IRF510, SiHF510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * * * * * * * 100 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.54 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D Available RoHS* DESCRIPTION TO-220AB G Dynamic dV/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF510PbF SiHF510-E3 IRF510 SiHF510 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS 20 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 C TC = 100 C Currenta ID IDM Linear Derating Factor UNIT V 5.6 4.0 A 20 0.29 W/C mJ Single Pulse Avalanche Energyb EAS 100 Repetitive Avalanche Currenta IAR 5.6 A Repetitive Avalanche Energya EAR 4.3 mJ Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 43 W dV/dt 5.5 V/ns TJ, Tstg - 55 to + 175 300d C 10 lbf * in 1.1 N*m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12). c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT C/W SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 A 100 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.12 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 150 C - - 250 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage A - - 0.54 gfs VDS = 50 V, ID = 3.4 Ab 1.3 - - S Input Capacitance Ciss VGS = 0 V, - 180 - Output Capacitance Coss VDS = 25 V, - 81 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 15 - Total Gate Charge Qg ID = 5.6 A, VDS = 80 V - - 8.3 Gate-Source Charge Qgs VDS = 10 V, - - 2.3 - - 3.8 - 6.9 - - 16 - - 15 - - 9.4 - - 4.5 - - 7.5 - - - 5.6 - - 20 - - 2.5 V - 100 200 ns - 0.44 0.88 C Drain-Source On-State Resistance Forward Transconductance RDS(on) ID =3.4 Ab VGS = 10 V Dynamic Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10 V see fig. 6 and 13b VDD = 50 V, ID = 5.6 A Rg = 24 , RD = 8.4, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 5.6 A, VGS = 0 Vb TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/sb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 100 4.5 V ID, Drain Current (A) ID, Drain Current (A) 101 101 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 175 C 100 20 s Pulse Width TC = 25 C 10-1 100 4 4.5 V 20 s Pulse Width TC = 175 C 10-1 91015_02 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 175 C Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 100 Top 5 VGS, Gate-to-Source Voltage (V) 91015_03 Fig. 1 - Typical Output Characteristics, TC = 25 C VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 20 s Pulse Width VDS = 50 V 10-1 101 VDS, Drain-to-Source Voltage (V) 91015_01 101 25 C Top 3.0 ID = 5.6 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 91015_04 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 400 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 320 240 Ciss 160 Coss 80 Crss ISD, Reverse Drain Current (A) Vishay Siliconix 175 C 100 10-1 VGS = 0 V 0 100 0.5 101 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage VDS = 20 V 8 4 0 91015_06 4 6 8 QG, Total Gate Charge (nC) 10 1.2 100 s 5 1 ms 2 1 10 ms 5 TC = 25 C TJ = 175 C Single Pulse 0.1 10 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.1 2 2 For test circuit see figure 13 2 1.0 Operation in this area limited by RDS(on) VDS = 80 V VDS = 50 V 0 0.9 VSD, Source-to-Drain Voltage (V) 5 12 0.8 102 ID = 5.6 A 16 0.7 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 20 0.6 91015_07 VDS, Drain-to-Source Voltage (V) 91015_05 25 C 1 91015_08 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 Vishay Siliconix RD VDS VGS 6.0 D.U.T. RG + - VDD ID, Drain Current (A) 5.0 10 V Pulse width 1 s Duty factor 0.1 % 4.0 3.0 Fig. 10a - Switching Time Test Circuit 2.0 VDS 1.0 90 % 0.0 25 50 75 100 125 150 175 TC, Case Temperature (C) 91015_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 0 - 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 PDM t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91015_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - IAS V DD 10 V A 0.01 tp VDS IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 300 ID 2.3 A 4.0 A Bottom 5.6 A Top 250 200 150 100 50 VDD = 25 V 0 25 91015_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG 10 V 12 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF510, SiHF510 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91015. Document Number: 91015 S11-0511-Rev. B, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q OP 3 2 L(1) 1 *M DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 0.055 F 1.14 1.40 0.045 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 0.552 L 13.35 14.02 0.526 L(1) 3.32 3.82 0.131 0.150 OP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X10-0416-Rev. M, 01-Nov-10 DWG: 5471 b(1) L INCHES Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) Document Number: 71195 Revison: 01-Nov-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000