STPRF1605CTSTPRF1660CT VISHAY Vishay Lite-On Power Semiconductor 16A SuperFast Glass Passivated Rectifiers Features Glass passivated die construction Diffused junction Super-fast switching for high efficiency High current capability and low forward voltage drop Surge overload rating to 200A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings 95 9630 Tj = 25C Repetitive peak reverse voltage STPRF1605CT | Varn 50 Vv =Working peak reverse voltage STPRF1610CT | =Vrawm 100 Vv =DC Blocking voltage STPRF1615CT =VR 150 V STPRF1620CT 200 Vv STPRF1630CT 300 Vv STPRF1640CT 400 Vv STPRF1650CT 500 Vv STPRF1660CT 600 Vv Peak forward surge current lesm 200 A Average forward current Tce=100C IEAy 16 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics T, = 25C junction to case Forward voltage Ir=8A STPRF1605CT1620CT Ve 0.95| V STPRF1630CT1640CT Ve 13 |) V STPRF1650CT1660CT Ve 15) V Reverse current Tce=25C IR 5 vA Te=1 00C IR 500 vA Reverse recovery time | lF=1A, IR=0.5A, STPRF1605CT1620CT tr 35 | ns r=0.25A STPRF1630CT1660CT ter 50 | ns Diode capacitance VR=4V, f=1MHz STPRF1605CT1640CT Cp 85 pF STPRF1650CT1660CT Cp 60 pF Thermal resistance Rthuc 3.4 KAW Rev. A2, 24-Jun-98STPRF1605CTSTPRF1660CT Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) 20 < o 16 5 oO v N 5 12 : \ c \ 2 8 S \ Z \ < 4 \ > it 0 0 50 100 150 15453 Tamb Ambient Temperature (C ) Figure 1. Max. Average Forward Current vs. Ambient Temperature Pulse Width = 300 ps 2% Duty Cycle 50V-200V 500V-600V |- Forward Current (A) 0.2 0.6 1.0 14 15454 Ve Forward Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage x 300 8.3 ms Single Half-Sine-Wave yy JEDEC method 250 5 oO o 200 2 =) n p 150 Oy g Pee \] 3S ir 100 =a x 4 icf c 50 = i _ 0 1 10 100 15455 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 400 Tj= 25C > f=1MHz a 8 1605 1640 Cc 100 Oo oO a oO Oo oO To a 1650 1660 a oO 10 0.1 1.0 10 100 15456 Vr Reverse Voltage ( V ) Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 100 4 ~ 10 e o 5 oO 1.0 9 > oc I cc 0.1 Tj = 25C 0.01 0 40 80 120 15457 Percent of Rated Peak Reverse Voltage (%) Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98. STPRF1605CTSTPRF1660CT VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L M B TO-220AB Dim Min Max ee A] 14.22 (5.88 aan B 9.65 10.67 ( 254 3.43 2 D Bh 6.86 E - 6.25 be G | 12.70 14.73 . H 2.29 2.79 | J 0.51 114 Lu kK] 03.53 04.09 WD L 3.56 483 M 114 1.40 N 0.30 0.64 P 7.03 2.92 Al Dimensions in mm N J oll P H | + technical drawings according to DIN specifications 14468 Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)STPRF1605CTSTPRF1660CT Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98