CMOS DIGITAL INTEGRATED CIRCUIT cer! eA PRELIMINARY DATA TC74HC75P = 4-BIT =D-TYPE LATCH The TC74HC75 is a high speed CMOS 4-BIT D-TYPE LATCH fabricated with silicon gate TENTATIVE C2M0S technology. It achieves the high speed operation similar to equivalent LS TTL while maintaining the CMOS low power dissipation, It contains two groups of 2-bit latches controled by a enable input (Gl+2 or G3+4). And those two latch groups can be used in the different circuits. Each latch has Q and Q outputs (1Q thru 4Q and 1Q thru 40). The data applied to the data input is transfered to the Q and Q outputs when the enable input is taken high and the outputs will follow the data input as long as the enable input is kept high. When the enable input is taken low, the information data applied to the data input at a time is retained at the outputs. All inputs are equipped with protection circuits against static discharge or transient excess voltage. FEATURES: a High Speed. ...secceceeeseevee tpa=l6ns (Typ. ) at Vcoc=5V 16 4 Low Power Dissipation........ Iec=2#A(Max.) at Ta=25C 1 High Noise [mmunity.......... VNTH=VHIL=28% Vcc (Min.) pIP (5-22E) Output Drive Capability...... 10 LSTTL Loads Symmetrical Output Impedance..|lIou}=loL=4mA PIN ASSIGNMENT Balanced Propagation Delays... tpLH==tpHL Wide Operating Voltage Range..Vcc(opr)=2V ~ 6V Pin and Function Compatible with 74LS75 TRUTH TABLE INPUTS OUTPUTS FUNCTION (Top View) X : Don't care 105TC74HC75P LOGIC DIAGRAM Ba en >o-f>2= 2Q INPUT and OUTPUT EQUIVALENT CIRCUIT Vag Yoo qT; i) ' INPUT 7 -- $-4+_ OUTPUT 1 aNnD - 4 GND 106 acine ee Be S 14 og Bp P 4 ag ae Voo 15, @ND:12 By ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT | 500mW in the range of . Ta=-40C~ 65C. Supply Voltage Ran vi -0.5~7 Vv ppry woir3e Be | Voc and from Ta=65C up ta [BC Input Voltage VIN -0.5~ Voct0.5 Vv 85C derating factor RPM EBS EN DC Output Voltage VouT ~0.5~Vect0.5 of ~10raW/ shall be po applied until 300mW. Input Diade Current LIK +20 mA Output Diode Current TOK +20 mA DG Output Current [ouT 25 mA E Vcce/Ground Current | tcc +50 mA Power Dissipation PD 500% mW Storage Temperature Tste -65 ~ 150 C Lead Temperature 10sec TL 300 C) TC7A4HC75t RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL LIMIT UNIT Supply Voltage Vec 2~6 V Input Voltage VIN O~Vcc Vv Output Voltage VoUT 0~Vcc Vv Operating Temperature Topr ~40~ 85 C 0~1000 (Wec=2.0V) Input Rise and Fall Time tr,tf {O~500 (Wec=4.5V) ns 0~400 (Vcc=6.0V) OC ELECTRICAL CHARACTERISTICS Ta=25C Ta=-40~85C PARAMETER SYMBOL TEST CONDITION UNIT Voc MIN. | TYP. | MAX. | MIN. | MAX. 2.0 1.5 - - 1.5 - High-Level z 2 . 