IRF7434 - International Rectifier

N-Ch P-Ch

VDSS 55 V -55V

RDS(on) 0.050Ω 0.105Ω

PRELIMINARY HEXFET® Power MOSFET

PD - 9.1709

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

10/29/97

SO-8

lGeneration V Technology

lUltra Low On-Resistance

lDual N and P Channel MOSFET

lSurface Mount

lFully Avalanche Rated

IRF7343

Description

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top V iew

Max.

N-Channel P-Channel Units

VDS Drain-Source Voltage 55 -55 V

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7

IDM Pulsed Drain Current 38 -27

@TA = 25°C Maximum Power Dissipation 2.0 W

PD @TA = 70°C Maximum Power Dissipation 1.3 W

EAS Single Pulse Avalanche Energy 72 114 mJ

IAR Avalanche Current 4.7 -3.4 A

EAR Repetitive Avalanche Energy 0.20 mJ

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns

TJ,

TSTG Junction and Storage Temperature Range -55 to + 150 °C

Parameter

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient ––– 62.5 °C/W

Thermal Resistance

IRF7343

 Surface mounted on FR-4 board, t ≤ 10sec.

Parameter Min. Typ. Max. Units Conditions

N-Ch 55 — — VGS = 0V, ID = 250µA

P-Ch -55 — — VGS = 0V, ID = -250µA

N-Ch — 0.059 — Reference to 25°C, ID = 1mA

P-Ch — 0.054 — Reference to 25°C, ID = -1mA

— 0.0430.050 VGS = 10V, ID = 4.5A 

— 0.0560.065 VGS = 4.5V, ID = 3.8A 

— 0.0950.105 VGS = -10V, ID = -3.1A 

— 0.1500.170 VGS = -4.5V, ID = -2.6A 

N-Ch 1.0 — — VDS = VGS, ID = 250µA

P-Ch -1.0 — — VDS = VGS, ID = -250µA

N-Ch 7.9 — — VDS = 10V, I D = 4.5A 

P-Ch 3.3 — — VDS = -10V, ID = -3.1A 

N-Ch — — 2.0 VDS = 55V, VGS = 0V

P-Ch — — -2.0 VDS = -55V, VGS = 0V

N-Ch — — 25 VDS = 55V, VGS = 0V, TJ = 55°C

P-Ch — — -25 VDS = -55V, VGS = 0V, TJ = 55°C

IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±20V

N-Ch — 24 36

P-Ch — 26 38

N-Ch — 2.3 3.4

P-Ch — 3.0 4.5

N-Ch — 7.0 10

P-Ch — 8.4 13

N-Ch — 8.3 12

P-Ch — 14 22

N-Ch — 3.2 4.8

P-Ch — 10 15

N-Ch — 32 48

P-Ch — 43 64

N-Ch — 13 20

P-Ch — 22 32

N-Ch — 740 —

P-Ch — 690 —

N-Ch — 190 — pF

P-Ch — 210 —

N-Ch — 71 —

P-Ch — 86 —

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient

RDS(ON) Static Drain-to-Source On-Resistance

VGS(th) Gate Threshold Voltage

gfs Forward Transconductance

IDSS Drain-to-Source Leakage Current

QgTotal Gate Charge

Qgs Gate-to-Source Charge

Qgd Gate-to-Drain ("Miller") Charge

td(on) Turn-On Delay Time

trRise Time

td(off) Turn-Off Delay Time

tfFall Time

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V/°C

Ω

µA

N-Channel

ID = 4.5A, VDS = 44V, VGS = 10V



P-Channel

ID = -3.1A, VDS = -44V, VGS = -10V

N-Channel

VDD = 28V, ID = 1.0A, RG = 6.0Ω,

RD = 16Ω



P-Channel

VDD = -28V, ID = -1.0A, RG = 6.0Ω,

RD = 16Ω

N-Channel

VGS = 0V, VDS = 25V, ƒ = 1.0MHz

P-Channel

VGS = 0V, VDS = -25V, ƒ = 1.0MHz

N-Ch

P-Ch

Parameter Min. Typ. Max. Units Conditions

N-Ch — — 2.0

P-Ch — — -2.0

N-Ch — — 36

P-Ch — — -25

N-Ch — 0.70 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V 

P-Ch — -0.80 -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V 

N-Ch — 60 90

P-Ch — 54 80

N-Ch — 120 170

P-Ch — 85 130

Source-Drain Ratings and Characteristics

ISContinuous Source Current (Body Diode)

ISM Pulsed Source Current (Body Diode) 

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

N-Channel

TJ = 25°C, IF =2.0A, di/dt = 100A/µs

P-Channel 

TJ = 25°C, IF = -2.0A, di/dt = 100A/µs

N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

 N-Channel Starting T J = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.

