Surface Mount Switching Diode
Mechanical Data:
Features:
MMBL4448H
1N4448WS
WEITRON
WEITRON
SWITCHING DIODE
250m AMPERES
http://www.weitron.com.tw
SOD-323
SOD-323 Outline Dimensions
1.60 1.80
1.15 1.35
0.80 1.00
0.25 0.40
0.15REF
0.00 0.10
0.089 0.377
2.30 2.70
A
B
C
D
E
H
J
K
1
2
Lead(Pb)-Free
P b
MILLMETERS
Dim Min Max
* Fast Switching Speed
* Surface Mount Package Ideally Suited for Automatic Insertion
* For General Purpose Switching Applications
* High Conductance
* Case: SOD-323, Molded Plastic
* Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
* Polarity: Cathode Band
* Weight: 0.004 grams (approx)
Unit:mm
2. ANODE
PIN 1. CATHODE
1/3 26-Jul-06
100 VOLTS
http://www.weitron.com.tw
WEITRON
Maximum Ratings
(TA=25°C Unless Otherwise note)
Device Marking
Electrical Characteristics
(TA=25˚C Unless Otherwise note)
Off Characteristics
Rating Symbol Value Unit
Characterictics Symbol Max Unit
Forward Continuous Current
RMS Reverse Voltage
Average Recfified Output Current
VRM
IFM
100
500
250
V
V
mA
mA
A
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
PD
RθJA
TJ
315
-65 to +150
mW
K/W
°C
°C
Min
Forward Voltage
Reverse Voltage Leakage Current
VR=20V
VR=75V
Revarse Recover Time
IF=IR=10mA, Irr=0.1 x IR, RL=100Ω
VF
IR
Diode Capacitance
VR=0, f=1.0MHz CT
trr
4.0
4.0
V
µA
nA
pF
ns
Item Marking Eqivalent Circuitdiagram
1N4448WS , MMBL4448H T5
2
1
200
WEITRON
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Vlotage
VRRM
VRWM
VR
VR(RMS)
75
V
53
Non-Repetitive Peak Forward Surge Current
@ t=1.0µs
@ t=1.0s
IFSM
IO
4.0
2.0
IF=5mA
IF=10mA
IF=100mA
IF=150mA
25
2.5
2/3
Non-Repetitive Peak Reverse Voltage
Storage Temperature Tstg
+150
MMBL4448H
1N4448WS
26-Jul-06
0.72
0.855
1.00
1.25
0.62
-
-
-
-
Reverse Voltage Leakage Current
IR=10µA V(BR)R V-75
-
-
http://www.weitron.com.tw
WEITRON
WEITRON 3/3
Typical Characteristics
0
100
300
0 25 50 75 125 125 150
P
POI
T
A
P
I
S
S
I
D
RE
WO)
W
m(
N
d
,
AMBIENT TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
°
200 10
100
1
0.1
0 1000
800
200 400 600
F
,
IO)A
m(
T
NE
R
R
U
CD
RA
W
R
F
V , FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
F
Ta = -30 C°
Ta = 50 C°
Ta = 0 C°
Ta = 85 C°
Ta = 25 C°
0.10
1.0
10.0
0.01
0.001
020 40 60 80
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
R
Ta = 100 C°
Ta = 0 C°
Ta = 75 C°
Ta = 50 C
°
Ta = 25 C°
Ta = -30 C°
0 4 68
210
I , FORWARD CURRENT (mA)
Fig. 4 Reverse Recovery Time vs.
Forward Current
F
t
r
r)S
n(
E
M
I
T
Y
R
EV
O
CE
R
E
S
REVE
R
,
0
0.5
1.0
1.5
2.0
2.5
0 4
3
25
16
V , REVERSE VOLTAGE (V)
Fig. 5 Total Capacitance vs.
Reverse Voltage
R
)
F
p(
E
C
NA
T
I
CA
P
A
C
L
A
T
O
T
,
CT
0
1
2
3
4
f = 1MHz
MMBL4448H
1N4448WS
26-Jul-06
