PD - 9.1709 IRF7343 PRELIMINARY HEXFET(R) Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 2 7 3 6 4 5 P -C H A N N E L M O S FE T Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. D1 D1 V DSS N-Ch P-Ch 55V -55V D2 D2 RDS(on) 0.050 0.105 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings Max. Parameter V DS I D @ TA = 25C I D @ TA = 70C I DM PD @TA = 25C PD @TA = 70C EAS IAR EAR VGS dv/dt TJ, TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range N-Channel 55 4.7 3.8 38 P-Channel -55 -3.4 -2.7 -27 2.0 1.3 72 4.7 114 -3.4 0.20 20 5.0 -5.0 -55 to + 150 Units V A W W mJ A mJ V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. Max. Units --- 62.5 C/W 10/29/97 IRF7343 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient Min. 55 -55 -- -- -- -- -- -- 1.0 -1.0 7.9 3.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. -- -- -- -- 0.059 -- 0.054 -- 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 -- -- -- -- -- -- -- -- -- 2.0 -- -2.0 -- 25 -- -25 -- 100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.8 10 15 32 48 43 64 13 20 22 32 740 -- 690 -- 190 -- 210 -- 71 -- 86 -- Min. -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 0.70 -0.80 60 54 120 85 N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Units V V/C V S A nA Conditions VGS = 0V, I D = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 3.8A VGS = -10V, ID = -3.1A VGS = -4.5V, ID = -2.6A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 10V, ID = 4.5A VDS = -10V, ID = -3.1A VDS = 55V, V GS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 55C VDS = -55V, VGS = 0V, TJ = 55C VGS = 20V N-Channel ID = 4.5A, VDS = 44V, VGS = 10V nC P-Channel ID = -3.1A, VDS = -44V, VGS = -10V N-Channel VDD = 28V, ID = 1.0A, RG = 6.0, RD = 16 ns P-Channel VDD = -28V, I D = -1.0A, RG = 6.0, RD = 16 N-Channel V GS = 0V, VDS = 25V, = 1.0MHz pF P-Channel V GS = 0V, VDS = -25V, = 1.0MHz Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Max. Units Conditions 2.0 -2.0 A 36 -25 1.2 T J = 25C, IS = 2.0A, VGS = 0V V -1.2 TJ = 25C, IS = -2.0A, VGS = 0V 90 N-Channel ns 80 T J = 25C, IF =2.0A, di/dt = 100A/s 170 P-Channel nC 130 T J = 25C, IF = -2.0A, di/dt = 100A/s Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) N-Channel ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C Surface mounted on FR-4 board, t 10sec. P-Channel ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS , TJ 150C N-Channel Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. P-Channel Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. IRF7343 N-Channel 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 1 0.1 10 3.0V 20s PULSE WIDTH TJ = 25 C 1 10 100 V DS, Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 20s PULSE WIDTH TJ = 150 C 1 0.1 TJ = 25 C TJ = 150 C 10 TJ = 150 C 10 TJ = 25 C 1 V DS = 25V 20s PULSE WIDTH 1 3 4 5 V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 6 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 V SD,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 1.4 IRF7343 () I D = 4.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 V GS = 10V 0 20 40 60 80 100 120 140 160 R DS (on), Drain-to-Source On Resistance RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 N-Channel 0.120 0.100 0.080 VGS = 4.5V 0.060 VGS = 10V 0.040 0 10 TJ , Junction Temperature ( C) 30 40 Fig 6. Typical On-Resistance Vs. Drain Current Fig 5. Normalized On-Resistance Vs. Temperature 200 0.110 0.090 I D = 4 .7 A 0.070 0.050 0.030 A 2 4 -V G S 6 8 10 , G ate-to-S our ce V oltage ( V) Fig 7. Typical On-Resistance Vs. Gate Voltage 12 EAS , Single Pulse Avalanche Energy (mJ) 0.130 RDS(on) , Drain-to-Source On Resistance ( ) 20 I D , Drain Current (A) ID 2.1A 3.8A 4.7A TOP 160 BOTTOM 120 80 40 0 25 50 75 100 125 Starting T J, Junction Temperature 150 ( C) Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF7343 N-Channel 1200 VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss 200 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 0 1 10 100 0 10 20 30 40 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + T A 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7343 100 P-Channel 100 VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 -3.0V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 BOTTOM VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V -3.0V 10 -3.0V 1 20s PULSE WIDTH TJ = 150 C 0.1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 100 100 -ISD , Reverse Drain Current (A) Fig 13. Typical Output Characteristics -I D , Drain-to-Source Current (A) Fig 12. Typical Output Characteristics TJ = 25 C TJ = 150 C 10 V DS = -25V 20s PULSE WIDTH 1 3 4 5 6 -VGS , Gate-to-Source Voltage (V) Fig 14. Typical Transfer Characteristics 7 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage 1.4 IRF7343 P-Channel ID = -3.4 A R DS (on), Drain-to-Source On Resistance () R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.240 0.200 VGS = -4.5V 0.160 0.120 VGS = -10V 0.080 0 2 TJ , Junction Temperature ( C) 6 8 10 0.45 EAS , Single Pulse Avalanche Energy (mJ) 300 0.35 0.25 I D = -3.4 A 0.15 0.05 A 2 5 -V G S 8 11 , G ate -to-S ource V oltage ( V) Fig 18. Typical On-Resistance Vs. Gate Voltage 12 Fig 17. Typical On-Resistance Vs. Drain Current Fig 16. Normalized On-Resistance Vs. Temperature RDS(on) , Drain-to-Source On Resistance ( ) 4 -I D , Drain Current (A) 14 TOP 250 BOTTOM ID -1.5A -2.7A -3.4A 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) Fig 19. Maximum Avalanche Energy Vs. Drain Current 150 IRF7343 1200 20 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 960 C, Capacitance (pF) P-Channel Ciss 720 480 Coss 240 Crss 0 1 10 ID = -3.1A VDS =-48V VDS =-30V VDS =-12V 16 12 8 4 0 100 0 10 --VDS , Drain-to-Source Voltage (V) 20 30 40 Q G, Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 IRF7343 Package Outline SO8 Outline INCHES DIM D -B- 5 8 E -A- 1 7 2 6 5 3 H 0.25 (.010) 4 e 6X M A M e1 MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 -C- 0.10 (.004) L 8X A1 B 8X D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e1 A 0.25 (.010) MAX e K x 45 6 C 8X .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 0 8 M C A S B S 0 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 6 8 6.20 RECOMMENDED FOOTPRINT NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 5 MILLIMETERS MIN 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 0.72 (.028 ) 8X 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking Information SO8 E X A M P LE : TH IS IS A N IR F 7 101 3 12 IN T E R N A TI ON A L R E C T IF IE R LO G O D A T E C O D E (Y W W ) Y = LA S T D IG IT O F T H E YE A R W W = W EEK XX X X F 7 101 T OP PART NUMBER W AFER LO T C O D E (LA S T 4 D IG IT S ) B O T TO M IRF7343 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E ED D IR E C T IO N N O TE S: 1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R. 2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ). 3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 . 33 0. 00 (12 .99 2) M A X. 1 4. 40 ( .5 66 ) 1 2. 40 ( .4 88 ) N O T ES : 1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. 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