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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
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©2012 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
May 2014
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
V
CES
Collector to Emitter Voltage 1000 V
V
GES
Gate to Emitter Voltage ± 25 V
Transient Gate to Emitter Voltage ± 30 V
I
C
Collector Current @ T
C
= 25
o
C 80 A
Collector Current @ T
C
= 100
o
C 40 A
I
CM (1)
Pulsed Collector Current @ T
C
= 25
o
C 120 A
I
F
Diode Forward Current @ T
C
= 25
o
C 80 A
Diode Forward Current @ T
C
= 100
o
C 40 A
I
FM (1)
Pulsed Diode Forward Current @ T
C
= 25
o
C 120 A
P
D
Maximum Power Dissipation @ T
C
= 25
o
C 333 W
Maximum Power Dissipation @ T
C
= 100
o
C 166 W
T
J
Operating Junction Temperature -55 to +175
o
C
T
stg
Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300
o
C
Symbol Parameter Typ. Max. Unit
R
θJC
(IGBT) Thermal Resistance, Junction to Case - 0.45
o
C/W
R
θJC
(Diode) Thermal Resistance, Junction to Case - 0.8
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient - 40
o
C/W
G
E
C
E C
G
COLLECTOR
(FLANGE)
FGH40T100SMD
1000 V, 40 A Field Stop Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
= 1.9 V(Typ.) @ I
C
= 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• UPS, welder, PFC
General Description
Using innovative field stop trench IGBT technology, Fairchild’s
new series of field stop trench IGBTs offer the optimum perfor-
mance for hard switching application such as UPS, welder and
PFC applications.
©2012 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGH40T100SMD FGH40T100SMD TO-247 A03 - - 30ea
FGH40T100SMD FGH40T100SMD_F155 TO-247 G03 - - 30ea
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 1 mA 1000 - - V
∆BV
CES
∆T
J
Temperature Coefficient of Breakdown
Voltage V
GE
= 0 V, I
C
= 250 uA - 0.6 - V/
o
C
I
CES
Collector Cut-Off Current V
CE
= V
CES
, V
GE
= 0 V - - 1000 µA
I
GES
G-E Leakage Current V
GE
= V
GES
, V
CE
= 0 V - - ±500 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage I
C
= 250 uA, V
CE
= V
GE
4.2 5.3 6.5 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 40 A
,
V
GE
= 15 V
- 1.9 2.3 V
I
C
= 40 A
,
V
GE
= 15 V,
T
C
= 175
o
C- 2.4 - V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30 V
,
V
GE
= 0 V,
f = 1 MHz
- 3980 5295 pF
C
oes
Output Capacitance - 124 165 pF
C
res
Reverse Transfer Capacitance - 76 115 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 40 A,
R
G
= 10 Ω, V
GE
= 15 V,
Inductive Load, T
C
= 25
o
C
- 29 38 ns
t
r
Rise Time - 42 55 ns
t
d(off)
Turn-Off Delay Time - 285 371 ns
t
f
Fall Time - 23 30 ns
E
on
Turn-On Switching Loss - 2.35 3.1 mJ
E
off
Turn-Off Switching Loss - 1.15 1.5 mJ
E
ts
Total Switching Loss - 3.5 4.6 mJ
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 40 A,
R
G
= 10 Ω, V
GE
= 15 V,
Inductive Load, T
C
= 175
o
C
- 27 36 ns
t
r
Rise Time - 49 64 ns
t
d(off)
Turn-Off Delay Time - 285 371 ns
t
f
Fall Time - 20 26 ns
E
on
Turn-On Switching Loss - 4.4 5.7 mJ
E
off
Turn-Off Switching Loss - 1.9 2.5 mJ
E
ts
Total Switching Loss - 6.3 8.2 mJ
Q
g
Total Gate Charge
V
CE
= 600 V, I
C
= 40 A,
V
GE
= 15 V
- 265 398 nC
Q
ge
Gate to Emitter Charge - 32 48 nC
Q
gc
Gate to Collector Charge - 135 203 nC
©2012 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Electrical Characteristics of Diode
T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
V
FM
Diode Forward Voltage I
F
= 40 A T
C
= 25
o
C - 3.4 4.4 V
T
C
= 175
o
C - 2.6 -
t
rr
Diode Reverse Recovery Time
I
F
=40 A, dI
F
/dt = 200 A/µs
T
C
= 25
o
C - 60 78 ns
T
C
= 175
o
C - 256 -
Q
rr
Diode Reverse Recovery Charge T
C
= 25
o
C - 185 260 nC
T
C
= 175
o
C - 1512 -
©2012 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0 2 4 6 8 10
0
20
40
60
80
100
120
V
GE
= 8V
20V T
C
= 25
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0 2 4 6
0
30
60
90
120
V
GE
= 8V
20V
T
C
= 175
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
012345
0
30
60
90
120
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 175
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
25 50 75 100 125 150 175
1
2
3
4
80A
40A
I
C
= 20A
Common Emitter
V
GE
= 15V
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
o
