Pb Lead-free Green A Product Line of Diodes Incorporated PI2DDR3212 1.35V/1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch Features Description II14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 1600~4266 Mbps IIVDD 1.35V/ 1.5V/ 1.8V IIFlow through pinout option for easy layout IISEL and Global Enable II110 A typ. operating current at 1.35V VDD. IIHigh impedance and low Coff channel output when disabled or deselected IILow RON: 8 typical II3dB Bandwidth: 3.3GHz IILow insertion loss: -0.7dB (0 f 1 GHz) IILow return loss: -23dB (0 f 1 GHz) IILow cross-talk for high speed channels: -25dB typ. (0<f<2GHz) IILow off-isolation: -28dB (0 f 1 GHz) IILow bit-to-bit skew 20ps Max IIESD: 2KV HBM IIPOD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling IITotally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) IIHalogen and Antimony Free. "Green" Device (Note 3) IIFor automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ IIPackaging (Pb-free and Green) aa 52-pin, 3.5x9mm TQFN (ZL) aa 48-pin, 4.5x4.5mm TFBGA (NC) pin compatible with CBTW28DD14 This 14-bit DDR3/DDR4 switch is designed for 1.35V/1.5V/1.8V supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS select input signals. It is designed for DDR3 or DDR4 memory bus with speed up to 5Gbps. It supports DDR3 800 2133Mbps and DDR4 1600~4266 Mbps. PI2DDR3212 has a 1:2 demux or 2:1 mux topology. All 14-bit channels can be switched to one of the two ports simultaneously with the SEL input. This device also allows all ports to be disconnected. PI2DDR3212 uses Diodes' proprietary high speed switch technology providing consistent high bandwidth across all channels, with very little insertion loss, cross-talk, and bit to bit skew. It is available in a 52-pin TQFN 3.5x9mm package and 48-pin TFBGA 4.5x4.5mm package. The 48-pin version is pin compatible with CBTW28DD14. Block Diagram A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 Application IIDDR3/DDR4 Memory Bus System IINVDIMM Module IIFlash Memory Array sub system IIHigh Speed multiplexing SEL EN LOGIC CONTROL Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. PI2DDR3212 Document Number DS43334 Rev 1-2 1 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Pin Configuration (52-TQFN) 52 51 50 49 48 B13 C13 B12 C12 GND Pin Configuration (48-TFBGA ) 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 B11 C11 B10 C10 B9 C9 B8 C8 B7 C7 VDD B6 C6 B5 C5 B4 C4 B3 C3 B2 C2 C0 B0 C1 B1 GND 22 23 24 25 26 GND EN A13 A12 A11 VDD A10 A9 A8 A7 GND A6 A5 A4 A3 VDD A2 A1 A0 SEL GND Pin Description Pin Name IO Type VDD Power GND Ground Descriptions 1.35V, 1.5V or 1.8V power supply. 1.35V, Ground connection A[0:13] I/O 14-bit wide input/output, port A B[0:13] I/O 14-bit wide input/output, port B C[0:13] I/O 14-bit wide input/output, port C SEL I CMOS input for channel selection CMOS input EN I When HIGH, connection is set using the SEL input signal When LOW, all ports are mutually isolated Truth Table (SEL) Truth Table (EN) SEL Function EN Function 0 Output B is selected 1 Global Enable 1 Output C is selected 0 Global Disable PI2DDR3212 Document Number DS43334 Rev 1-2 2 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Supply Voltage to Ground Potential ...................................... -0.3V to 2.5V All Inputs.......................................................................... -0.3V to VDD+0.3V Ambient Operating Temperature ............................................-10 to +85C Storage Temperature.................................................................-65 to +150C Junction Temperature .......................................................................... 150C Soldering Temperature.......................................................................... 260C Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Recommended Operation Conditions Parameter Min. Ambient Operating Temperature Typ. -10 Power Supply Voltage (measured in respect to GND) Max. Unit +85 C +1.28 1.8 +2.0 V Min. Typ. Max. Unit 1.35/ 1.5/1.8 2 V EN= HIGH; VDD=1.8V 220 350 A EN= LOW; VDD=1.8V 0.1 10 A EN= HIGH; VDD=1.35V 110 200 A EN= LOW; VDD=1.35V 0.05 2 A Static Characteristics Symbol Parameter VDD Supply Voltage IDD VDD Supply Current IDD VDD Supply Current Conditions 1.28 Control Pin (SEL, EN) IIH High level digital input current VIH=VDD, VDD=2.0V 5 A IIL Low level digital input current VIL = GND, VDD=2.0V 5 A VIH High level digital input voltage VIL Low level digital input voltage 0.8 *VDD V 0.2*VDD V I/O Pin (A, B ,C) COFF Switch OFF capacitance f = 1MHz; VI/O = 0V 1.1 pF CON Switch ON capacitance f = 1MHz; VI/O = 0V 2.1 pF PI2DDR3212 Document Number DS43334 Rev 1-2 3 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Dynamic Characteristics (over recommended operating conditions unless otherwise noted) Symbol Parameter tstartup Startup time Test Conditions Min. Supply voltage valid or EN going HIGH to channels specified characteristics Typ.(1) Max. 5 10 s trcfg Reconfiguration time SEL state change to channel specified operating characteristics tpd Propagation delay From A port to B port or C port or vice versa 60 tsk Skew time From any output to any output 18 VI Input Voltage B Bandwidth C Crosstalk attenuation IL Insertion Loss RL OI PI2DDR3212 0.02 -0.3 0.04 ps 20 ps Vdd+0.3 V 3.3 GHz -26 dB 0 f 1GHz -0.7 dB f = 2.5GHz -2.5 dB Input Return Loss 0 f 1GHz -23 dB Off Isolation 0 f 1 GHz -28 dB Document Number DS43334 Rev 1-2 -3dB intercept Units Adjacent channels are on; 0 f 1GHz 4 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Application Diagram Super capacitor NVDIMM Application using PI2DDR3212 SSD, Flash Storage Application using PI2DDR3212 PI2DDR3212 Document Number DS43334 Rev 1-2 5 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Part Marking ZL Package PI2DDR 3212ZLE YYWWXX YY: Year WW: Workweek 1st X: Assembly Code 2nd X: Fab Code PI2DDR3212 Document Number DS43334 Rev 1-2 NC Package PI2DDR 3212NCE YYWWXX YY: Year WW: Workweek 1st X: Assembly Code 2nd X: Fab Code Bar above fab code means Cu wire 6 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Packaging Mechanical: 48-TFBGA (NC) 14-0123 PI2DDR3212 Document Number DS43334 Rev 1-2 7 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 Packaging Mechanical: 52-TQFN (ZL) For latest package info. please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/ Ordering Information Ordering Code Packaging Code Package Description PI2DDR3212ZLEX ZL 52-Pin, Thin Quad Flat No-Lead (TQFN) PI2DDR3212NCEX NC 48-Pin, Thin Fine Pitch Ball Grid Array (TFBGA) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. E = Pb-free and Green 5. X suffix = Tape/Reel PI2DDR3212 Document Number DS43334 Rev 1-2 8 www.diodes.com December 2020 Diodes Incorporated A Product Line of Diodes Incorporated PI2DDR3212 IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES ("DIODES") MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. Copyright (c) 2020 Diodes Incorporated www.diodes.com PI2DDR3212 Document Number DS43334 Rev 1-2 9 www.diodes.com December 2020 Diodes Incorporated