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FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT Features General Description * High Current Capability Using innovative field stop trench IGBT technology, Fairchild's new series of field stop trench IGBTs offer the optimum performance for hard switching application such as UPS, welder and PFC applications. * Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A * High Input Impedance * Fast Switching * RoHS Compliant Applications * UPS, welder, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Description Ratings Unit Collector to Emitter Voltage 1000 V Gate to Emitter Voltage 25 V Transient Gate to Emitter Voltage 30 V 80 A Collector Current @ TC = 25oC Collector Current @ TC = 100oC 40 A Pulsed Collector Current @ TC = 25oC 120 A Diode Forward Current @ TC = 25oC 80 A Diode Forward Current @ TC = 100oC 40 A o Pulsed Diode Forward Current @ TC = 25 C 120 A Maximum Power Dissipation @ TC = 25oC 333 W Maximum Power Dissipation @ TC = 100oC 166 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds W -55 to +175 o -55 to +175 oC o 300 C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o RJC(IGBT) Thermal Resistance, Junction to Case - 0.45 RJC(Diode) Thermal Resistance, Junction to Case - 0.8 oC/W RJA Thermal Resistance, Junction to Ambient - 40 o (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 1 C/W C/W www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT May 2014 Device Marking Device Package Reel Size Tape Width Quantity FGH40T100SMD FGH40T100SMD TO-247 A03 - - 30ea FGH40T100SMD FGH40T100SMD_F155 TO-247 G03 - - 30ea Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1000 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1000 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 500 nA 4.2 5.3 6.5 V On Characteristics VGE(th) G-E Threshold Voltage IC = 250 uA, VCE = VGE IC = 40 A, VGE = 15 V - 1.9 2.3 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, TC = 175oC - 2.4 - V - 3980 5295 pF - 124 165 pF - 76 115 pF Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 29 38 ns tr Rise Time - 42 55 ns td(off) Turn-Off Delay Time - 285 371 ns tf Fall Time - 23 30 ns Eon Turn-On Switching Loss - 2.35 3.1 mJ Eoff Turn-Off Switching Loss - 1.15 1.5 mJ VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 3.5 4.6 mJ td(on) Turn-On Delay Time - 27 36 ns tr Rise Time - 49 64 ns td(off) Turn-Off Delay Time - 285 371 ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.9 2.5 mJ Ets Total Switching Loss - 6.3 8.2 mJ Qg Total Gate Charge - 265 398 nC Qge Gate to Emitter Charge - 32 48 nC Qgc Gate to Collector Charge - 135 203 nC (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 175oC VCE = 600 V, IC = 40 A, VGE = 15 V 2 - 20 26 ns - 4.4 5.7 mJ www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25C unless otherwise noted Test Conditions IF = 40 A IF =40 A, dIF/dt = 200 A/s Qrr Diode Reverse Recovery Charge (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 Min. Typ. Max TC = 25oC - 3.4 4.4 TC = 175oC - 2.6 - TC = 25oC - 60 78 o TC = 175 C - 256 - TC = 25oC - 185 260 - 1512 - TC = 3 175oC Unit V ns nC www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Electrical Characteristics of Diode Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 120 20V o 20V o TC = 25 C TC = 175 C 12V 12V 15V Collector Current, IC [A] 100 Collector Current, IC [A] 120 15V 80 10V 60 40 90 10V 60 30 VGE = 8V 20 VGE = 8V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 0 Figure 3. Typical Saturation Voltage Characteristics 4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V o Collector Current, IC [A] 6 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 120 TC = 25 C 90 o TC = 175 C 60 30 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 Figure 5. Saturation Voltage vs. VGE 80A 3 40A 2 IC = 20A 50 75 100 125 150 o Case Temperature, TC [ C] 175 Figure 6. Saturation Voltage vs. VGE 20 20 Common Emitter o Collector-Emitter Voltage, VCE V 16 12 8 40A Common Emitter ] [16 TC = 25 C 80A 4 IC = 20A 0 Common Emitter VGE = 15V 1 25 0 Collector-Emitter Voltage, VCE [V] 2 4 Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 8 80A 40A 4 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 4 20 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics 15 10000 Gate-Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes 100 Cres Common Emitter VGE = 0V, f = 1MHz 12 400V 9 6 3 Common Emitter o o TC = 25 C 10 0.1 VCC = 600V 200V TC = 25 C 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 50 100 150 200 Gate Charge, Qg [nC] 250 300 Figure 10. Turn-off Characteristics vs. Gate Resistance 200 2000 1000 100 Switching Time [ns] Switching Time [ns] td(off) tr Common Emitter VCC = 600V, VGE = 15V IC = 40A td(on) o TC = 25 C 100 tf 10 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 25 C o o TC = 175 C TC = 175 C 10 1 0 10 20 30 40 Gate Resistance, RG [ ] 50 0 Figure 11. Switching Loss vs. Gate Resistance 10 20 30 40 Gate Resistance, RG [ ] 50 Figure 12. Turn-on Characteristics vs. Collector Current 10 1000 Eon Common Emitter VGE = 15V, RG =10 Switching Time [ns] Switching Loss [mJ] o TC = 25 C Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 175 C tr 100 td(on) o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 10 20 50 Gate Resistance, RG [ ] (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 30 40 50 60 70 80 Collector Current, IC [A] 5 www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current 15 1000 10 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 10 1 Eoff Common Emitter VGE = 15V, RG = 10 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 1 20 0.1 30 40 50 60 70 80 20 30 40 50 60 Figure 15. Load Current Vs. Frequence 80 Figure 16. SOA Characteristics 300 100 100 VCC = 600V 10s load Current : peak of square wave 100s Collector Current, Ic [A] ] Collector Current, IC A 70 Collector Current, IC [A] Collector Current, IC [A] 50 1ms 10 ms DC 10 1 *Notes: 0.1 o 1. TC = 25 C Duty cycle : 50% o 2. TJ = 175 C 3. Single Pulse o T = 125 C C 0.01 Powe Dissipation = 111 W 0 1k 10k 100k 1 1M Switching Frequency, f [Hz] Figure 17. Forward Characteristics 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 18. Reverse Recovery Current 80 21 Reverse Recovery Currnet, Irr [A] o Forward Current, IF [A] o Tc = 175 C o Tc = 75 C 10 o Tc = 25 C o Tc = 25 C o Tc = 75 C --o TC = 25 C 18 T = 175oC C diF/dt = 200A/s 15 12 diF/dt = 100A/s 9 diF/dt = 200A/s 6 diF/dt = 100A/s 3 Tc = 175 C 1 0 1 2 3 Forward Voltage, VF [V] (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 4 0 5 0 6 20 40 60 Forward Current, IF [A] 80 www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 19. Reverse Recovery Time Figure 20. Stored Charge 360 2500 o o o 300 TC = 175 C Stored Recovery Charge, Qrr [nC] Reverse Recovery Time, trr [ns] TC = 25 C --- 240 180 diF/dt = 200A/s diF/dt = 100A/s 120 60 0 TC = 25 C o TC = 175 C 2000 1500 1000 diF/dt = 200A/s diF/dt = 100A/s 500 0 0 20 40 60 80 0 20 Forward Current, IF [A] 40 60 80 Forward Current, IF [A] Figure 21. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 PDM 0.01 0.01 t1 t2 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] Figure 22.Transient Thermal Impedance of Diode Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 7 www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB (Active) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 Dimensions in Millimeters (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 8 www.fairchildsemi.com FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3 (c)2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C5 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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