C]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 20A
40A 80A
Common Emitter
T
C
= 25
o
C
Collector-Emitter Voltage
,
VCE [V]
Gate-Emitter Voltage, V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
80A
I
C
= 20A
40A
Common Emitter
T
C
= 175
o
C
Collector-Emitter Voltage, V
CE
[
[[
[
V
]
]]
]
Gate-Emitter Voltage, V
GE
[V]
©2012 Fairchild Semiconductor Corporation
5
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
0.1 1 10
10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
30
0 50 100 150 200 250 300
0
3
6
9
12
15
V
CC
= 600V
200V
Common Emitter
T
C
= 25
o
C
400V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
0 10 20 30 40 50
10
100
200
Switching Time [ns]
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25
o
C
T
C
= 175
o
C
t
d(on)
t
r
Gate Resistance, R
G
[
[[
[
Ω
ΩΩ
Ω
]
]]
]
0 10 20 30 40 50
1
10
100
1000
2000
Switching Time [ns]
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Gate Resistance, R
G
[
[[
[
Ω
ΩΩ
Ω
]
]]
]
20 30 40 50 60 70 80
10
100
1000
Common Emitter
V
GE
= 15V, R
G
=10
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, I
C
[A]
0 10 20 30 40 50
0.1
1
10
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
©2012 Fairchild Semiconductor Corporation
6
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current Vs. Frequence Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, RG = 10
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
20 30 40 50 60 70 80
0.1
1
10
15
Common Emitter
V
GE
= 15V, R
G
= 10
Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Collector Current, I
C
[A]
1 10 100 1000
0.01
0.1
1
10
100
300
2000
1ms
10 ms
DC
*Notes:
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
10
µ
µµ
µ
s
100
µ
µµ
µ
s
Collector Current, I
c
[A]
Collector-Emitter Voltage, V
CE
[V]
1k 10k 100k 1M
0
50
100
Duty cycle : 50%
T
C
= 125
oC
Powe Dissipation = 111 W
VCC = 600V
load Current : peak of square wave
Collector Current, I
C
A
]
]]
]
Switching Frequency, f [Hz]
0 1 2 3 4 5
1
10
80
Tc = 17
5
o
C
Tc = 7
5
o
C
Tc = 2
5
o
C
Tc = 7
5
o
C
---
Tc = 17
5
o
C
Tc = 2
5
o
C
Forward Current, I
F
[A]
Forward Voltage, V
F
[V]
0 20 40 60 80
0
3
6
9
12
15
18
21
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 100A/
µ
µµ
µ
s
di
F
/dt = 200A/
µ
µµ
µ
s
di
F
/dt = 100A/
µ
µµ
µ
s
di
F
/dt = 200A/
µ
µµ
µ
s
Reverse Recovery Currnet, I
rr
[A]
Forward Current, I
F
[A]
©2012 Fairchild Semiconductor Corporation
7
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22.Transient Thermal Impedance of Diode
0 20 40 60 80
0
60
120
180
240
300
360
T
C
= 25
o
C
T
C
= 175
o
C
---
di
F
/dt = 200A/
µ
µµ
µ
sdi
F
/dt = 100A/
µ
µµ
µ
s
Reverse Recovery Time, t
rr
[ns]
Forward Current, I
F
[A]
0 20 40 60 80
0
500
1000
1500
2000
2500
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 200A/
µ
µµ
µ
sdi
F
/dt = 100A/
µ
µµ
µ
s
Stored Recovery Charge, Q
rr
[nC]
Forward Current, I
F
[A]
0.00001 0.0001 0.001 0.01 0.1
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
0.00001 0.0001 0.001 0.01 0.1
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
©2012 Fairchild Semiconductor Corporation
8
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 23. TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB (Active)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
9
www.fairchildsemi.com
FGH40T100SMD Rev. C5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
©2012 Fairchild Semiconductor Corporation
10
www.fairchildsemi.com
FGH40T100SMD Rev. C5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP
®
*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficentMax™
ESBC™
Fairchild
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET
®
Global Power Resource
SM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver
®
OptoHiT™
OPTOLOGIC
®
OPTOPLANAR
®
PowerTrench
®
PowerXS™
Programmable Active Droop™
QFET
®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
®
STEALTH™
SuperFET
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
®
SyncFET™
Sync-Lock™
®*
TinyBoost
®
TinyBuck
®
TinyCalc™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT
®
*
µSerDes™
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
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Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
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