3. - - el - Vv Input Voltage VIH 4.5 3.15 3.15 6.0 4.2 - - 4.2 - 2.0 - - 0.5 - 0.5 Low-Level . - - L. - . Vv Input Voltage VIL 4.5 35 1.35 6.0 - - 1.8 - 1.8 2.0 1.9 2.0 - 1.9 - VINe Igy=-20#A 4.5 4.4 4.5 - 4.4 - High-Level IN* . - . - . - Vv Output Voltage Vou VIH Or VIL 6.0 3.9 6.0 3.9 Top=-4mA 4.5 4.18] 4.31 - 4.13 - Ion=-5.2mA | 6.0 5.68} 5.80 - 5.63 - 2.0 - 0.0 0.1 - 0.1 _ I9gL=20#A 4.5 - 0.0 0.1 - 0.1 Low-Level vo. | 6.0 | - | oof oa} - | of ov Output Voltage OL ly tH Or Vin - . Lo L=4mA 4.5 - 0.17] 0.32 - 0.37 I9pL=5. 2mA 6.0 - 0.18] 0.32 - 0.37 Input Leakage _ _ . + _ + Current LIN VIN=Vcc or GND 6.0 +0.1 +1.0 aA Quiescent Vege _ _ _ Supply Current Icc | Vin=Vec or GND 6.0 2.0 20.0 107TC74HC75P AC ELECTRICAL CHARACTERISTICS (Cy=50pF, Input ty=t=6ns) Ta=25C Ta=-40-85C PARAMETER SYMBOL | TEST CONDITION T UNIT Veco | MIN. | TYP. | MAX. | MIN. | Max. trLu 2.0 - 30 75 ~ 90 Output Transition ; 4.5 . 8 15 _ 18 Time CTHL 6.0 - 7 13 ~ 16 | - so [145 | | 175 Propagation Delay Time] tpLH 2-0 60 . = 4.5 - 18 2 ~ (PATA ~ Q, @ t pH. 9 38 6.0 - 16 25 - 1 30 1 oY 2.0 - 75 | 160 | 195 Propagation Delay Time; Cp, . , . = 4.5 - 20 32 - 39 (G@-9, tpEL, ' a 2B ns - Minimum Pulse Width 2.0 30 15 90 (G) tw(H) 4.5 - 8 15 - 18 6.0 - 7 13 - 16 2.0 - 5 50 ~ 60 Minimum Set-up Time ts 4.5 - 2 10 - 12 6.0 - 2 9 - 1} 2.0 - - 25 ~ 30 Minimum Hold Time th 4.5 - ~ 5 - 6 6.0 - - 4 - Input Capacitance Cc ~ 5 10 - 10 pmpul Sapacscance SiN [ _ |. __-}. _-___}. .._-+j pF Power Dissipation cen(l) . 48 _ _ _ Capacitance PD * | Note (1) Cpp is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit). Average operating current can be obtained by the equation hereunder. lec (opr)=Cpp Voc: fin/4 (per Latch) 108\ ) TC74HC75P SWITCHING CHARACTERISTICS TEST WAVEFORM Icc(opr) TEST CIRCUIT p Voo=5V ___. Vou [~ co ( B b0% 50% A) __ I GND te th \ ts th Voo / oN /_ ON Yoo G1+2 qa 50% 50% __/ tw \__/ tw aND Os +4 P.G, 1D 1Q-- ype OT LH =e PTHL f- | Fsox 4 You 5 ar on a 50% h 3b :[E 10% Voy, 4b 4Qr- CoH UpAL LoL tTLH . 30% Vou _ 50% 8 10% | Vou UpHT. t pL Input waveform is the same asp that in case of switching characteristics test. lon CHARACTERISTICS Io, CHARACTERISTICS HIGH LEVEL OUTPUT VOLTAGE Vop-Veo CV) Voc=45V na = 25 5 4 % ~2 1 oO Ta=RSC( typ, Ta=85C (min, Ta=85C (min, ? 7 LOW LEVEL OUTPUT CURRENT i 4 4 5 Voo=45V LOW LEVEJ, OUTPUT VOLTAGE Voy, (V) HIGH LEVEL OUTPUT CURRENT Ta=25C( typ.) 109TC74HC75P ct trLys tTHL-Vcc CHARACTERISTICS (TYP.) LHstpHL-Vcc. CHARACTERISTICS (TYP.) Cy,=50pF Ta=25C Cy=50 pF Ta=25 IME TI tre trHp (ne) tpLy tpyi (ns) & = H BH z 6 % a 4 & & b g a < 8 & be a bE & S p < Pa pu & a 2 ie] o sy 2 4 5 SUPPLY VOLTAGE Vga (Vv) z 8 4 5 6 SUPPLY VOLTAGE Vog (V) CTLH tTHL-CL CHARACTERISTICS (TYP.) tpLH,tpHL-Cy, CHARACTERISTICS (TYP.) Vac=5v ag Vee=8 Ta=25 Ta=25C DELAY TIME z trLy tran (ns) ve =~ a a VY og ees a Pp a, ey z oO Pa e ax a Aa 3 Pa a 50 00 50 190 LOAD CAPACITANCE Cy, (pF) LOAD CAPACITANCE Cy, (pF) 110