UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL VALUE UNIT VCBO VCEO VEBO Ic IB PC PC* Tj TSTG -120 -120 -5 -800 -160 500 1000 150 -55 ~ +150 V V V mA mA mW mW C C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature * : Mounted on cermic substrate( 250mm2 x 0.8t ) ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Emitter to Base breakdown voltage Collector cut-off current Emitter cut-off current DC Current Gain Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance UTC SYMBOL TEST CONDITIONS V(BR)CEO Ic= -10mA, IB=0 V(BR)EBO ICBO IEBO hFE VCE(sat) IE= -1mA, IC=0 VCB= -120V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -100mA Ic= -500mA, IB= -50mA VBE fT Cob VCE= -5V, IC= -100mA VCE= -5V, Ic= -100mA VCB= -10V, IE=0, f=1MHz UNISONIC TECHNOLOGIES MIN TYP MAX -120 UNIT V -5 -0.1 -0.1 240 -1.0 80 -1.0 120 30 CO. LTD V A A V V MHz pF 1 QW-R208-024,A UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE RANK RANGE O 80 - 160 Y 120 - 240 TYPICAL PERFORMANCE CHARACTERISTICS IC-VCE -600 -3 -400 -2 IB =-1mA -200 0 0 Collector-emitter Saturation Voltage VCE(sat)(V) -0.5 -8 -12 -4 Collector Emitter Voltage V CE (V) hFE-Ic -0.3 Ta=100 -0.1 -0.05 -0.03 -25 25 -0.01 -3 -3000 -1000 -10 -100 -30 -300 Collector Current IC(A) Ic max.(continuous)* 10ms* 1ms* Collector Current Ic (mA) -300 -100 DC OPERATION -50 Ta=25 -30 100ms* *Single nonrepetitive pulse Ta=25 Curves must be derated -5 linearly with increase in temperature -3 Test without a substrate VCEO MAX -1 -0.3 -1 -3 -10 -30 -100 -300 Collector Emitter Voltage VCE (V) UTC 100 25 -25 50 30 -0.8 -10 -100 -30 -300 Collector Current IC(A) IC-VBE -1000 Common Emitter VCE= -5V I(tot) mA -0.6 Ta=100 -0.4 25 -25 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Base Emitter Voltage VBE (V) Pc-Ta Safe Operation Area -500 -10 Ta=100 300 10 -3 -1000 Ic max.(pulsed)* Common Emitter VCE= -5V I(tot) mA 500 -16 Common Emitter Ic/IB=10 I(tot) mA hFE-Ic 1000 DC Current Gain hFE Common Emitter Ta=25 -5I(tot) -4mA -7 Collector Current Ic(A) -10 Collector Power Dissipatoin Pc,(W) Collector Current Ic(mA) -800 1.2 1.0 1. Mounted on Ceramic Substrate (250mm2*0.8t) I(tot) 2. No heat sink mA 1 0.8 0.6 2 0.4 0.2 0 0 20 80 100 120 140 160 40 60 Ambient Temperature Ta() UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-024,A UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-024,A