GaAs Infrared Emitter
OPE5594A
The OPE5594S is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm)
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame.
FEATURES
• High-output power
• Narrow beam angle
• High reliability and long term stability
• Available for pulse operating
APPLICATIONS
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMU M RATI NGS (Ta=25°C )
Item Symbol Rating Unit
Power Dissipation PD150
Forward current IF100
Pulse forward current 1IFP1.0 A
Reverse voltage VR5.0
Operating temp. Topr. -25~ +85
°
C
Soldering temp. 2 Tsol. 260
.
°
C
1.Duty ratio = 1/100, pulse width=0.1ms.
2.Lead Soldering Temperature (2
mm
from case for 5sec.).
ELECTRO-OPTICALCHARACTERISTICS (Ta=25°C)
Item Symbol Conditions Min. Typ. Max. Unit
Forward voltage VF I
F =100mA 1.4 1.7 V
Reverse current IR V
R= 5V 10
µ
A
Capacitance Ct f = 1
MHz
20
pF
Radiant intensity Ie IF=100mA 80 mW/
Peak emission wavelength p I
F= 50mA 940
nm
Spectral bandwidth 50% I
F= 50mA 45
nm
Half angle I
F=100mA ±10 deg.
2-0.5
24.0 Min
2.5
2.0
Anode
Cathode
8.7
7.7
1.3 Ma x
5.7
5.0
Tolerance : ±0.2m
m
GaAlAs Infrared Emitter OPE5594A
FOR WARD CURRENT Vs.
FORWARD VOLTAGE
100
50
30
20
10
5
4
3
2
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward Voltage VF(V)
Ta=25
RELATIVE RADIANT INTENSITY Vs.
AMBIE NT TE MP.
RELATIVE RADIANT INTENSITY Vs.
EMISSION WAV ELENGTH.
1.0
0.8
0.6
0.4
0.2
0.0
800 850 900 950 1000 1050
Emiss i on Wavelen
g
th
(
nm
)
Ta=25
3
2
1
0.8
0.5
0.3
0.2
0.1
-20 0 20 40 60 80 100
Ambient Temperatur e Ta (
)
IF=50mA
ANG U L A R DISPLA CE M EN T V s
RELATI
V
E RADIA
N
T I
N
TE
NS
ITY
20
°
30
°
40
°
50
°
60
°
70
°
80
°
-20
°
-30
°
-40
°
-50
°
-60
°
-70
°
-80
°
-90
°
-10
°
10
°
0
°
1.0 0.5 0 0.5 1.0
90
°
Relative Radiant intensity
Ta=25
RADIANT INTENSITY Vs.
FORWARD CURRENT.
FOR WARD CURRENT Vs.
AMBIENT TEMP.
100
80
60
40
20
0
-20 0 20 40 60 80 100
Ambient Temperature Ta(
)
Ta=25
400
200
100
50
30
10
5
3
1
0.5
0.3
0.1
1 3
5
10 30
5
0 100 2
00 500
Forward Current IF(mA)
Ta=25
