© Semiconductor Components Industries, LLC, 2015
November, 2017 − Rev. 10 1Publication Order Number:
BAV99WT1/D
BAV99W, BAV99RW
SC-70/SOT-323 Dual Series
Switching Diodes
The BAV99WT1G is a smaller package, equivalent to the
BAV99LT1G.
Features
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Suggested Applications
•ESD Protection
•Polarity Reversal Protection
•Data Line Protection
•Inductive Load Protection
•Steering Logic
MAXIMUM RATINGS (Each Diode)
Rating Symbol Value Unit
Reverse Voltage VR100 Vdc
Forward Current IF215 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
Repetitive Peak Reverse Voltage VRRM 100 V
Average Rectified Forward Current
(Note 1)
(averaged over any 20 ms period)
IF(AV) 715 mA
Repetitive Peak Forward Current IFRM 450 mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM 2.0
1.0
0.5
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 0.75 0.062 in.
Device Package Shipping†
ORDERING INFORMATION
BAV99RWT1
SC−70, CASE 419, STYLE 10
BAV99WT1
SC−70, CASE 419, STYLE 9
3
CATHODE/ANODE
ANODE
1
CATHODE
2
12
3
CATHODE/ANODE
CATHODE ANODE
MARKING DIAGRAM
SC−70
CASE 419
BAV99RWT1G SC−70
(Pb−Free) 3,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAV99WT1G SC−70
(Pb−Free) 3,000 / Tape & Reel
www.onsemi.com
SBAV99WT1G SC−70
(Pb−Free) 3,000 / Tape & Reel
SBAV99RWT1G SC−70
(Pb−Free) 3,000 / Tape & Reel
X7 MG
G
A7 = BAV99W
F7 = BAV99RW
M = Date Code
G= Pb−Free Package
1
NSVBAV99WT3G SC−70
(Pb−Free) 10,000 / Tape & Ree
l
BAV99W, BAV99RW
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°CPD200
1.6 mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 625 °C/W
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°CPD300
2.4 mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mA) V(BR) 100 − Vdc
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR−
−
−
1.0
30
50
mAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz) CD− 1.5 pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time
(IF = IR = 10 m Adc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 Wtrr − 6.0 ns
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) VFR − 1.75 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: (c) tp » trr
+10 V 2 k
820 W
0.1 mF
DUT
VR
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV99W, BAV99RW
www.onsemi.com
3
CURVES APPLICABLE TO EACH DIODE
IR, REVERSE CURRENT (A)μ
1000
0.0 0.2
VF, FORWARD VOLTAGE (VOLTS)
0.4 0.6 0.8 1.2
10
1.0
0.1
TA = 150°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 10 20 30 40 50
0.68
0
VR, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
CD, DIODE CAPACITANCE (pF)
246 8
IF, FORWARD CURRENT (mA)
TA = 25°CTA = -55°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
100
1.0
SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 1:
CANCELLED
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
XX MG
G
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
GENERIC
MARKING DIAGRAM
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42819B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SC−70 (SOT−323)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
