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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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Notes regar ding these materials
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contained therein.
HA17458 Series
Dual Operational Amplifier
ADE-204-040 (Z)
Rev. 0
Dec. 2000
Description
HA17458 is dual operational amplifiers which provides internal phase compensation and high performance.
It can be applied widely to measuring control equipment and to general use.
Features
High voltage gain: 100dB (Typ)
Wide output amplitude: ±13V (Typ) [at RL 2k]
Protected from output shortcircuit
Internal phase compensation
Ordering Information
Type No. Application Package
HA17485FP Industrial use FP-8D
HA17458F Commercial use FP-8D
HA17458 Commercial use DP-8
HA17458PS Industrial use DP-8
HA17458 Series
2
Pin Arrangement
1
2
3
4
8
7
6
5
Vout1
Vin(–)1
Vin(+)1
VEE
VCC
Vout2
Vin(–)2
Vin(+)2
(Top View)
–+ +–
12
Circuit Schematic (1/2)
to VCC
Vin(+)
Vin(–)
to VEE
to VCC
VCC
VEE
Vout
HA17458 Series
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol HA17458 HA17458PS HA17458F HA17458FP Unit
Supply voltage VCC +18 +18 +18 +18 V
VEE –18 –18 –18 –18 V
Intput voltage VIN*3±15 ±15 ±15 ±15 V
Differential input voltage VIN(diff) ±30 ±30 ±30 ±30 V
Power dissipation PT670*1670*1385*2385*2mW
Operating temperature Topr –20 to +75 –20 to +75 –20 to +75 –20 to +75 °C
Storage temperature Tstg –55 to
+125 –55 to
+125 –55 to
+125 –55 to
+125 °C
Notes: 1. These are the allowable values up to Ta = 45 °C. Derate by 8.3mW/°C above that temperature.
2. These are the allowable values up to Ta = 31 °C mounting on 30% wiring density glass epoxy
board. Derate by 7.14mW/°C above that temperature.
3. If the supply voltage is less than ±15V, input voltage should be less than supply voltage.
HA17458 Series
4
Electrical Characteristics 1 (VCC = –VEE = 15V, Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Input offset voltage VIO 2.0 6.0 mV RS 10k
Input offset current IIO 6 200 nA
Input bias current IIB 30 500 nA
Line regulation VIO/VCC 30 150 µV/V RS 10k
VIO/VEE 30 150 µV/V RS 10k
Voltage gain AVD 86 100 dB RL 2k, Vout = ±10V
Common mode rejection ratio CMR 70 90 dB RS 10k
Common mode input voltage range VCM ±12 ±13 V
Peak-to-peak output voltage Vop-p ±12 ±14 V RL = 10k
Power dissipation Pd 90 200 mW No load, 2 channel
Slew rate SR 0.6 V/µsA
VD = 1
Input resistance Rin 0.3 1.0 M
Input capacitance Cin 6.0 pF
Output resistance Rout 75
Electrical Characteristics 2 (VCC = –VEE = 15V, Ta = –20 to +75°C)
Item Symbol Min Typ Max Unit Test conditions
Input offset voltage VIO 9.0 mV RS 10k
Input offset current IIO 400 nA
Input bias current IIB 1100 nA
Voltage gain AVD 80——dBR
L 2k, Vout = ±10V
Peak-to-peak output voltage Vop-p ±10 ±13 V RL = 2k
HA17458 Series
5
Characteristic Curves
Input Offset Voltage
vs. Ambient Temperature
5
4
3
2
1
0
