SBM52214N-E9405 - Infineon Technologies

Data Sheet 1 2002-05-01

Medium Power

BIDI® Optical Standard Module

1310 nm Emitting, 1310 nm Receiving

SBM52214x

Fiber Optics

BIDI® is a registered trademark of Infineon Technologies

Features

• Designed for application in passive-optical

networks

• Integrated Wavelength Division Multiplexer

(WDM) or Beam Splitter

• Bi-Directional Transmission in one optical window

• Single fiber solution

• FP-Laser Diode with Multi-Quantum Well structure

• Class 3B Laser Product

• Suitable for bit rates up to 1.25 Gbit/s

• Ternary Photodiode at rear mirror for monitoring and control of radiant power

• Low noise / high bandwidth PIN diode

• Hermetically sealed subcomponents, similar to TO 46

• With singlemode fiber pigtail

SBM52214x

Pin Configuration

Data Sheet 2 2002-05-01

Pin Configuration

Figure 1 Transmitter

Figure 2 Receiver

Other Pinnings on request / different drawing set required for non standard pinning

Available Pinnings

Type Transmitter Receiver

SBM52214x 2 (Standard) 1 (Standard)

2.54 mm

Transmitter (bottom view)

Pinning 1

(on request)

Pinning 2

(Standard)

2.54 mm

Receiver (bottom view)

Pinning 1

Pinning 2

Pinning 1

(Standard)

Pinning 2

(on request)

SBM52214x

Description

Data Sheet 3 2002-05-01

Description

The Infineon module for bidirectional optical transmission has been designed for

different optical networks structures.

In the last few years the structure has changed from point to point planned for Broad

band ISDN to a point to multipoint passive optical network (PON) architecture for the

optical network in the subscriber loop.

A transceiver can be realized with discrete elements (Figure 3). Transmitter and

receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength

independent or WDM).

Figure 3 Realization with Discrete Elements

Infineon has realized this transceiver configuration in a compact module called a BIDI®

(Figure 4).

This module is especially suitable for separating the opposing signals at the ends of a

link. It replaces a discrete solution with a transmitter, receiver and coupler.

The basic devices are a laser diode and a photodiode, each in a TO package, plus the

filter in the beam path. A lens in the TO laser concentrates the light and enables it to be

launched into the single-mode fiber of the module. In the same way the light from the

fiber is focused onto the small, light-sensitive area of the photodiode to produce a high

photo current. The mirror for coupling out the received signal is arranged in the beam so

that the transmitter and receiver are at right angles to each other. This means the

greatest possible degree of freedom in the layout of the electric circuit.

Coupler

2:1 or 2:2

3 dB wavelength independent

or wavelength division multiplexing

Transmitter

Receiver

SBM52214x

Description

Data Sheet 4 2002-05-01

Figure 4 Compact Realization of the Transceiver in One Module

A decisive advantage of the module is its use of standard TO components. These

devices, produced in large quantities, are hermetically sealed and tested before they are

built in. This makes a very substantial contribution to the excellent reliability of the

module. The solid metal package of the module serves the same purpose. It allows the

use of modern laser welding techniques for reliable fixing of the different elements and

the fiber holder.

TO-Detector

Glass Lens

Fiber

Beam Splitter

TO-

Laser

SBM52214x

Technical Data

Data Sheet 5 2002-05-01

Technical Data

Absolute Maximum Ratings

Parameter Symbol Limit Values Unit

min. max.

Module

Operating temperature range at case TC–40 85 °C

Storage temperature range Tstg –40 85

Soldering temperature (tmax = 10 s,

2 mm distance from bottom edge of case)

TS260

Laser Diode

Direct forward current IF max 120 mA

Radiant power CW PF, rad 2mW

Reverse Voltage VR2V

Monitor Diode

Reverse Voltage VR10 V

Forward Current IF2mA

Receiver Diode

Reverse Voltage VR10 V

Forward Current IF2mA

Optical power into the optical port Pport 1.5 mW

SBM52214x

Technical Data

Data Sheet 6 2002-05-01

The electro-optical characteristics described in the following tables are only valid for use

within the specified maximum ratings or under the recommended operating conditions.

Transmitter Electro-Optical Characteristics

Parameter Symbol Limit Values Unit

min. typ. max.

Optical output power

(maximum)

PF, max 1.2 mW

Emission wavelength center of

range, PF = 0.5 PF, max.

