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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
B0
B2
B3
B4
B5
B1
B6
B7
B8
B9
B10
B11
B12
B13
A0
A2
A3
A4
A5
A1
A6
A7
A8
A9
A10
A11
A12
A13
C0
C2
C3
C4
C5
C1
C6
C7
C8
C9
C10
C11
C12
C13
SEL
EN
LOGIC
CONTROL
Description
is 14-bit DDR3/DDR4 switch is designed for 1.35V/1.5V/1.8V
supply voltage, POD_12, SSTL_135, SSTL_15 or SSTL_18
signaling and CMOS select input signals. It is designed for DDR3
or DDR4 memory bus with speed up to 5Gbps. It supports DDR3
800 2133Mbps and DDR4 1600~4266 Mbps.
PI2DDR3212 has a 1:2 demux or 2:1 mux topology. All 14-bit
channels can be switched to one of the two ports simultaneously
with the SEL input. is device also allows all ports to be
disconnected.
PI2DDR3212 uses Diodes' proprietary high speed switch
technology providing consistent high bandwidth across all
channels, with very little insertion loss, cross-talk, and bit to bit
skew.
It is available in a 52-pin TQFN 3.5x9mm package and 48-pin
TFBGA 4.5x4.5mm package. e 48-pin version is pin compatible
with CBTW28DD14.
Features
14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4
1600~4266 Mbps
VDD 1.35V/ 1.5V/ 1.8V
Flow through pinout option for easy layout
SEL and Global Enable
110 µA typ. operating current at 1.35V VDD.
High impedance and low Co channel output when disabled
or deselected
Low RON: 8Ω typical
3dB Bandwidth: 3.3GHz
Low insertion loss: -0.7dB (0 ≤ f ≤ 1 GHz)
Low return loss: -23dB (0 ≤ f ≤ 1 GHz)
Low cross-talk for high speed channels: -25dB typ. (0<f<2GHz)
Low o-isolation: -28dB (0 ≤ f ≤ 1 GHz)
Low bit-to-bit skew 20ps Max
ESD: 2KV HBM
POD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specic change control
(i.e. parts qualied to AEC-Q100/101/200, PPAP capable,
and manufactured in IATF 16949 certied facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-denitions/
Packaging (Pb-free and Green)
52-pin, 3.5x9mm TQFN (ZL)
48-pin, 4.5x4.5mm TFBGA (NC) pin compatible with
CBTW28DD14
Application
DDR3/DDR4 Memory Bus System
NVDIMM Module
Flash Memory Array sub system
High Speed multiplexing
A Product Line of
Diodes Incorporated
PI2DDR3212
1.35V/1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch
b
P
Lead-free Green
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s denitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are dened as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm
antimony compounds.
Block Diagram
2www.diodes.com December 2020
Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
Pin Name IO Type Descriptions
VDD Power 1.35V, 1.5V or 1.8V power supply.
GND Ground 1.35V, Ground connection
A[0:13] I/O 14-bit wide input/output, port A
B[0:13] I/O 14-bit wide input/output, port B
C[0:13] I/O 14-bit wide input/output, port C
SEL I CMOS input for channel selection
EN I
CMOS input
When HIGH, connection is set using the SEL input signal
When LOW, all ports are mutually isolated
EN Function
1Global Enable
0Global Disable
Pin Configuration (48-TFBGA ) Pin Configuration (52-TQFN)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
B11
C11
B10
C10
B9
C9
B8
C8
B7
C7
V
B6
C6
B5
C5
B4
C4
B3
C3
B2
C2
GND
EN
DD
A13
A12
A11
V
DD
A10
A9
A8
A7
GND
A6
A5
A4
A3
V
DD
A2
A1
A0
SEL
GND
22
23
24
25
26
52
51
50
49
48
B13
C13
B12
C12
GND
C0
B0
C1
B1
GND
Pin Description
Truth Table (SEL) Truth Table (EN)
SEL Function
0 Output B is selected
1 Output C is selected
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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
Supply Voltage to Ground Potential .....................................-0.3V to 2.5V
All Inputs ......................................................................... -0.3V to VDD+0.3V
Ambient Operating Temperature ...........................................-10 to +85°C
Storage Temperature ................................................................-65 to +150°C
Junction Temperature ......................................................................... 150°C
Soldering Temperature .........................................................................260°C
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device.
is is a stress rating only and functional operation of
the device at these or any other conditions above those
indicated in the operational sections of this specication
is not implied. Exposure to absolute maximum rating
conditions for extended periods may aect reliability.
