fiAMOSPEC PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS ... designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage- Vesorsus, = 50 V (Min) - TIP130, TIP 135 = 80 V (Min) - TIP 131, TIP 136 = 100 V (Min) - TIP 132, TIP 137 * Collector-Emitter Saturation Voltage Ve sat) = Z.0V (Max.) @!, = 4.0A * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS NPN PNP TIP130 TIP135 TIP131 TIP136 TIP132 TIP137 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS fv TO-220 Characteristic Symboj| TIP130 | TIP131 | TIP132 | Unit TIP135 | TIP136 | TIP137 Collector-Emitter Voltage Vceo 60 80 100 Vv COllector-Base Voltage Vero 60 80 100 Vv Emitter-Base Voltage Vepo 5.0 Vv Collector Current-Continuous Ie 8.0 A -Peak low 12 Base Current lg 0.3 mA Total Power Dissipation @T,= 25C Pp 70 WwW Derate above 25C 0.56 wPrc Operating and Storage Junction Ty :Ts7 c Temperature Range - 65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Rejc 1.785 CMW FIGURE -1 POWER DERATING 3 Pp , POWER DISSIPATION(WATTS) 8 8 6 8 8 o? 25 50 75 100 125 150 Te , TEMPERATURE(C) +H FT | rc DIM ro A 123 | yy - Ht Ke 2,COLLECTOR 3.EMITTER MILLIMETERS MIN MAX 9.78 | 10.42 5.01 6.52 3.57 2.42 0.72 4.22 \ Lo J : Lar +r c | G D. | | PIN 1.BASE 4.COLLECTOR(CASE) 14.68 15.31 13.06 1.12 1.14 ORT AC --TOMmMIOD>YTiP130, TIP4131, TIP132 NPN / TIP135, TIP136, TIP137 PNP en cee eee eee eee ence eee ns ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol! Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Veceotsus) Vv (l_g = 30 mA, i, = 0) TIP 130, TIP135 60 TIP 131, TIP136 80 TIP 132, TIP137 400 Collector Cutoff Current logo mA (Ve, = 30 V, 1, =09 ) TIP 130,7iP135 0.5 (Ve, = 40 V, I, = 9 ) TIP 131, TIP136 0.5 (Veg = 50 V, 1, =0 ) TIP 132, TIP 137 0.5 Collector Cutoff Current loso mA ( Veg = 60 V, 1, = 0 ) TIP 130, TIP135 0.2 (Veg = 80 V, I, =9 ) TIP 131, TIP136 0.2 { Veg = 100 V,I, =0 ) TIP 132,TIP137 0.2 Emitter Cutoff Current leno mA ( Veg = 5.0 V,1,= 0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (I, = 1.0A, Veg = 4.0 V) 500 (1, =4.0A, Vop = 4.0V) 1000 15000 Collector-Emitter Saturation Voitage Vog;sat Vv (I, = 4.0 A, Ip = 16 mA) 2.0 (I, =6.0A, I, = 30 mA) 3.0 Base-Emitter On Voltage Vese(on) Vv (1 = 4.0 A, Veg = 4.0 V) 2.5 DYNAMIC CHARACTERISTICS Output Capacitance Cob pF (Veg = 10V, 1, =O , f =0.1 MHz) 250 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% ot eae ae ee oe oe od INTERNAL SCHEMATIC DIAGRAM NPN PNP TIP130 TIP135 TIP131 TIP136 TIP132 TIP137hee , DC CURRENT GAIN VOLTAGE (VOLTS) Vce, COLLECTOR-EMITTER SATURATION Ic , COLLECTOR CURRENT (Amp) 0.1 2: 1 1 0, 0.1 1 2 FIG-2 DC CURRENT GAIN. \ 02 0.5 1.0 2.0 5.0 10 ic , COLLECTOR CURRENT (AMP) FIG-4 COLLECTOR-EMITTER SATURATION VOLTAGE a loflg=100 8 Tex2PC 6 7 4 2 VJ} | LTT | 2 |_| 6 04 02 05 1.0 20 30 50 10 Ic , COLLECTOR CURRENT (AMP) FIG-6 ACTIVE REGION SAFE OPERATING AREA - Bondng Wire Linit Second Breakdown ~- Thermally Limit 1 =28C(Single Puse) 10 20 50 100 200 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) TIP130,TIP131,TIP132 NPN / TIP135, TIP136, TIP137 PNP Oe Vox, BASE-EMITTER VOLTAGE (VOLTS) VF, COMMUTATING DIODE FORWARD VOLTAGE (VOLTS) FIG-3 BAES-EMITTER VOLTAGE 0.4 5.0 0.2 as 1.0 20 3.6 IC , COLLECTOR CURRENT (AMP) 10 FIG-S FORWARD VOLTAGE COMMUTATING DIODE 34 3.0) To#25C 26 22 1.8: 1.4 _, 1.0 08 04 02 05 1.0 20 5.0 40 ik, FORWARD CURRENT (Amp.) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-6 curve is base on T ypig=150 C; Tz is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% provided TP) <150C,At high case temperatures,thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. le-Vee