BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com Features * Pb-Free Packages are Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage 45 60 80 VCBO BC635 BC637 BC639 Emitter - Base Voltage Vdc 45 60 80 VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 800 12 mW mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range 1 EMITTER Vdc 1 2 TO-92 CASE 29 STYLE 14 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BC 63x AYWW G G BC63x = Device Code x = 5, 7, or 9 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 September, 2005 - Rev. 5 1 Publication Order Number: BC635/D BC635, BC637, BC639, BC639-16 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 45 60 80 - - - - - - 120 - - 45 60 80 - - - - - - 5.0 - - Vdc - - - - 100 10 nAdc mAdc 25 40 40 40 100 25 - - - - - - - 250 160 160 250 - OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 Collector - Emitter Zero-Gate Breakdown Voltage(Note 1) (IC = 100 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CES BC639-16 Vdc V(BR)CBO BC635 BC637 BC639 Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) ICBO Vdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 BC639-16ZLT1 (IC = 500 mA, VCE = 2.0 V) - Collector - Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) - - 0.5 Vdc Base - Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) - - 1.0 Vdc fT - 200 - MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob - 7.0 - pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib - 50 - pF DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 BC635, BC637, BC639, BC639-16 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25C 100 50 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 PD TC 25C 20 10 5 1 BC635 BC637 BC639 PD TA 25C PD TC 25C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 1 Figure 3. Current-Gain -- Bandwidth Product 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. "Saturation" and "On" Voltages -0.2 V, TEMPERATURE COEFFICIENTS (mV/C) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 -1.0 VCE = 2 VOLTS DT = 0C to +100C -1.6 -2.2 qV for VBE 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 3 1000 1000 BC635, BC637, BC639, BC639-16 DEVICE ORDERING INFORMATION Device BC635RL1 BC635RL1G BC635ZL1 BC635ZL1G BC637 BC637G BC639 BC639G BC639RL1 BC639RL1G BC639ZL1 BC639ZL1G BC639-16ZL1 BC639-16ZL1G Package Shipping TO-92 2000 / Tape & Reel TO-92 (Pb-Free) 2000 / Tape & Reel TO-92 2000 / Tape & Reel TO-92 (Pb-Free) 2000 / Tape & Reel TO-92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box TO-92 5000 Units / Box TO-92 (Pb-Free) 5000 Units / Box TO-92 2000 / Tape & Reel TO-92 (Pb-Free) 2000 / Tape & Reel TO-92 2000 / Ammo Box TO-92 (Pb-Free) 2000 / Ammo Box TO-92 2000 / Ammo Box TO-92 (Pb-Free) 2000 / Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BC635, BC637, BC639, BC639-16 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X-X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 5 For additional information, please contact your local Sales Representative. BC635/D