_SAMSUNG SEMICONDUCTOR Inc JHE D Bf esesis2 0006 ib4 4 ff ws-1 KSC2786 === ~~ NPN EPITAXIAL SILICON TRANSISTOR mai TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR T0-928 * High Current-Gain-Bandwidth Product fy =@00MHz (Typ) * High Power Gain Gpe=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symbol Rating Unit Collector-Bass Voltage Vero 30 Vv Collector-Emitter Voltage Veco 20 v . Emitter-Base Voltage Veso 4 v Collector Current Ie 20 mA Collector Dissipation Po 250 mw Junction Temperature Tj 150 C Storage Temperature ; Tsig ~55~ 150 C 1, Emitter 2. Collector 3, Base ELECTRICAL CHARACTERISTICS (Ta =25C) Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BVcao lo =10pA, fe =0 _30 Vv Coillector-Emitter Breakdown Voltage | BVceo Ic =5mMA, 19 =0 20 Vv Emitter-Base Breakdown Voltage BVeso le =-10pA, Io =0 4 v Collector Cut-off Currant lego Vea =30V, le =0 0.1 pA Emitter Cut-off Current leo Ves =4V, Ic =0 0.1 pA DC Current Gain Hee Vee =6V, Io=1mA 40 240 Base-Emitter On Voltage Vae (on) Vee =6V, tc=1mA 0.72 Vv Collector-Emitter Saturation Voltage Vee (sat) Io =10mA, la=1mA 0.4 0.3 v Current-Gain-Bandwidth Product fr Vce-=6V, Ic=tmA 400 600 MHz Output Capacitance Cob Vca =6V, le =0 1.2 pF f=1MHz , Collector-Base Time Constant Cerbb Vee =6V, le=1mA 12 15 ps . f=31.9MHz , Common Source Noise Figure NF Vee =6V, le=-1mA 3.0 5.0 dB - Rs =500, f=100MHz Power Gain Gpe Vce =6V, le=1MA 18 22 . dB Rs =50f, f=100MHz (yp) hre CLASSIFICATION Classification R O Y re 40-80 70-140 120-240 rH SAMSUNG SEMICONDUCTOR 234SAMSUNG SEMICONDUCTOR INC 4e D ff 7964242 DOObIES & KSC2786 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC . - BASE-EMITTER ON VOLTAGE 0 I vw i 2 3s 1 8 ss i 8 g 05 4 2 3 ol 4 o3 2 o at Qo 2 4 6 8 wm 2 4 1 ww 2 0 a2 o4 08 on 10 42 Vea (V}, COLLECTOR-EMITTER VOLTAGE Vea (), GASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIOTH PRODUCT 10000, $000 g g heu, DC CURRENT GAIN 8 ta, commen aamannownri noover g 8 @3 3 ost a3 5 30 nn) - 30 50 Wo ke (rmA}, COLLECTOR CURRENT te (mA}, COLLECTOA CURRENT BASE-EMITTER SATURATION VOLTAGE COLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE aa ca (ent), Vem (eat) (Vj, SATURATION VOLTAGE ga Igfma), COLLECTOR CURRENT _ Vos (}, COLLECTOR-BASE VOLTAQE 8g samsuNc SEMICONDUCTOR ; "236te enna eens nme ne a : SAMSUNG SEMICONDUCTOR INC KSC2786 INPUT ADMITTANCE (yie} vs. COLLECTOR CURRENT gir}, CONDUCTANCE bieimS}, SUSCEPTANCE 0.1 0.02 0.1 0.2 0.8 i 2 5 10 20 50 100 k{ma}, COLLECTOR CURRENT REVERSE TRANSFER ADMITTANCE (yre) vs, COLLECTOR CURRENT o1 02 05 #1 2 5 10 b{mA}, COLLECTOR CURRENT INPUT ADMITTANCE (yib) vs. COLLECTOR CURRENT 8 3 8 ga{mS), CONDUCTANCE Da{mS), SUSCEPTANCE 8 8 10 5 2 1 oro2 a5 2 5 10 20 S80 10 k{mA), COLLECTOR CURRENT LYE D NPN EPITAXIAL SILICON TRANSISTOR J eacuz42 cooLtee 3 T-31-17 FORWARD TRANSFER ADMITTANCE {yte) vs, COLLECTOR CURRENT g 88 n GtelenS}, CONDUCTANCE bee(mS}, SUSCEPTANCE g 1 Or a2 O05 TF 2 6 0 20 So 100 ig{mA), COLLECTOR CURRENT OUTPUT ADMITTANCE (yoe) va. COLLECTOR CURRENT 01 0.1 6.2 o5 ' 2 5 10 20 50 timA}, COLLECTOR CURRENT FORWARD TRANSFER ADMITTANCE (yf) vs. COLLECTOR CURRENT geimS), CONDUCTANCE be(ms), SUSCEPTANCE & 1 0102 #08 1 2 & 10 20 6&0 100 fcfmA}, COLLECTOR CURRENT cee SAMSUNG SEMICONDUCTOR 236SAMSUNG SEMICONDUCTOR . INC KSC2786 _ hue o ff 7ae4z42 ocoLs? 1 - NPN EPITAXIAL SILICON TRANSISTOR REVERSE TRANSFER ADMITTANCE (yrb} vs. COLLECTOR CURRENT ebimS), CONDUCTANCE bet}, SUSCEPTANCE 2 5 10 So 100 L{mA}, COLLECTCA CURRENT FORWARD TRANSFER ADMITTANCE (ytfe} vs. FREQUENCY 1 mA a 3 gh(mS), CONDUCTANCE bem), SUSCEPTANCE 8 3 10 20 so 100 200 $00 861000 MHz}, FREQUENCY POWER GAIN AND NOISE FIGURE s. CURRENT Vce=8 V NF(gB), NOISE FIGURE s Gp{a), POWER GAIN -0.08:-0.1 -03 71 -3 -10 feimA}, EMITTER CURRE} T-31-17 REVERS TRANSFER ADMITTANCE (yre) va. FREQUENCY 10 20 KMHa}, FREQUENCY OUTPUT AOMITANCE (yoe) va. FREQUENCY 10 20 so 100 + 200 500. 1000 A(MH2),. FREQUENCY INPUT ADMITTANCE (yie) vs. FREQUENCY s oN a a o 0 geimS), CONDUCTANCE bietmS), SUSCEPTANCE 0.8 0.2 of 10 20 50 1c0 200 s00 1000 KMH2), FREQUENCY be SAMSUNG SEMICONDUCTOR 237.= Fr SAMSUNG SEMICONDUCTOR INC LYE D Beesuyn4e2 go0b9b8 2 KSC2786 NPN EPITAXIAL SILICON TRANSISTOR T-31-17 1OOMH2 Gps, NF TEST CIRCINT sop be SAMSUNG SEMICONDUCTOR _ 238