Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage VRRM 1600 V
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip IFRMSM 40 A
Dauergleichstrom
DC forward current TC = 80°C Id 10 A
Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C IFSM 300 A
surge forward current tP = 10 ms, Tvj = 150°C 230 A
Grenzlastintegral tP = 10 ms, Tvj = 25°C I2t 450 A2s
I2t - value tP = 10 ms, Tvj = 150°C 260 A2s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage VCES 1200 V
Kollektor-Dauergleichstrom Tc = 80 °C IC,nom. 10 A
DC-collector current TC = 25 °C IC 20 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC =80 °C ICRM 20 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 100 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current Tc = 80 °C IF 10 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 20 A
Grenzlastintegral
I2t - value VR = 0V, tp = 10ms, Tvj = 125°C I2t 18 A2s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage VCES 1200 V
Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 10 A
DC-collector current TC = 25 °C IC 20 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 20 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 100 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current Tc = 80 °C IF 10 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 20 A
prepared by: Andreas Schulz date of publication:17.09.1999
approved by: M.Hierholzer revision: 5
1(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
forward voltage Tvj = 150°C, IF = 10 A VF- 0,9 0,95 V
Schleusenspannung
threshold voltage Tvj = 150°C V(TO) - - 0,8 V
Ersatzwiderstand
slope resistance Tvj = 150°C rT- - 10,5 mΩ
Sperrstrom
reverse current Tvj = 150°C, VR = 1600 V IR-2-mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RAA’+CC’ - 8 - mΩ
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10 A VCE sat - 2,4 2,85 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10 A - 2,75 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,35 mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 0,6 - nF
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES - 0,5 500 µA
collector-emitter cut-off current VGE = 0V, Tvj =125°C, VCE = 1200 V - 0,8 - mA
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 300 nA
Einschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm td,on -40-ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 45 - ns
Anstiegszeit (induktive Last) IC = INenn, VCC = 600 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm tr-45-ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 40 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, VCC = 600 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm td,off - 255 - ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 285 - ns
Fallzeit (induktive Last) IC = INenn, VCC = 600 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm tf-40-ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 60 - ns
Einschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 82 Ohm Eon - 1,2 - mWs
LS = 75 nH
Abschaltverlustenergie pro Puls IC = INenn, VCC = 600 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 82 Ohm Eoff - 1,1 - mWs
LS = 75 nH
Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 82 Ohm
SC Data Tvj≤125°C, VCC =720 V ISC -45- A
dI/dt = 800 A/µs
2(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values min. typ. max.
Modulinduktivität
stray inductance module LσCE - - 100 nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RCC’+EE’ - 11 - mΩ
Diode Wechselrichter/ Diode Inverter min. typ. max.
Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 10 A VF- 2,2 2,55 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 10 A - 2,1 - V
Rückstromspitze IF=INenn, - diF/dt = 400A/µs
peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 600 V IRM -11- A
VGE = -10V, Tvj = 125°C, VR = 600 V - 13 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 400A/µs
recovered charge VGE = -10V, Tvj = 25°C, VR = 600 V Qr- 0,84 - µAs
VGE = -10V, Tvj = 125°C, VR = 600 V - 1,5 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 400A/µs
reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 600 V ERQ - 0,3 - mWs
VGE = -10V, Tvj = 125°C, VR = 600 V - 0,54 - mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10,0 A VCE sat - 2,4 2,85 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10,0 A - 2,75 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,35mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 0,6 - nF
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V ICES - 0,5 500 µA
collector-emitter cut-off current VGE = 0V, Tvj = 125°C, VCE = 1200 V - 0,8 - mA
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 300 nA
Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.
Durchlaßspannung Tvj = 25°C, IF = 10,0 A VF- 2,2 2,55 V
forward voltage Tvj = 125°C, IF = 10,0 A - 2,1 - V
NTC-Widerstand/ NTC-Thermistor min. typ. max.