P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.

IRF7343

100

3 4 5 6

V = 25V

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.5V

3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.5V

3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

4.5V 4.5V

0.1

100

0.2 0.5 0.8 1.1 1.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

J°

T = 25 C

J°

IRF7343

010 20 30 40

0.040

0.060

0.080

0.100

0.120

R , Drain-to-Source On Resistance

I , Drain Current (A)

DS (on)

VGS = 10V

VGS = 4.5V

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

N-Channel

(Ω)

DS(on)

, Drain-to-Source On Resistance ( Ω )

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

4.7A

25 50 75 100 125 150

120

160

200

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

2.1A

3.8A

4.7A

0.030

0.050

0.070

0.090

0.110

0.130

24681012

-V , G ate-to-S ource Voltage (V)

I = 4.7 A

IRF7343

1 10 100

200

400

600

800

1000

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

010 20 30 40

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D4.5A

V = 12V

V = 30V

V = 48V

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7343

0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

Fig 14. Typical Transfer Characteristics

Fig 13. Typical Output Characteristics

Fig 12. Typical Output Characteristics

Fig 15. Typical Source-Drain Diode

Forward Voltage

P-Channel

0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

100

34567

V = -25V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

-4.5V -4.5V

IRF7343

Fig 16. Normalized On-Resistance

Vs. Temperature

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

Fig 17. Typical On-Resistance Vs. Drain

Current

Fig 18. Typical On-Resistance Vs. Gate

Voltage

P-Channel

0 2 4 6 8 10 12

0.080

0.120

0.160

0.200

0.240

R , Drain-to-Source On Resistance

-I , Drain Current (A)

DS (on)

VGS = -4.5V

VGS = -10V

(Ω)

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-3.4 A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

DS(on)

, Drain-to-Source On Resistance ( Ω )

0.05

0.15

0.25

0.35

0.45

2 5 8 11 14

-V , G ate-to-S ource Voltage (V)

I = - 3 .4 A

IRF7343

010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-3.1A

V =-12V

V =-30V

V =-48V

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

P-Channel

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

1 10 100

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

IRF7343

Package Outline

SO8 Outline

SO8

Part Marking Information

EXAM PLE : THIS IS AN IRF7 101

DATE CODE (YWW)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

W A F ER

L OT CODE

(LAST 4 DIGITS)

XXXX

BOTTOM

PART NUM BER

TOP

INTERNATIONAL

RECT IFIE R

L OGO

F7101

312

K x 45°

0.25 (.010) M A M

0.10 (.004)

B 8X

0.25 (.010) M C A S B S

- C -

- B -

- A -

8 7 6 5

1 2 3 4

RECOMMENDED FOOTPRINT

0.72 (.028 )

1.78 (.070)

6.46 ( .255 )

1.27 ( .050 )

DIM INCHES MILLIMETERS

MIN MAX MIN MAX

A .0532 .0688 1.35 1.75

A1 .0040 .0098 0.10 0.25

B .014 .018 0.36 0.46

C .0075 .0098 0.19 0.25

D .189 .196 4.80 4.98

E .150 .157 3.81 3.99

e .050 BASIC 1.27 BASIC

e1 .025 BASIC 0.635 BASIC

H .2284 .2440 5.80 6.20

K .011 .019 0.28 0.48

L 0.16 .050 0.41 1.27

0° 8° 0° 8°

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

IRF7343

SO8

Dimensions are shown in millimeters (inches)

Tape & Reel Information

330. 00

(12.992)

M AX .

14.40 ( .566 )

12.40 ( .488 )

NO TES :

1. CO NTROLL ING DIME NS IO N : MIL LIME TER .

2. OUTLINE CON FORMS TO EIA-481 & EIA-541.

FE ED DIRE CTIO N

TERMINAL NUMBER 1

12.3 ( .48 4 )

11.7 ( .46 1 )

8.1 ( .3 18 )

7.9 ( .3 12 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIO NS ARE SHOWN IN MILLIM ETER S(INCHES).

3. OUTLINE CONFORMS T O EIA-481 & EIA-541.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/ Data and specifications subject to change without notice. 10/97