6MBI35S-120 IGBT Modules
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltage VGES
Collector Continuous Tc=25°C IC
current Tc=80°C
1ms Tc=25°C IC pulse
Tc=80°C
-IC
1ms -IC pulse
Max. power dissipation (1 device) PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage Vis
Screw torque Mounting *1
Rating
1200
±20
50
35
100
70
35
70
240
+150
-40 to +125
AC 2500 (1min.)
3.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
trr
– – 1.0
– – 0.2
5.5 7.2 8.5
– 2.3 2.65
– 2.8 –
– 4200 –
– 875 –
– 770 –
– 0.35 1.2
– 0.25 0.6
– 0.1 –
– 0.45 1.0
– 0.08 0.3
– 2.5 3.3
– 2.0 –
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=35mA
Tj=25°C VGE=15V, IC=35A
Tj=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=35A
VGE=±15V
RG=33Ω
Tj=25°C IF=35A, VGE=0V
Tj=125°C
IF=35A
mA
µA
V
V
pF
µs
V
µs
Electrical characteristics (Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*2
– – 0.52
– – 0.90
– 0.05 –
IGBT
FWD
the base to cooling fin
°C/W
°C/W
°C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
13(P)
17(N)
1(Gu)
2(Eu)
3(Gx)
5(Gv)
6(Ev)
16(U)
7(Gy)
15(V) 14(W)
9(Gw)
11(Gz)
10(Ew)
4(Ex) 8(Ey) 12(Ez)
IGBT MODULE ( S series)
1200V / 35A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inver ter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
6MBI35S-120 IGBT Modules
Characteristics
012345
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emitter voltage
Tj= 25oC (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
20
40
60
80
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emitter voltage
Tj= 125oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
20
40
60
80
Tj= 25oCTj= 125oC
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic= 17.5A
Ic= 35A
Ic= 70A
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
100
1000
10000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 100 200 300 400
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=35A, Tj= 25 oC
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
6MBI35S-120 IGBT Modules
0204060
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0204060
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
10 50 100 500
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Gate resistance : Rg [ Ω ]
Switching time : ton, tr, toff, tf [ nsec ]
0204060
0
2
4
6
8
10
Err(25 oC)
Eoff(25o)C
Eon(25 oC)
Err(125 oC)
Eoff(125 oC)
Eon(125 oC)
Switching loss vs. Collector current (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10 50 100 500
0
5
10
15
20
25
Switching loss vs. Gate resistance (typ.)
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ Ω ]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400
0
20
40
60
80
100
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
Vcc=600V,VGE=±15V, Rg=33Ω,Tj=125oC
Vcc=600V,VGE=±15V, Rg=33Ω,Tj=25oC
Vcc=600V,VGE=±15V , Rg=33Ω
Vcc=600V,Ic=35A,VGE=±15V, Tj=25oC
=
+VGE=15V , -VGE<15V, Rg>33Ω,Tj<125oC
==
Vcc=600V,Ic=35A,VGE=±15V,Tj=125oC
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
6MBI35S-120 IGBT Modules
Vcc=600V,VGE=±15V, Rg=33Ω
107.5
±1
93
±0.3
69.6
±0.3
93
±0.3
16.02 15.24 15.24 15.24 15.24
4-ø6.1
±0.3
2-ø5.5
±0.3
45
±1
41.91
32
±0.3
27.6
±0.3
11
+ 0.5
0
3.81
11.43 11.43 11.43 11.43 11.43
1.15
±0.2
ø0.4
ø2.6
±0.1
ø2.25
±0.1
20.5
±1
17
±1
3.5
±0.5
2.5
±0.3
1.5
±0.3
6.5
±0.5
1
±0.2
0.8
±0.2
12 3
Section A-A
AA
112
13
17
Shows theory dimensions
16.02
M623
Outline Drawings, mm
01234
0
20
40
60
80
Tj=25oC
Tj=125oC
Forward current vs. Forward on voltage (typ.)
Forward on voltage : VF [ V ]
0 102030405060
10
100
300
Irr(125oC)
Irr(25oC)
trr(25oC)
trr(125oC)
Reverse recovery characteristics (typ.)
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001 0.01 0.1 1
0.01
0.1
1
3
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ oC/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
