation Voltage VCE = -4V, IC = -1A -1.3 V
fT Current Gain Bandwidth Product VCE = -10V, IC = -200mA 3.0 MHz
TIP30 Series(TIP30/30A/30B/30C)
Medium Power Linear Switching Applications
• Complementary to TIP29/29A/29B /29C
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
TIP30 Series(TIP30/30A/30B/30C)
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE = -4V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
-10
-100
-1000
-10000 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV ], SAT UR A TI O N VOL TA G E
IC[mA], COLLECTOR CURRENT
-10 -100
-0.1
-1
-10
DC
TIP30C VCEO MAX.
TIP30B VCEO MAX.
TIP30A VCEO MAX.
TIP30 VCEO MAX.
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP30 Series(TIP30/30A/30B/30C)
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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As used herein:
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when properly used in accordance with instructions for use
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result in significant injury to the user.
2. A critical component is any component of a life support
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reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
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