6MBI35S-120 IGBT Modules IGBT MODULE ( S series) 1200V / 35A 6 in one-package Features * Compact package * P.C.board mount * Low VCE(sat) Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply * Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25C current Tc=80C 1ms Tc=25C Tc=80C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 20 50 35 100 70 35 70 240 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A 1 (G u ) A ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time t No 1 0 (E w) 1 5 (V ) 1 4 (W ) 3 (G x) 7 (G y) 1 1 (G z) 4 (E x ) 8 (E y) 1 2 (E z) . 1 7 (N ) Characteristics Min. Typ. - - - - 5.5 7.2 - 2.3 - 2.8 - 4200 - 875 - 770 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.5 - 2.0 - - Max. 1.0 0.2 8.5 2.65 - - - - 1.2 0.6 - 1.0 0.3 3.3 - 0.35 Characteristics Min. Typ. Max. o c e r 9 (G w ) 6 (E v) 1 6 (U ) nd e mm Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage 5 (G v) 2 (E u) A A W C C V N*m Electrical characteristics (Tj=25C unless otherwise specified) Symbol 1 3 (P ) de ew n for *1 : Recommendable value : 2.5 to 3.5 N*m (M5) Item Equivalent Circuit Schematic n sig Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=35mA Tj=25C VGE=15V, IC=35A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=35A VGE=15V RG=33 mA A V V Tj=25C Tj=125C IF=35A V IF=35A, VGE=0V pF s s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 - - - - - 0.05 0.52 0.90 - Conditions Unit IGBT FWD the base to cooling fin C/W C/W C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ 6MBI35S-120 IGBT Modules Characteristics Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 80 VGE= 20V 15V 12V VGE= 20V 15V 12V 60 Collector current : Ic [ A ] 60 Collector current : Ic [ A ] Tj= 125 C (typ.) 80 10V 40 20 10V 40 20 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage o 80 Tj= 25 C (typ.) 10 o o Tj= 125 C Tj= 25 C 8 40 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 60 ew n for e m m 20 . de 6 4 n sig Ic= 70A nd 0 0 1 2 eco 3 4 2 Ic= 17.5A 0 5 5 r Collector - Emitter voltage : VCE [ V ] t No Ic= 35A 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Dynamic Gate charge (typ.) Capacitance vs. Collector-Emitter voltage (typ.) o o Vcc=600V, Ic=35A, Tj= 25 C VGE=0V, f= 1MHz, Tj= 25 C 10000 1000 25 800 20 600 15 400 10 200 5 1000 Coes Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 100 200 Gate charge : Qg [ nC ] http://store.iiic.cc/ 300 0 400 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] Cies 6MBI35S-120 IGBT Modules Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=33,Tj=25oC Vcc=600V,VGE=15V, Rg=33,Tj=125oC 1000 1000 toff toff 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 500 ton tr 100 ton tr tf 100 tf 50 50 0 20 40 60 0 20 Collector current : Ic [ A ] 40 60 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V,Ic=35A,VGE=15V, Tj=25oC Vcc=600V,VGE=15V, Rg=33 5000 10 o 500 ton e m m 4 nd tr 100 tf 50 50 r Gate resistance : Rg [ t No eco 100 . de 6 ew n for toff 10 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 n sig o Eon(25 C) o Eoff(125 C) Eoff(25o)C 2 o Err(125 C) o Err(25 C) 0 500 0 20 ] 40 60 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area Vcc=600V,Ic=35A,VGE=15V,Tj=125oC o +VGE=15V, -VGE<15V, Rg>33,Tj<125 C = = = 25 100 Eon 80 Collector current : Ic [ A ] 20 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] Eon(125 C) 8 15 10 60 40 Eoff 5 20 Err 0 0 10 50 100 Gate resistance : Rg [ 500 ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 6MBI35S-120 IGBT Modules Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) Vcc=600V,VGE=15V, Rg=33 300 80 o o Tj=25 C Tj=125 C o trr(125 C) Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 60 40 20 100 o trr(25 C) o Irr(125 C) o Irr(25 C) 0 0 1 2 3 10 4 0 10 20 Forward on voltage : VF [ V ] 30 40 50 60 Forward current : IF [ A ] Transient thermal resistance 3 FWD IGBT o Thermal resistanse : Rth(j-c) [ C/W ] 1 . de 0.1 n sig ew n for M623 0.01 0.001 0.01 nd e mm 0.1 1 o c e r Pulse width : Pw [ sec ] Outline Drawings, mm t No 107.51 930.3 4-o6.10.3 15.24 16.02 2-o5.50.3 15.24 15.24 15.24 17 13 o2.60.1 3 12 27.60.3 + 0.5 0 930.3 A 1.150.2 10.2 1.50.3 2.50.3 11.43 11.43 11.43 11.43 11.43 o0.4 6.50.5 3.50.5 171 20.51 Section A-A 12 1 3.81 16.02 o2.250.1 A 0.80.2 320.3 11 41.91 451 69.60.3 Shows theory dimensions http://store.iiic.cc/