Input Offset Voltage VIO (mV)
200 20406080
Ambient Temperature Ta (°C)
VCC = + 15 V
VEE = –15 V
RS 10 k
<
=
Input Bias Current
vs. Ambient Temperature
100
–20 Ambient Temperature Ta (°C)
80
60
40
20
0
Input Bias Current IIB (nA)
0 20406080
VCC = + 15 V
VEE = –15 V
Input Offset Current
vs. Ambient Temperature
20
Input Offset Current IIO (nA)
–20 Ambient Temperature Ta (°C)
16
12
8
4
00 20406080
VCC = + 15 V
VEE = –15 V
Power Dissipation
vs. Ambient Temperature
200
–20 Ambient Temperature Ta (°C)
Power Dissipation Pd (mW)
0 20406080
100
0
VCC = + 15 V
VEE = –15 V
No Load
Both Amplifiers
HA17458 Series
6
Voltage Gain
vs. Ambient Temperature
120
–20 Ambient Temperature Ta (°C)
110
100
90
80
70
Voltage Gain AVD (dB)
0 20406080
VCC = + 15 V
VEE = –15 V
RL = 2 k
Output Short Current
vs. Ambient Temperature
50
Output Short Current IOS (mA)
–20 Ambient Temperature Ta (°C)
40
30
20
10
00 20406080
VCC = + 15 V
VEE = –15 V
VOP-P = 0 V
Source
Sink
Ta = 25°C
No Load
Both Amplifiers
Power Dissipation
vs. Supply Voltage
Power Dissipation Pd (mW)
Supply Voltage VCC, VEE (V)
200
150
100
50
0±3±6±9±12 ±15 ±18
Maximum Output Voltage Swing
vs. Supply Voltage
Ta = 25°C
RL = 2 k
Maximum Output Voltage Swing VOP-P (V)
Supply Voltage VCC, VEE (V)
20
16
12
8
4
0±3±6±9±12 ±15 ±18
+V
OP-P
–V
OP-P
HA17458 Series
7
Voltage Gain vs. Frequency
Voltage Gain AVD (dB)
120
100
80
60
40
20
0
VCC = +15 V
VEE = –15 V
Ta = 25°C
RL = 2 k
10 30 100 300 1 k 3 k 10 k 30 k 100 k 300 k 1M
Frequency (Hz)
Phase Angle vs. Frequency
Phase Angle (deg)
Frequency (Hz)
100 300 1 k 3 k 10 k 30 k 100 k 300 k 1 M 3 M
0
–40
–80
–120
–160
VCC = +15 V
VEE = –15 V
Ta = 25°C
RL = 2 k
HA17458 Series
8
28
24
20
16
12
8
4
0
100 1k 10k 100k500 5k 50k 500k
VCC = +15 V
VEE = –15 V
Ta = 25°C
RL = 10 k
Maximum Output Voltage Swing
vs. Frequency
Maximum Output Voltage Swing Vop-p (V)
Frequency f (Hz)
16
12
8
4
0
–4
–8
–12
–16
200 1k 10k500 5k
VCC = +15 V
VEE = –15 V
Ta = 25°C
Maximum Output Voltage Swing
vs. Load Resistance
Maximum Output Voltage Swing Vop-p (V)
Load Resistance RL ()
Voltage Follower Large
Signal Pulse Response
10
0
–10 0 20406080
Input and Output Voltage (V)
Time (µs)
Output
Input
VCC = +15 V
VEE = –15 V
RL = 2 k
CL = 100 pF
Ta = 25°C
HA17458 Series
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DP-8
Conforms
Conforms
0.54 g
Unit: mm
14
58
9.6
10.6 Max
0.89 1.3
6.3
7.4 Max
2.54 Min
5.06 Max
2.54 ± 0.25 0.48 ± 0.10
7.62
0.25
+ 0.10
– 0.05
0° – 15°
0.1 Min
1.27 Max
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
FP-8D
Conforms
0.10 g
Unit: mm
*Dimension including the plating thickness
Base material dimension
0.10 ± 0.10
2.03 Max
4.4
*0.22 ± 0.05
4.85
0.75 Max
0.40 ± 0.06
0.60
+ 0.25
– 0.18
*0.42 ± 0.08
0.12
0.15
0° – 8°
M
85
14
1.05
5.25 Max
1.27
0.20 ± 0.04
6.50
+ 0.25
– 0.15
HA17458 Series
10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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