Standard Power MOSFETs 2N6769, 2N6770 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 11A and 12A, 450V - 500V Toston = 0.5Q and 0.40Q Features: SOA is power-dissipation limited g Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance m@ Majority carrier device The 2N6769 and 2N6770 are n-channel enhancement-mode silicon-gate power MOS field-effect transistors designed for applications such as switching regulators, switching conver- ters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The 2N6769 and 2N6770 are supplied in the JEDEC TO- 204AA steel package. MAXIMUM RATINGS, Absolute-Maximum Values: *DRAIN-SOURCE VOLTAGE ........- 2c cece cece e eee e eee Voss *DRAIN-GATE VOLTAGE, Rgs = 1 MQ... eee cee eee Vper *GATE-SOURCE VOLTAGE ........... ccc c eee eee eet cence Ves DRAIN CURRENT, RMS Continuous lo At Te = 28C oo. c ec cccceeee eee eee At To = 100C oo ccc c cee eee eee e eee PUISEd 2... cece cee cee cece eee eeeeees lpm *POWER DISSIPATION Pr At Tc = 25C Above Tc = 25C, Derate Linearly ............... 00sec eee eee INDUCTIVE CURRENT, CLAMPED (L = 100uH) OPERATING AND STORAGE TEMPERATURE ............. Ti, Tstg *LEAD TEMPERATURE (0.063 in. or 1.6 mm from (ors yok (0) dia L-) Te *JEDEC REGISTERED DATA 3-500 File Number 1899 N-CHANNEL ENHANCEMENT MODE O LAD $s 92CS -33741 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN SOURCE (FLANGE ) O% Oo GATE 92cs- 376801 JEDEC TO-204AA 2N6769 2N6770 450 500 Vv 450 500 Vv +20 V ani 12 A 7 7.75 A 20 25 A 150 ______. WwW 1.2 WC 20 25 A -55 to +150 ~ C 300 CStandard Power MOSFETs 2N6769, 2N6770 . . 2 . : Electrical Characteristics @ T = 25C (Unless Otherwise Specified) Parameter Type Min, Typ. Max Units Test Conditions BVoss Orain Source Breakdown Voltage | 2N6769 450 - - Vv Veg 20 2N6770 500 - - v Ip =4.0mA Vesith) Gate Threshold Voltage ALL 2.0 - 4.0* Vv VYos= Yes. '!p1 mA '6ssF Gate Body Leakage Forward ALL - - 100 nA et = 20V lossp Gate Body Leakage Reverse ALL = ~ 100 nA Vos= ~20V oss Zero Gate Voltage Drain Current L - 0.1 1.0* mA Vos = 0.8 x Max. Rating, Ves70 AL = 0.2 | 40 | mA | Vog = Max. Rating. Vgg = 0, Te = 25C to 125C Vpston) Static Drain-Source On-State 2N6769 - - 6.0 Vv Vag = 10V. Ip = 114 Voltage 2 2n6770 | - 6.0" v Vag = 10, Ip = 12A Roston) Static Drain-Source On-State 2N6769 - 04 0.5 2 V@s = 10V, Ip = 7A Resistance oO ; 2N6770 = 03 | 04* 2 | Vgg = 10V, 1p = 7.754 Rosten) Static Drain-Source On-State 2N6769 - - 1 2 Ves = 10V, Ip = 7.0A, Teo = 125C Resistance oO - 2N6770 | - 0.88" 2 | Vgg= 10V, Ip = 7.75A, Te = 125C oF, Forward Transconductance (1) ALL 8.0 12,0 24 $(U) | Vgg=10V Ip=7.75A Cisg Input Capacitance ALL 1000* | 2000 3000* pF , - Vas = 0. Vpg = 25V, f = 1.0 MHz Coss Output Capacitance ALL 200 400 600 pF See Fig. 10 See Fig. C,.. Reverse Transfer Capacitance ALL 50 100 200 pF td (on) Turn-On Delay Time ALL - - 35 ng Vop = 210V, Ip = 7.75A, 2, = 4.72 ty Rise Time ALL - - 50 ns (See Figs. 13 and 14) tg (off) Turn-Off Delay Time ALL - - 150 ns (MOSFET switching times are essentially tf Fall Time ALL - = 70* ns independent of operating temperature.) Thermal Resistance Rinse Junction-to-Case ALL - - 0.83* | o/;w