λtrans 1270 1350 nm

Spectral width (RMS) σλ5

Temperature coefficient of

wavelength TC 0.5 nm/K

Threshold current

(whole temperature range)

Ith 245mA

Forward voltage, PF = 0.5 PF, max. VF1.5 V

Radiant power at Ith Pth 50 µW

Slope efficiency (–40...85°C) η20 100 mW/A

Variation of 1st derivative of P/I

(0.1 to 1.0 mW)

Svar –30 30 %

Differential series resistance RS8Ω

Rise time (10%–90%) tr100 200 ps

Fall time (10%–90%) tf270 500

Monitor Diode Electro-Optical Characteristics

Parameter Symbol Limit Values Unit

min. max.

Dark current, VR = 5 V, PF = 0, T = Tmax IR200 nA

Photocurrent, VR = 5 V, PF = 0.5 PF, max IP50 1500 µA

Capacitance, VR = 5 V, f = 1 MHz C510 pF

Tracking error1), VR = 5 V

1) The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature

range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:

TE –1 1 dB

TE dB[]10 PFTC

[]

PF25°C[]

-------------------------

log×=

SBM52214x

Technical Data

Data Sheet 7 2002-05-01

Receiver Diode Electro-Optical Characteristics

Parameter Symbol Limit Values Unit

min. max.

Spectral sensitivity, VR = 5 V, λ = 1310 nm Srec 0.3 1 A/W

Rise and fall time (10%–90%)

RL = 50 Ω, VR = 5 V

tr; tf1ns

Total capacitance

VR = 5 V, Popt = 0, f = 1 MHz C1.5 pF

Dark current, VR = 5 V, Popt = 0 ID50 nA

Module Electro-Optical Characteristics

Parameter Symbol Limit Values Unit

min. max.

Optical Crosstalk1)

1) Optical Crosstalk is defined as

with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and

IDet,1: the photocurrent without PF, but 0.5 PF, max. optical input power, λ = 1310 nm.

CRT –22 dB

End of Life Time Characteristics

Parameter Symbol Limit Values Unit

min. max.

Threshold current at T = Tmax Ith 60 mA

Current above threshold, over full

temperature range, at Imon, ref = Imon

(T = 25°C, PF = 0.5 PF, max., BOL)

∆IF770

Tracking Error TE –1.5 1.5 dB

Detector Dark Current, VR = 2 V, T = Tmax IR400 nA

Monitor Dark Current, VR = 2 V, T = Tmax IR1µA

CRT dB[]10 IDet.0

IDet.1

------------

log×=

SBM52214x

Fiber Data

Data Sheet 8 2002-05-01

Fiber Data

The mechanical fiber characteristics are described in the following table.

Fiber Characteristics

Parameter Limit Values Unit

min. typ. max.

Mode Field Diameter 8 9 10 µm

Cladding Diameter 123 125 127

Mode Field/Cladding Concentricity Error 1

Cladding Non-circularity 2 %

Mode Field Non-circularity 6

Cut off Wavelength 1270 nm

Jacket Diameter 0.8 1 mm

Bending Radius 30

Tensile Strength Fiber Case 5 N

Length 0.8 1.2 m

SBM52214x

Eye Safety

Data Sheet 9 2002-05-01

Eye Safety

Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams.

Especially do not look directly into the laser diode or the collimated laser beam when the

diode is activated.

Class 3B Laser Product According to IEC 60825-1

Figure 5 Required Labels

Class IIIb Laser Product According to FDA Regulations Complies with

21 CFR 1040.10 and 1040.11

Figure 6 Required Label

Laser Data

Wavelength 1310 nm

Maximum total output power less than 50 mW

Beam divergence (1/e2)10°

INVISIBLE LASER RADIATION

AVOID EXPOSURE TO BEAM

Class 3B Laser Product

SEMICONDUCTOR LASER

INVISIBLE RADIATION

CLASS IIIb LASER PRODUCT

LASER RADIATION - AVOID

DIRECT EXPOSURE TO BEAM

SBM52214x

Package Outlines

Data Sheet 10 2002-05-01

Package Outlines

Figure 7

Connector Options

Model Type

SBM52214G

SBM51214G

SM FC/PC

SBM52214N

SBM51214N

SM SC/PC 0°

SBM52214Z

SBM51214Z

SM without connector

connector type

1) 1mm above TO-bottom

Dimensions in mm

Edition 2002-05-01

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

D-81541 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding

circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

For questions on technology, delivery and prices please contact the Infineon

Technologies Offices in Germany or the Infineon Technologies Companies and

Representatives worldwide: see our webpage at http://www.infineon.com.

SBM52214x

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