FPD1500 - RF Micro Devices, Inc. (RFMD)

Features

1 of 4

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

FPD1500

1W POWER pHEMT

The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-

tor (pHEMT), featuring a 0.25μmx1500μm Schottky barrier gate, defined by high -

resolution stepper-based photolithography. The recessed gate structure minimizes

parasitics to optimize performance. The epitaxial structure and processing have

been optimized for reliable high-power applications. The FPD1500 is also available

in the low-cost plastic SOT89 and DFN packages.

29dBm Linear Output Power

at 12GHz

9dB Power Gain at 12GHz

12.5dB Max Stable Gain at

12GHz

41 dBm OIP3

35% Power-Added Efficiency

Applications

Narrowband and Broadband

High-Performance Amplifiers

SATCOM Uplink Transmitters

PCS/Cellular Low-Voltage

High-Efficiency Output Ampli-

fiers

Medium-Haul Digital Radio

Transmitters

Rev A1 DS090612

Package Style: Bare Die

FPD15001W

Power pH EMT

Parameter Specification Unit Condition

Min. Typ. Max.

Power at P1dB Gain Compression 28.5 30.0 dBm VDS=8V, IDS=50% IDSS

Maximum Stable Gain (S21/S12) 11.5 12.5 dB VDS=8V, IDS=50% IDSS

Power Gain at P1dB 8.0 9.0 dB VDS=8V, IDS=50% IDSS

PAE 45 % VDS=8V, IDS =50% IDSS, POUT=P1dB

OIP3 from 15dB to 5dB below P1dB 41 dBm VDS=8V, IDS=50% IDSS

43 dBm Matched for optimal power, tuned for best IP3

Saturated Drain-Source Current (IDSS) 375 465 550 mA VDS=1.3V, VGS=0V

Maximum Drain-Source Current

(IMAX)750 mA VDS=1.3V, VGS≈+1V

Transconductance 400 ms VDS =1.3V, VGS=0 V

Gate-Source Leakage Current (IGSO)115μAV

GS=-5V

Pinch-Off Voltage (VP) |0.7| |1.0| |1.3| V VDS=1.3V, IDS =1.5mA

Gate-Source Breakdown Voltage

(VBDGS)|12.0| |14.0| V IGS=1.5mA

Gate-Drain Breakdown Voltage

(VBDGD)|14.5| |16.0| V IGD =1.5mA

Thermal Resistivity (θJC) * 42 °C/W VDS>6V

Note: TAMBIENT=22°C, RF specifications measured at f=12GHz using CW signal.

2 of 4 Rev A1 DS090612

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

FPD1500

Pad Layout

Note: Coordinates are referenced from the bottom left hand

corner of the die to the center of the bond pad opening.

Absolute Maximum Ratings1

Parameter Rating Unit

Drain-Source Voltage (VDS)

(-3V<VGS<-0.5V)2

10 V

Gate-Source Voltage (VGS)

(0V<VDS <+8V)

-3 V

Drain-Source Current (IDS)

(For VDS<2V)

IDSS

Gate Current

(Forward or reverse current) 15 mA

RF Input Power (PIN)

(Under any acceptable bias state)

25 dBm

Channel Operating Temperature (TCH)

(Under any acceptable bias state)

175 °C

Storage Temperature (TSTG)

(Non-Operating Storage)

-65 to 150 °C

Total Power Dissipation (PTOT)3, 4, 5 3.6 W

Simultaneous Combination of Limits6

(2 or more max. limits)

80 %

Notes:

1TAMBIENT =22°C unless otherwise noted; exceeding any one of these absolute max-

imum ratings may cause permanent damage to the device.

2Operating at absolute maximum VD continuously is not recommended. If operation

at 10V is considered then IDS must be reduced in order to keep the part within

its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V.

3Total Power Dissipation to be de-rated as follows above 22°C: PTOT =3.6-

(0.024W/°C)xTHS, where THS =heatsink or ambient temperature above 22°C.

Example: For a 85°C carrier temperature: PTOT =3.6-(0.024x(85-22))=2.09W

4Total Power Dissipation (PTOT) defined as (PDC+PIN)–POUT, where PDC: DC Bias

Power, PIN: RF Input Power, POUT: RF Output Power.

5Users should avoid exceeding 80% of 2 or more Limits simultaneously.

6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Au-

plated copper heatsink or rib.

Pad Description Pin Coordinates (μm)

A1 Gate Pad 130, 330

A2 Gate Pad 130, 190

B1 Drain Pad 390, 330

B2 Drain Pad 390, 190

CSource Pad

Die Size (μm) Die Thickness (μm) Min. Bond Pad Opening (μmxμm)

470 x 530 75 64 x 77

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

3 of 4Rev A1 DS090612

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

FPD1500

Preferred Assembly Instructions

GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible.

The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be

applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally

it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense

Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for one hour in an oven

especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au

20% Sn) eutectic die attach has a melting point of approximately 280°C but the absolute temperature being used depends on

the leadframe material used and the particular application. The maximum time at used should be kept to a minimum.

This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter

gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter

wire. Bond force, time stage temperature and ultrasonics are all critical parameters and the settings are dependent on the

setup being used and application. Ultrasonic or thermosonic bonding is not recommended.

Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires

should be minimized especially when making RF or ground connections.

Handling Precautions

To avoid damage to the devices, care should be exercised during handling. Proper Electro-

static Discharge (ESD) precautions should be observed at all stages of storage, handling,

assembly, and testing.

ESD/MSL Rating

These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22-

A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged

part and therefore no MSL rating applies.

Application Notes and Design Data

Application Notes and design data including S-parameters, noise paramters, and device model are available on request from

www.rfmd.com.

Reliability

An MTTF of 4.2 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device.

Disclaimers

This product is not designed for use in any space-based or life-sustaining/supporting equipment.

Ordering Information

Delivery Quantity Ordering Code

Full Pack (100) FPD1500-000

Small Quantity (25) FPD1500-000SQ

Sample Quantity (3) FPD1500-000S3

4 of 4 Rev A1 DS090612

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

FPD1500