Rincs _Case-to-Sink ALL > 0.1 - C/W | Mounting surface flat, smooth, and greased. Ringa _ Junction-to-Ambient ALL _ 30 C/W Free Air Operation Body-Drain Diode Ratings and Characteristics Is Continuous Source Current 21N6769 = = 11 A Modified MOSFET symbol Dd (Body Diode} N6770 = _ 12 showing the integral : reverse P-N junction rectifier. Iona Pulsed Source Current 2N6769 _ _ 20 A G (Body Diode) 2N6770 - = 25 s Vsp Diode Forward Voltage (7) 2N6769 | 0.75 - 15 v Te = 28C, ig = 11A, Vgg = 0 2N6770 0.80* ~ 1.6* v To = 26C, Ig = 12A, Vag = 0 ter Reverse Recovery Time ALL - 1300 - ns Ty = 150C, Ip = Igy. dig /dt = 100 A/us Qar Reverse Recovered Charge ALL - 74 uc Ty = 150C, ig = Iggy, dig/dt = 100 A/us *JEDEC registered values. VARY tp TO OBTAIN REQUIRED PEAK 1, Vgg = 10V boty Fig. 1 - Clamped inductive test circuit. Pulse Test: Pulse Width & 300 usec, Duty Cycle < 2% ty [| a \ Ne, \.--- Fig. 2 - Clamped inductive waveforms. 3-501Standard Power MOSFETs 2N6769, 2N6770 20 2 Vps = 18V Tyr 78% 1 ' Ty 1250 00 us PULSE TEST 3 is : g 5 3 . 2 2 = = 10 So 4 = 3 z g 2 S, $5 0 so 100 150 200 750 300 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Q yo? 3 4 6 F 8 Vs. GATE-T0-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical output characteristics for both types. Fig. 4 - Typical transter characteristics for both types. 10 10 PULSE TEST 8 8 8 a z z 6 Zz 6 5 5 z = 3 8 2 4 z 4 5 3 s Ss 2 2 3.5V 0 1 2 3 4 5 Q 1 2 3 4 5 Vos. ORAIN-TO.SOUACE VOLTAGE iVOLTS) Vos. ORAIN-TO-SOURGE VOLTAGE (VOLTS) Fig. 5 - Typical saturation characteristics for the 2N6769. Fig. 6. - Typical saturation characteristics for the 2N6770. 100 50 20 Z g z & 10 2 2 Z = 5.0 < = S a 2 s : a 20 a =z 8 z = B10 = s z Vos + 15V T= 0 TEST SINGLE PULSE o 5 0 1s 20 3s So 310 20 50 100 200 500 tp, DRAIN CURRENT {AMPERES} Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 7 - Typical transconductance versus drain current Fig. 8 - Maximum safe operating area for both types. for both types. 3-502Standard Power MOSFETs 2N6769, 2N6770 4000 Ves*0 i] fs. 8 3200 1 MHz < 2 a =< = < Zs = 2000 oy 2 zs < aa - 32 s o $s < z= = 1600 = o ec a z 2 Ves = t0V 600 i} = Ip = 7.75A 40 0 40 80 120 160 0 10 20 ww 40 50 Ty, JUNCTION TEMPERATURE (C) Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 9 - Typical normalized on-resistance versus temp- Fig. 10 - Typical capacitance versus drain-to-source erature for both types. voltage for both types. bguq, 2NG770 2 E 2 0 ts, 2N6770 = = z = s e < & < = 3 = 5 Z 3 4 Ty = 150C Ty= 25C = : 3 8 Py 2 1 a 2 40st 8 ' 2 Te, CASE TEMPERATURE (C) Vgq. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 11 - Power versus temperature erating curve Fig. 12 - Typical body-drain diode forward voltage for both types. for both types. a 230v PULSE WIDTH Yop = vi GS {on} 30% o0% 272 INPUT, Vj 50% PRE = 1 kHz . Vv, 10% 10% Vi 8 VGs (off) INPUT PULSE INPUT PULSE TO SCOPE ~ RISE TIME ~ FALL TIME 'd (on) > = tg (oft) > E ~ & ty v a DS (off} 70% ] "0% QUTPUT, Vo 90% 90% VDS ton} LL ton }ae off Fig. 13 - Switching time test circuit. Fig. 14 - Switching time waveforms 3-503High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65