BPW46 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: leaded * Package form: side view * Dimensions (L x W x H in mm): 5 x 3 x 6.4 * Radiant sensitive area (in mm2): 7.5 * High photo sensitivity * High radiant sensitivity * Suitable for visible and near infrared radiation * Fast response times 94 8632 * Angle of half sensitivity: = 65 * Compliant to RoHS Directive to 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 BPW46 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation. APPLICATIONS * High speed photo detector PRODUCT SUMMARY COMPONENT Ira (A) (deg) 0.1 (nm) 50 65 430 to 1100 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPW46 Note * Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE BPW46 Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.7, 23-Nov-11 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 C Tamb - 40 to + 100 C C Tstg - 40 to + 100 t5s Tsd 260 C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Document Number: 81524 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW46 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage IR = 100 A, E = 0 V(BR) 60 TYP. MAX. UNIT V VR = 10 V, E = 0 Iro 2 VR = 0 V, f = 1 MHz, E = 0 CD 70 VR = 3 V, f = 1 MHz, E = 0 CD 25 Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K EA = 1 klx Ik 70 A Ee = 1 mW/cm2, = 950 nm Ik 47 A Temperature coefficient of Vk Ee = 1 mW/cm2, = 950 nm TKVk 0.1 %/K EA = 1 klx, VR = 5 V Ira 75 A Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 50 A deg Reverse dark current Diode capacitance Short circuit current 40 30 nA pF 40 pF Angle of half sensitivity 65 Wavelength of peak sensitivity p 900 nm 0.1 430 to 1100 nm VR = 10 V, = 950 nm NEP 4 x 10-14 W/Hz Rise time VR = 10 V, RL = 1 k, = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 k, = 820 nm tf 100 ns Range of spectral bandwidth Noise equivalent power BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (C) VR = 5 V = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.7, 23-Nov-11 1.4 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81524 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW46 www.vishay.com Vishay Semiconductors 80 CD - Diode Capacitance (pF) Ira - Reverse Light Current (A) 1000 100 10 VR = 5 V = 950 nm 1 0.1 0.01 0.1 1 40 20 0 0.1 10 Ee - Irradiance (mW/cm2) 94 8417 E=0 f = 1 MHz 60 Fig. 3 - Reverse Light Current vs. Irradiance 1 10 100 VR - Reverse Voltage (V) 948407 Fig. 6 - Diode Capacitance vs. Reverse Voltage S()rel - Relative Spectral Sensitivity 100 10 VR = 5 V 1 0.1 101 0.8 0.6 0.4 0.2 0 102 103 104 EA - Illuminance (lx) 94 8418 1.0 350 550 Fig. 4 - Reverse Light Current vs. Illuminance 750 Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 0 100 10 20 30 1 mW/cm2 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (A) 1150 950 - Wavelength (nm) 94 8420 0.5 mW/cm2 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 = 950 nm 1 0.1 94 8419 1 10 0.9 50 0.8 60 VR - Reverse Voltage (V) 70 0.7 100 Fig. 5 - Reverse Light Current vs. Reverse Voltage Rev. 1.7, 23-Nov-11 40 1.0 - Angular Displacement Ira - Reverse Light Current (A) 1000 80 0.6 0.4 0.2 0 94 8406 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 81524 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW46 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C technical drawings according to DIN specifications 3 - 0.2 A - 0.2 (0.7) 7.2 0.2 (3.2) Sensitive area 20.2 < 0.7 - 0.8 9.3 0.2 6.4 0.3 5 < 0.65 Area not plane 1.5 0.45 0.05 2.54 nom. 0.95 0.2 0.4 0.05 Drawing-No.: 6.544-5109.01-4 Issue:1; 01.07.96 96 12196 Rev. 1.7, 23-Nov-11 Document Number: 81524 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000