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Recommended Operation Conditions
Parameter Min. Typ. Max. Unit
Ambient Operating Temperature -10 +85 °C
Power Supply Voltage (measured in respect to GND) +1.28 1.8 +2.0 V
Static Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
VDD Supply Voltage 1.28 1.35/
1.5/1.8 2 V
IDD VDD Supply Current EN= HIGH; VDD=1.8V 220 350 μA
EN= LOW; VDD=1.8V 0.1 10 μA
IDD VDD Supply Current EN= HIGH; VDD=1.35V 110 200 μA
EN= LOW; VDD=1.35V 0.05 2μA
Control Pin (SEL, EN)
IIH High level digital input current VIH=VDD, VDD=2.0V 5μA
IIL Low level digital input current VIL = GND, VDD=2.0V 5μA
VIH High level digital input voltage 0.8 *VDD V
VIL Low level digital input voltage 0.2*VDD V
I/O Pin (A, B ,C)
COFF Switch OFF capacitance f = 1MHz; VI/O = 0V 1.1 pF
CON Switch ON capacitance f = 1MHz; VI/O = 0V 2.1 pF
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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
Dynamic Characteristics (over recommended operating conditions unless otherwise noted)
Symbol Parameter Test Conditions Min. Ty p.(1) Max. Units
tstartup Startup time Supply voltage valid or EN going
HIGH to channels specied characteristics 510
µs
trcfg Reconguration time SEL state change to channel specied oper-
ating characteristics 0.02 0.04
tpd Propagation delay From A port to B port or C port or vice
versa 60 ps
tsk Skew time From any output to any output 18 20 ps
VIInput Voltage -0.3 Vdd+0.3 V
BBandwidth -3dB intercept 3.3 GHz
CCrosstalk attenuation Adjacent channels are on;
0 ≤ f ≤ 1GHz -26 dB
ILInsertion Loss 0 ≤ f ≤ 1GHz -0.7 dB
f = 2.5GHz -2.5 dB
RLInput Return Loss 0 ≤ f ≤ 1GHz -23 dB
OI O Isolation 0 ≤ f ≤ 1 GHz -28 dB
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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
Application Diagram
NVDIMM Application using PI2DDR3212
SSD, Flash Storage Application using PI2DDR3212
Super capacitor
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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
PI2DDR
3212ZLE
YYWWXX
YY: Year
WW: Workweek
1st X: Assembly Code
2nd X: Fab Code
PI2DDR
3212NCE
YYWWXX
YY: Year
WW: Workweek
1st X: Assembly Code
2nd X: Fab Code
Bar above fab code means Cu wire
Part Marking
ZL Package NC Package
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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
Packaging Mechanical: 48-TFBGA (NC)
14-0123
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Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
Ordering Information
Ordering Code Packaging Code Package Description
PI2DDR3212ZLEX ZL 52-Pin, in Quad Flat No-Lead (TQFN)
PI2DDR3212NCEX NC 48-Pin, in Fine Pitch Ball Grid Array (TFBGA)
Packaging Mechanical: 52-TQFN (ZL)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s denitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are dened as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm
antimony compounds.
4. E = Pb-free and Green
5. X sufx = Tape/Reel
For latest package info.
please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/
9www.diodes.com December 2020
Diodes Incorporated
PI2DDR3212
Document Number DS43334 Rev 1-2
A Product Line of
Diodes Incorporated
PI2DDR3212
IMPORTANT NOTICE
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TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FIT-
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2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein
and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This docu-
ment is intended for skilled and technically trained engineering customers and users who design with Diodes products. Diodes products may be used to facilitate
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(b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring their applications, which incorporate Diodes products, comply the
applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards
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corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated
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