Datasheet
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Switching Diode
IMN10
Application Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra hig h speed switching
Features
1) Small mold type. (SMD6)
2) High r eliability.
Structure
Construction Taping specifications (Unit : mm)
Silicon epitaxial planar
Absolute maximum rati ngs ( Ta= 25°C) Symbol Unit
Reverse voltage (repetitive peak) V
RM
V
Reverse voltage ( DC) V
R
V
Forward current (Single) I
FM
mA
Forward current (Double) I
FM
mA
Average rectified f or ward curr ent (single) Io mA
Surge current (t=1s) I
surge
A
Power dissipation (TO TAL)(*1) Pd mW
Junction temperat ur e Tj °C
Storag e t em per at ure Tstg °C
(*1) Not exceed 200mW per element.
Symbol Min. Typ. Max. Unit
Forward voltage V
F
--1.2V
I
F
=100mA
Reverse current I
R
--0.1
AV
R
=70V
Capacitance between terminals Ct - - 3.5 pF V
R
=6V, f=1MHz
Reverse recovery time trr - - 4 ns
Parameter Limits
V
R
=6V, I
F
=5mA,RL=50
Parameter Conditions
55 to 150
Electrical charact eri st i cs ( Ta = 25°C)
80
80
100
4
150
450
300
300
0.8MIN.
19
2.4
1.0MIN.
0.45 0.35
0.95 0.95
0.450.35
0.6
week code
ROHM : SMD6
JEITA : SC-74
JEDEC : S0T-457 1Pin Mark
SMD6
2.9±0.2
2.8±0.2
1.9±0.2
1.6 ＋0.2
－0.1
0.95 0.95
各リードとも同寸法
0～0.1
(3)
(5)
(1)
(4)
(2)
(6)
0.3～0.6
0.15±0.1
0.06
1.1±0.2
0.1
0.8±0.1
0.3±0.1
0.05
Each lead has same dimension
Anode
Cathode
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.55±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.05MIN
3.2±0.1
1.35±0.1
3.2±0.1
0.3±0.1
5.5±0.20～0.5
1/3 2013.02 - Rev.D
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© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
IMN10
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta = 75°C
Ta = 25°C
Ta = 125°C
Ta = 25°C
Ta = 150°C
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta = 75°C
Ta = 25°C
Ta = 25°C
Ta = 125°CTa = 150°C
0.1
1
10
0 5 10 15 20
f= 1MHz
900
910
920
930
940
950
AVE : 921.7 mV
Ta=25°C
IF=100mA
n=30pcs
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE : 1.040pF
Ta=25°C
f=1MHz
VR=6V
n=10pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25°C
VR=80V
n=10pcs
AVE : 9.655 nA
FORWARD VOLTAGE : VF(mV)
VF-IFCHARACTERISTICS REVERSE VOLT AGE : VR(V)
VR-IRCHARACTERISTICS
REVERSE CURRENT : IR(nA)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF )
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VFDISPERSION MAP
REVERSE CURRENT : IR(nA)
IRDISPERSION MAP
Ct DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS : Ct(pF )
FORWARD CURRENT : IF(mA)
2/3
2013.01 - Rev.D
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
Data Sheet
IMN10
0
1
2
3
4
5
6
7
8
9
10
AVE : 1.93n s
Ta=25°C
VR=6V
IF=5mA
RL=50
n=10pcs
0
5
10
15
20
AVE : 3.50A
0
1
2
3
4
5
110100 1
10
100
0.1 1 10 100
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
0
1
2
3
4
5
6
7
8
9
10
AVE : 0.97kV
AVE : 2.54kV
IFSM DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
TIME : t(ms)
IFSM-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE : Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT : IFSM(A)
1cyc.
8.3ms
IFSM 8.3ms
trr DISPERSION MAP
RESERVE RECOVERY TI ME : trr(ns)
8.3ms
IFSM
1cyc.
IFSM time
1ms
IM=10mA IF=100mA
300s
time
Mounted on epoxy board
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
C=100pF
R=1.5k
C=200pF
R=0
3/3
2013.02 - Rev.D
R1102
A
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© 2013 ROHM Co., Ltd. All rights reserved.
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