MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation (Note 1) PD 1.65 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 76 °C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
ICBO V
CB=40V 100 nA
IEBO V
EB=6.0V 100 nA
BVCBO I
C=100μA 40 V
BVCEO I
C=10mA 25 V
BVEBO IE=100μA 6.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 25 30 50 mV
VCE(SAT) I
C=100mA, IB=10mA 40 50 75 mV
MARKING CODES:
CTLM3410-M832D: CFG
CTLM7410-M832D: CFH
CTLM3474-M832D: CFJ
APPLICATIONS
• Switching Circuits
• DC - DC Converters
• LCD Backlighting
• Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
FEATURES
• Dual Chip Device
• High Current (1.0A) Transistors
• Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)
• High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Devices
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2.
CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE (SAT)
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM3410-M832D
(Dual NPN), CTLM7410-M832D (Dual PNP), and
CTLM3474-M832D (Complementary NPN & PNP) are
Low VCE(SAT) Transistors packaged in the small,
thermally efficient, 3x2mm Tiny Leadless Module
(TLM™) surface mount case. These devices are
designed for applications where small size, operational
efficiency, and low energy consumption are the prime
requirements. Due to its leadless package design this
device is capable of dissipating up to 4 times the power
of similar devices in comparable sized surface mount
packages.
TLM832D CASE
www.centralsemi.com
R3 (1-August 2011)