UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R208-024,A
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and
voltage amplifier applications.
FEATURES
*High voltage: VCEO= -120V
*High transition frequency: fT=120MHz(typ.)
*Pc=1 to 2 W(mounted on ceramic substrate)
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
Emitter-Base Voltage VEBO -5 V
Collector Current Ic -800 mA
Base Current IB -160 mA
PC 500 mW Collector Power Dissipation
PC* 1000 mW
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
* : Mounted on cermic substrate( 250mm2 × 0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector to emitter breakdown
voltage
V(BR)CEO Ic= -10mA, IB=0 -120 V
Emitter to Base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-off current ICBO VCB= -120V, IE=0 -0.1 µA
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 µA
DC Current Gain hFE VCE= -5V, IC= -100mA 80 240
Collector to emitter saturation
voltage
VCE(sat) Ic= -500mA, IB= -50mA -1.0 V
Base to emitter voltage VBE VCE= -5V, IC= -100mA -1.0 V
Transition frequency fT VCE= -5V, Ic= -100mA 120 MHz
Collector output capacitance Cob VCB= -10V, IE=0, f=1MHz 30 pF
UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R208-024,A
CLASSIFICATION OF hFE
RANK O Y
RANGE 80 - 160 120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
I(tot)
mA
IC-VCE
0-4
0
-12-8 -16
-200
-400
-600
-800
Collector Current Ic(mA)
I(tot)
mA
-10
30
hFE-Ic
-3 -1000
10
Collector Current IC(A)
DC Current Gain hFE
50
100
300
500
Collector Emitter Voltage VCE (V)
IB=-1mA
Common Emitter
Ta=25 ℃
-10 -7
-5
-4
-3
-2
-30 -100 -300
1000
Common Emitter
VCE= -5V
Ta=100℃
-25℃25℃
I(tot)
mA
-10
-0.03
hFE-Ic
-3 -1000
-0.01
Collector Current IC(A)
Collector-emitter Saturation Voltage
VCE(sat)(V)
-0.05
-0.1
-0.3
-30 -100 -300
-0.5
Common Emitter
Ic/IB=10
Ta=100℃
-25℃
25℃
I(tot)
mA
IC-VBE
0-0.2
0-0.6-0.4 -0.8
-0.2
-0.4
-0.6
-0.8
Collector Current Ic(A)
Base Emitter Voltage VBE (V)
-1.0 -1.2
Common Emitter
VCE= -5V
Ta=100℃
25℃-25℃
I(tot)
mA
20
Pc-Ta
040
0
10060 140 160
0.2
0.6
0.8
1.0
Collector Power Dissipatoin Pc,(W)
1. Mounted on Ceramic
Substrate (250mm2*0.8t)
2. No heat sink
80
0.4
Ambient Temperature Ta(℃)
120
1.2
1
2
-30
Safe Operation Area
Collector Current Ic (mA)
-3
-10
-1 -10
-5
-50
-100
Collector Emitter Voltage VCE (V)
-300
-500
-300
-3
-1
-0.3 -30 -100
-1000
-3000 Ic max.(pulsed)*
Ic max.(continuous)* 1ms*
10ms*
100ms*
DC OPERATION
Ta=25℃
*Single nonrepetitive pulse
Ta=25℃
Curves must be derated
linearly with increase
in temperature
Test without a substrate VCEO MAX
UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 3
QW-R208-024,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