Nennwiderstand
rated resistance TC = 25°C R25 -5-
kΩ
Abweichung von R100
deviation of R100 TC = 100°C, R100 = 493 Ω∆R/R -5 5 %
Verlustleistung
power dissipation TC = 25°C P25 20 mW
B-Wert
B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
3(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
Thermische Eigenschaften / Thermal properties min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 1,2 K/W
Diode Wechsr./ Diode Inverter - - 2,3 K/W
Trans. Bremse/ Trans. Brake - - 1,2 K/W
Diode Bremse/ Diode Brake - - 2,3 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λPaste=1W/m*K RthCK - 0,08 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λgrease=1W/m*K - 0,04 - K/W
Diode Wechsr./ Diode Inverter - 0,08 - K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature Tvj - - 150 °C
Betriebstemperatur
operation temperature Top -40 - 125 °C
Lagertemperatur
storage temperature Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation Al2O3
CTI
comperative tracking index 225
Anzugsdrehmoment f. mech. Befestigung M3Nm
mounting torque ±10%
Gewicht
weight G 180 g
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DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
IC [A]
VCE [V]
IC [A]
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) I
C = f (VCE)
Output characteristic Inverter (typical) VGE = 15 V
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
Tj = 25°C
Tj = 125°C
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
Ausgangskennlinienfeld Wechselr. (typisch) I
C = f (VCE)
Output characteristic Inverter (typical) Tvj = 125°C
5(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
IC [A]
VGE [V]
IF [A]
VF [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) I
F = f (VF)
Forward characteristic of FWD Inverter (typical)
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 10 12 14
Tj = 25°C
Tj = 125°C
Übertragungscharakteristik Wechselr. (typisch) I
C = f (VGE)
Transfer characteristic Inverter (typical) VCE = 20 V
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3
Tj = 25°C
Tj = 125°C
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DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
600 V
82 Ohm
E [mWs
]
IC [A]
600 V
E [mWs
]
RG [Ω]
Schaltverluste Wechselr. (typisch) E
on = f (IC), Eoff = f (IC), Erec = f (IC) VCC =
Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff =
0
0,5
1
1,5
2
2,5
3
3,5
4
0 5 10 15 20 25
Eon
Eoff
Erec
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
0 20 40 60 80 100 120 140
Eon
Eoff
Erec
Schaltverluste Wechselr. (typisch) E
on = f (RG), Eoff = f (RG), Erec = f (RG)
Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC =
7(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
ZthJC [K/W]
t [s]
82 Ohm
IC [A]
VCE [V]
Transienter Wärmewiderstand Wechselr. Z
thJC = f (t)
Transient thermal impedance Inverter
0,1
1
10
0,001 0,01 0,1 1 10
Zth-IGBT
Zth-FWD
Sicherer Arbeitsbereich Wechselr. (RBSOA) I
C = f (VCE)
Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG =
0
5
10
15
20
25
0 200 400 600 800 1000 1200 1400
IC,Modul
IC,Chip
8(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
IC [A]
VCE [V]
IF [A]
VF [V]
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5
Tj = 25°C
Tj = 125°C
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) I
F = f (VF)
Forward characteristic of brake-chopper-FWD (typical)
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) I
C = f (VCE)
Output characteristic brake-chopper-IGBT (typical) VGE = 15 V
0
2
4
6
8
10
12
14
16
18
20
0 0,5 1 1,5 2 2,5 3
Tj = 25°C
Tj = 125°C
9(11)
DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
IF [A]
VF [V]
R[Ω]
TC [°C]
Durchlaßkennlinie der Gleichrichterdiode (typisch) I
F = f (VF)
Forward characteristic of Rectifier Diode (typical)
0
2
4
6
8
10
12
14
16
18
20
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6
Tj = 25°C
Tj = 150°C
NTC- Temperaturkennlinie (typisch) R = f (T)
NTC- temperature characteristic (typical)
Rtyp
100
1000
10000
100000
0 20 40 60 80 100 120 140 160
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DB-PIM-9.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM10GP120
Schaltplan/ Circuit diagram
G
eh
ä
useabmessungen
/
Package outl
i
nes
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
2 31
21
23
22
24
20 19
13
4
16 15
11
18 17
12
56
10
7
14
NTC
9
8
11(11)
DB-PIM-9.xls
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