Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance VDSS = 200 V
• Fast switching
• Low thermal resistance ID = 9 A
RDS(ON) ≤ 400 mΩ
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package
PINNING SOT78 (TO220AB) SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
2 drain1
3 source
tab drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj = 25 ˚C to 175˚C - 200 V
VDGR Drain-gate voltage Tj = 25 ˚C to 175˚C; RGS = 20 kΩ- 200 V
VGS Gate-source voltage - ± 20 V
IDContinuous drain current Tmb = 25 ˚C; VGS = 10 V - 9 A
Tmb = 100 ˚C; VGS = 10 V - 6.3 A
IDM Pulsed drain current Tmb = 25 ˚C - 36 A
PDTotal power dissipation Tmb = 25 ˚C - 88 W
Tj, Tstg Operating junction and - 55 175 ˚C
storage temperature
d
g
s
13
tab
2
123
tab
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999 1 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
EAS Non-repetitive avalanche Unclamped inductive load, IAS = 5 A; - 250 mJ
energy tp = 380 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig;14
IAS Peak non-repetitive - 9 A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 1.7 K/W
to mounting base
Rth j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 200 - - V
voltage Tj = -55˚C 178 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2 3 4 V
Tj = 175˚C 1 - - V
Tj = -55˚C - 6 V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 5.4 A - 300 400 mΩ
resistance Tj = 175˚C - - 1.12 Ω
gfs Forward transconductance VDS = 25 V; ID = 5.4 A 3.8 9 - S
IGSS Gate source leakage current VGS = ± 20 V; VDS = 0 V - 10 100 nA
IDSS Zero gate voltage drain VDS = 200 V; VGS = 0 V - 0.05 10 µA
current VDS = 160 V; VGS = 0 V; Tj = 175˚C - - 250 µA
Qg(tot) Total gate charge ID = 5.9 A; VDD = 160 V; VGS = 10 V - - 39 nC
Qgs Gate-source charge - - 6.3 nC
Qgd Gate-drain (Miller) charge - - 21 nC
td on Turn-on delay time VDD = 100 V; RD = 10 Ω;-8-ns
trTurn-on rise time VGS = 10 V; RG = 5.6 Ω-19-ns
td off Turn-off delay time Resistive load - 25 - ns
tfTurn-off fall time - 15 - ns
LdInternal drain inductance Measured tab to centre of die - 3.5 - nH
LdInternal drain inductance Measured from drain lead to centre of die - 4.5 - nH
(SOT78 package only)
LsInternal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 959 - pF
Coss Output capacitance - 93 - pF
Crss Feedback capacitance - 54 - pF
August 1999 2 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ISContinuous source current - - 9 A
(body diode)
ISM Pulsed source current (body - - 36 A
diode)
VSD Diode forward voltage IF = 9 A; VGS = 0 V - 0.85 1.2 V
trr Reverse recovery time IF = 9 A; -dIF/dt = 100 A/µs; - 92 - ns
Qrr Reverse recovery charge VGS = -10 V; VR = 25 V - 0.5 - µC
August 1999 3 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); V
GS
≥
10 V
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02 tp D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150 175
Mounting Base temperature, Tmb (C)
0
1
2
3
4
5
6
7
8
9
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
5 V
Tj = 25 C VGS = 10V
5.5 V
6 V
8 V
4.5 V
0.1
1
10
100
1 10 100 1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
012345678910
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
8 V
5 V
6 V
5.5 V
4.5 V
August 1999 4 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
typical
maximum
minimum
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
012345678910
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
10
100
1000
10000
0.1 1 10 100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1999 5 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
Fig.13. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.14. Maximum permissible non-repetitive
avalanche current (I
AS
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
0.1
1
10
0.001 0.01 0.1 1 10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
August 1999 6 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
MECHANICAL DATA
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT78 TO-220
D
D1
q
P
L
123
L2
(1)
b1
ee
b
0 5 10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78
DIMENSIONS (mm are the original dimensions)
AE
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT A1b1D1eP
mm 2.54
qQ
AbD
cL2
(1)
max.
3.0 3.8
3.6
15.0
13.5 3.30
2.79 3.0
2.7 2.6
2.2
0.7
0.4 15.8
15.2
0.9
0.7 1.3
1.0
4.5
4.1 1.39
1.27 6.4
5.9 10.3
9.7
L1
EL
97-06-11
August 1999 7 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
MECHANICAL DATA
Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm
A1D1
D
max. EeL
pHDQc
2.54 2.60
2.20
15.40
14.80
2.90
2.10
11 1.60
1.20 10.30
9.70
4.50
4.10 1.40
1.27 0.85
0.60 0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0 2.5 5 mm
scale
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped) SOT404
e e
E
b
D1
HD
D
Q
Lp
c
A1
A
13
2
mounting
base
98-12-14
99-06-25
August 1999 8 Rev 1.100
Philips Semiconductors Product specification
N-channel TrenchMOS transistor IRF630, IRF630S
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.17. SOT404 : soldering pattern for surface mounting
.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
17.5
11.5
9.0
5.08
3.8
2.0
August 1999 9 Rev 1.100
